公开(公告)号：US20090050056A1

公开(公告)日：2009-02-26

申请号：US12057019

申请日：2008-03-27

申请人： Unryu OGAWA ,  Katsuhiko YAMAMOTO ,  Masanori NAKAYAMA

发明人： Unryu OGAWA ,  Katsuhiko YAMAMOTO ,  Masanori NAKAYAMA

IPC分类号： H01L21/30

CPC分类号： H01J37/32091 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/3115 ,  H01L21/3144 ,  H01L21/67115

摘要： A substrate processing apparatus and a substrate manufacturing method using the substrate processing apparatus which manufactures, with a high production efficiency, a semiconductor having superior electric characteristics in the nitridation process of a gate insulating film are disclosed. The substrate processing apparatus for the substrate manufacturing method includes a processing chamber which processes the substrate, a processing chamber which generates the plasma, a heating unit which heats the substrate, a gas supply source, and a control unit which executes a first process which converts a nitrogen-containing gas supplied to the processing chamber into the plasma by the processing chamber and heats the substrate by the heating unit, and a second process which stops the plasma generation and heating the substrate further at the temperature of not lower than 450° C. by the heating unit.

摘要翻译： 公开了一种使用基板处理装置的基板处理装置和基板制造方法，该基板处理装置以高生产率生产在栅绝缘膜的氮化处理中具有优异电特性的半导体。 用于基板制造方法的基板处理装置包括：处理基板的处理室，产生等离子体的处理室;加热基板的加热单元;气体供给源;以及控制单元，其执行将第 通过处理室向处理室供给到等离子体中的含氮气体，并通过加热单元加热基板;以及第二过程，其在不低于450℃的温度下进一步停止等离子体产生和加热基板 由加热单元。

公开(公告)号：US20120256816A1

公开(公告)日：2012-10-11

申请号：US13487771

申请日：2012-06-04

申请人： Yoshikazu YOKOTA ,  Kunihiko TANI ,  Gorou SAKAMAKI ,  Katsuhiko YAMAMOTO ,  Takashi YONEOKA ,  Kazuhisa HIGUCHI ,  Kimihiko SUGIYAMA

发明人： Yoshikazu YOKOTA ,  Kunihiko TANI ,  Gorou SAKAMAKI ,  Katsuhiko YAMAMOTO ,  Takashi YONEOKA ,  Kazuhisa HIGUCHI ,  Kimihiko SUGIYAMA

IPC分类号： G09G3/36

CPC分类号： G09G3/36 ,  G09G3/2096 ,  G09G3/3611 ,  G09G3/3622 ,  G09G3/3644 ,  G09G3/3674 ,  G09G3/3681 ,  G09G3/3696 ,  G09G5/22 ,  G09G5/222 ,  G09G2300/0426 ,  G09G2310/0213 ,  G09G2310/0232 ,  G09G2310/0278 ,  G09G2310/04 ,  G09G2320/066 ,  G09G2320/08 ,  G09G2330/02 ,  G09G2330/021 ,  G09G2330/022 ,  G09G2330/023 ,  G09G2340/0414 ,  G09G2340/0485

摘要： In conventional liquid crystal display controllers, the display is reduced in the stand-by state but the liquid crystal display duty is not changed, i.e., even the common electrodes of the rows that are not producing display are scanned, and the consumption of electric power is not decreased to a sufficient degree in the stand-by state. A liquid crystal display controller includes a drive duty selection register capable of being rewritten by a microprocessor, and a drive bias selection register. When the display is changed from the whole display on a liquid crystal display panel to a partial display on part of the rows only, the preset values of the drive duty selection register and of the drive bias selection register are changed, so that the display is selectively produced on a portion of the liquid crystal display panel at a low voltage with a low-duty drive.

