SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF
    1.
    发明申请
    SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD THEREOF 审中-公开
    基板加工装置及其半导体制造方法

    公开(公告)号:US20090050056A1

    公开(公告)日:2009-02-26

    申请号:US12057019

    申请日:2008-03-27

    IPC分类号: H01L21/30

    摘要: A substrate processing apparatus and a substrate manufacturing method using the substrate processing apparatus which manufactures, with a high production efficiency, a semiconductor having superior electric characteristics in the nitridation process of a gate insulating film are disclosed. The substrate processing apparatus for the substrate manufacturing method includes a processing chamber which processes the substrate, a processing chamber which generates the plasma, a heating unit which heats the substrate, a gas supply source, and a control unit which executes a first process which converts a nitrogen-containing gas supplied to the processing chamber into the plasma by the processing chamber and heats the substrate by the heating unit, and a second process which stops the plasma generation and heating the substrate further at the temperature of not lower than 450° C. by the heating unit.

    摘要翻译: 公开了一种使用基板处理装置的基板处理装置和基板制造方法,该基板处理装置以高生产率生产在栅绝缘膜的氮化处理中具有优异电特性的半导体。 用于基板制造方法的基板处理装置包括:处理基板的处理室,产生等离子体的处理室;加热基板的加热单元;气体供给源;以及控制单元,其执行将第 通过处理室向处理室供给到等离子体中的含氮气体,并通过加热单元加热基板;以及第二过程,其在不低于450℃的温度下进一步停止等离子体产生和加热基板 由加热单元。

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
    2.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
    制造半导体器件和衬底加工设备的方法

    公开(公告)号:US20120071002A1

    公开(公告)日:2012-03-22

    申请号:US13232587

    申请日:2011-09-14

    申请人: Masanori NAKAYAMA

    发明人: Masanori NAKAYAMA

    IPC分类号: H01L21/31

    摘要: A process of manufacturing a semiconductor device may be simplified, and oxidation of a metal element-containing film may be suppressed. The method of manufacturing a semiconductor device includes loading a substrate including a metal element-containing film and an insulating film formed on the metal element-containing film into a process chamber and supporting the substrate using a substrate support installed in the process chamber; supplying a reactive gas including at least one of hydrogen in excited state and nitrogen in excited state, and oxygen in excited state onto the substrate in the process chamber and processing the substrate; and unloading the substrate from an inside of the process chamber.

    摘要翻译: 可以简化制造半导体器件的工艺,并且可以抑制含金属元素的膜的氧化。 制造半导体器件的方法包括将包含含金属元素的膜和形成在含金属元素的膜上的绝缘膜的衬底加载到处理室中,并使用安装在处理室中的衬底支撑体来支撑衬底; 将处于激活状态的氢中的至少一种和激发态的氮中的至少一种的活性气体和处于激活状态的氧供给到所述处理室内的所述基板上,对所述基板进行处理; 以及从所述处理室的内部卸载所述基板。