公开(公告)号：US20210273095A1

公开(公告)日：2021-09-02

申请号：US16877516

申请日：2020-05-19

Applicant: University of Electronic Science and Technology of China

Inventor： Ming QIAO ,  Longfei LIANG ,  Yilei LYU ,  Zhao QI ,  Bo Zhang

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/04

Abstract: A low specific on-resistance (Ron,sp) power semiconductor device includes a power device and a transient voltage suppressor (TVS); wherein the power device comprises a gate electrode, a drain electrode, a bulk electrode, a source electrode and a parasitic body diode, the bulk electrode and the source electrode are shorted, the TVS comprises an anode electrode and a cathode electrode, the drain electrode of the power device and the anode electrode of the TVS are connected by a first metal to form a high-voltage terminal electrode, the source electrode of the power device and the cathode electrode of the TVS are connected by a second metal to form a low-voltage terminal electrode.

公开(公告)号：US20190304966A1

公开(公告)日：2019-10-03

申请号：US16017978

申请日：2018-06-25

Applicant: University of Electronic Science and Technology of China

Inventor： Ming QIAO ,  Zhao QI ,  Jiamu XIAO ,  Longfei LIANG ,  Danye LIANG ,  Bo ZHANG

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/08

Abstract: The present invention provides a high voltage ESD protection device including a P-type substrate; a first NWELL region located on the left of the upper part of the P-type substrate; an NP contact region located on the upper part of the first NWELL region; an N+ contact region located on the right of the upper part of the P-type substrate apart from the first NWELL region; a P+ contact region tangential to the right side of the N+ contact region; a NTOP layer arranged on the right of the NP contact region inside the first NWELL region. The NP contact region is connected to a metal piece to form a metal anode. The N+ contact region and the P+ contact region are connected by a metal piece to form a metal cathode.

公开(公告)号：US20190237576A1

公开(公告)日：2019-08-01

申请号：US15955706

申请日：2018-04-18

Applicant: University of Electronic Science and Technology of China

Inventor： Ming QIAO ,  Zhengkang WANG ,  Ruidi WANG ,  Zhao QI ,  Bo ZHANG

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/40 ,  H01L29/08

CPC classification number: H01L29/7813 ,  H01L29/063 ,  H01L29/0649 ,  H01L29/0852 ,  H01L29/402 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/7825 ,  H01L29/7833

Abstract: A power semiconductor device including a first conductivity type semiconductor substrate, a drain metal electrode, a first conductivity type semiconductor drift region, and a second conductivity type semiconductor body region. The second conductivity type semiconductor body region includes a first conductivity type semiconductor source region and anti-punch-through structure; the anti-punch-through structure is a second conductivity type semiconductor body contact region or metal structure; the lower surface of the anti-punch-through structure coincides with the upper surface of the first conductivity type semiconductor drift region or the distance between the two is less than 0.5 μm, so that make the device avoid from punch-through. An anti-punch-through structure is introduced at the source end of the device to avoid punch-through breakdown caused by short channel and light-doped body region.