摘要翻译： 在传统的液晶显示控制器中，显示器在待机状态下被降低，但是液晶显示器的占空比不改变，即使扫描不产生显示器的行的公共电极，并且电力的消耗 在待机状态下没有降低到足够的程度。 液晶显示控制器包括能够由微处理器重写的驱动占空比选择寄存器和驱动偏置选择寄存器。 当显示器从液晶显示面板上的整个显示器改变到仅部分行上的部分显示时，驱动占空比选择寄存器和驱动偏置选择寄存器的预设值被改变，使得显示器 在低负载驱动下以低电压选择性地在液晶显示面板的一部分上产生。

公开(公告)号：US20100123183A1

公开(公告)日：2010-05-20

申请号：US12622816

申请日：2009-11-20

申请人： Katsuhiko YAMAMOTO ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

发明人： Katsuhiko YAMAMOTO ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L21/28282 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7885

摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

摘要翻译： 提供了一种能够提高非易失性存储器的记忆保持特性的技术。 特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性 非易失性存储器的保留特性。 在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成 在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。

公开(公告)号：US20120312235A1

公开(公告)日：2012-12-13

申请号：US13591453

申请日：2012-08-22

申请人： Katsuhiko YAMAMOTO

发明人： Katsuhiko YAMAMOTO

IPC分类号： C23C16/30

CPC分类号： C23C16/45523 ,  C23C16/04 ,  C23C16/24 ,  C30B25/14 ,  C30B29/06

摘要： The manufacturing method of a semiconductor apparatus has a step for carrying in the substrate into the processing chamber; a step for heating the processing chamber and the substrate to the predetermined temperature; and a gas supply and exhaust step for supplying and exhausting desired gas into and from the processing chamber, wherein the gas supply and exhaust step repeats by the predetermined times a first supply step for supplying silicon-type gas and hydrogen gas into the processing chamber; a first exhaust step for exhausting at least said silicon-type gas from the processing chamber; a second supply step for supplying chlorine gas and hydrogen gas into the processing chamber; and a second exhaust step for exhausting at least the chlorine gas from the processing chamber.

摘要翻译： 半导体装置的制造方法具有将基板搬入处理室的步骤; 将处理室和基板加热至规定温度的工序; 以及用于向所述处理室供应和排出所需气体的气体供给和排出步骤，其中所述气体供给和排出步骤重复所述预定时间用于将硅型气体和氢气供应到所述处理室中的第一供给步骤; 用于从所述处理室排出至少所述硅型气体的第一排气步骤; 用于将氯气和氢气供给到所述处理室中的第二供给步骤; 以及用于至少排出来自处理室的氯气的第二排气步骤。

公开(公告)号：US20080245303A1

公开(公告)日：2008-10-09

申请号：US12060511

申请日：2008-04-01

申请人： Katsuhiko YAMAMOTO

发明人： Katsuhiko YAMAMOTO

IPC分类号： C23C16/00

CPC分类号： C23C16/45523 ,  C23C16/04 ,  C23C16/24 ,  C30B25/14 ,  C30B29/06

摘要： The manufacturing method of a semiconductor apparatus has a step for carrying in the substrate into the processing chamber; a step for heating the processing chamber and the substrate to the predetermined temperature; and a gas supply and exhaust step for supplying and exhausting desired gas into and from the processing chamber, wherein the gas supply and exhaust step repeats by the predetermined times a first supply step for supplying silicon-type gas and hydrogen gas into the processing chamber; a first exhaust step for exhausting at least said silicon-type gas from the processing chamber; a second supply step for supplying chlorine gas and hydrogen gas into the processing chamber; and a second exhaust step for exhausting at least the chlorine gas from the processing chamber.

摘要翻译： 半导体装置的制造方法具有将基板搬入处理室的步骤; 将处理室和基板加热至规定温度的工序; 以及用于向所述处理室供应和排出所需气体的气体供给和排出步骤，其中所述气体供给和排出步骤重复所述预定时间用于将硅型气体和氢气供应到所述处理室中的第一供给步骤; 用于从所述处理室排出至少所述硅型气体的第一排气步骤; 用于将氯气和氢气供给到所述处理室中的第二供给步骤; 以及用于至少排出来自处理室的氯气的第二排气步骤。