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    NITRIDATION OF ATOMIC LAYER DEPOSITED HIGH-K DIELECTRICS USING TRISILYLAMINE
    7.
    发明申请
    NITRIDATION OF ATOMIC LAYER DEPOSITED HIGH-K DIELECTRICS USING TRISILYLAMINE 有权
    原子层沉积使用三硝基胺的高K电介质

    公开(公告)号：US20140017907A1

    公开(公告)日：2014-01-16

    申请号：US13941429

    申请日：2013-07-12

    申请人： Air Liquide America Corporation ,  Tokyo Electron Limited

    发明人： Steven P. Consiglio ,  Robert D. Clark ,  Christian Dussarrat ,  Vincent Omarjee ,  Venkat Pallem ,  Glenn Kuchenbeiser

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02181 ,  C23C16/308 ,  C23C16/45531 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02161 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/02326 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/28194 ,  H01L29/518

    摘要： A method is provided for forming a nitrided high-k film in an atomic layer deposition process (ALD) process. The method includes receiving a substrate in a process chamber, maintaining the substrate at a temperature sufficient for ALD of a nitrided high-k film, and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a gas pulse comprising a metal-containing precursor, b) exposing the substrate to a gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a gas pulse comprising trisilylamine gas, where the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that includes nitrogen and that is substantially free of silicon, and repeating the gas pulse sequence. A trisilylamine gas exposure may also be used to nitride a deposited high-k film.

    摘要翻译： 提供了一种在原子层沉积工艺（ALD）工艺中形成氮化高k膜的方法。 该方法包括在处理室中接收衬底，将衬底保持在对氮化的高k膜的ALD足够的温度，以及通过将衬底暴露于气体脉冲序列而将氮化的高k膜沉积在衬底上，该气体脉冲序列包括 ，以任何顺序：a）将衬底暴露于包含含金属前体的气体脉冲，b）将衬底暴露于包含含氧气体的气体脉冲，以及c）将衬底暴露于包含三甲胺气体 其中将衬底暴露于三乙胺气体产生包含氮并且基本上不含硅的氮化高k膜，并重复气体脉冲序列。 三甲胺气体暴露也可​​用于氮化沉积的高k膜。

    Methods Of Forming Material Over A Substrate And Methods Of Forming Capacitors
    8.
    发明申请
    Methods Of Forming Material Over A Substrate And Methods Of Forming Capacitors 有权
    在基板上形成材料的方法和形成电容器的方法

    公开(公告)号：US20130280426A1

    公开(公告)日：2013-10-24

    申请号：US13926289

    申请日：2013-06-25

    申请人： Micron Technology, Inc.

    发明人： Zhe Song ,  Chris M. Carlson

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45553 ,  C23C16/405 ,  C23C16/45527 ,  H01G4/085 ,  H01G4/12 ,  H01G4/33 ,  H01L21/02159 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L28/40

    摘要： A method of forming a material over a substrate includes performing at least one iteration of the following temporally separated ALD-type sequence. First, an outermost surface of a substrate is contacted with a first precursor to chemisorb a first species onto the outermost surface from the first precursor. Second, the outermost surface is contacted with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor. The first and second precursors include ligands and different central atoms. At least one of the first and second precursors includes at least two different composition ligands. The two different composition ligands are polyatomic or a lone halogen. Third, the chemisorbed first species and the chemisorbed second species are contacted with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.

    摘要翻译： 在衬底上形成材料的方法包括进行以下时间上分离的ALD型序列的至少一次迭代。 首先，将基底的最外表面与第一前体接触，以将第一种类化学吸附到来自第一前体的最外表面上。 第二，最外面的表面与第二前体接触，以将与第一种不同的第二物种化学吸附到与第二前体的最外表面上。 第一和第二前体包括配体和不同的中心原子。 第一和第二前体中的至少一种前体包括至少两种不同的组成配体。 两种不同的组成配体是多原子或单卤素。 第三，化学吸附的第一物质和化学吸附的第二物质与反应物接触，所述反应物与第一物质和第二物质反应以形成反应产物基底的新的最外表面。