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公开(公告)号:US20210273095A1
公开(公告)日:2021-09-02
申请号:US16877516
申请日:2020-05-19
Inventor: Ming QIAO , Longfei LIANG , Yilei LYU , Zhao QI , Bo Zhang
Abstract: A low specific on-resistance (Ron,sp) power semiconductor device includes a power device and a transient voltage suppressor (TVS); wherein the power device comprises a gate electrode, a drain electrode, a bulk electrode, a source electrode and a parasitic body diode, the bulk electrode and the source electrode are shorted, the TVS comprises an anode electrode and a cathode electrode, the drain electrode of the power device and the anode electrode of the TVS are connected by a first metal to form a high-voltage terminal electrode, the source electrode of the power device and the cathode electrode of the TVS are connected by a second metal to form a low-voltage terminal electrode.