CRYSTAL OF FUSED HETEROCYCLIC COMPOUND
    2.
    发明申请
    CRYSTAL OF FUSED HETEROCYCLIC COMPOUND 有权
    熔融杂环化合物的晶体

    公开(公告)号:US20140113932A1

    公开(公告)日:2014-04-24

    申请号:US14125390

    申请日:2012-06-21

    IPC分类号: C07D471/04

    CPC分类号: C07D471/04

    摘要: The present invention relates to a crystal of 1-ethyl-7-methyl-3-{4-[(3-methyl-3H-imidazo[4,5-b]pyridin-2-yl)oxy]phenyl}-1,3-dihydro-2H-imidazo[4,5-b]pyridin-2-one useful as a prophylactic or therapeutic agent for schizophrenia and the like, which shows an X-ray powder diffraction pattern having characteristic peaks at interplaner spacings (d) of 13.59 plus or minus 0.2 and 6.76 plus or minus 0.2 Angstroms in powder X-ray diffraction.

    摘要翻译: 本发明涉及1-乙基-7-甲基-3- {4 - [(3-甲基-3H-咪唑并[4,5-b]吡啶-2-基)氧基]苯基} 可用作精神分裂症等的预防或治疗剂的3-二氢-2H-咪唑并[4,5-b]吡啶-2-酮,其显示具有在间隔间间隔处具有特征峰的X射线粉末衍射图(d) 在粉末X射线衍射中为13.59加或减0.2和6.76加或减0.2埃。

    Substrate treatment device
    5.
    发明申请
    Substrate treatment device 审中-公开
    底物处理装置

    公开(公告)号:US20080135516A1

    公开(公告)日:2008-06-12

    申请号:US11979816

    申请日:2007-11-08

    IPC分类号: B44C1/22 C23C16/00

    摘要: It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.

    摘要翻译: 旨在提供能够在选择性外延生长中调节生长速度和蚀刻速度两者的基板处理装置,从而避免从喷嘴产生颗粒,并获得良好的蚀刻特性。 一种基板处理装置,其通过向处理室交替地供给含有硅和蚀刻气体的原料气体来选择性地在基板的表面上生长外延膜,所述基板处理装置设置有用于将基板支撑于基板的基板支撑部件 所述处理室,设置在所述处理室的外部用于加热所述基板的加热部件和所述处理室的气氛,设置在所述处理室内部的气体供给系统和在所述处理室上开放的排出口,所述气体供给系统包括: 用于供给原料气体的第一气体供给喷嘴和用于供给蚀刻气体的第二气体供给喷嘴。

    Camera and focussing method for the same
    9.
    发明授权
    Camera and focussing method for the same 失效
    相机和聚焦方法相同

    公开(公告)号:US6061525A

    公开(公告)日:2000-05-09

    申请号:US992579

    申请日:1997-12-17

    CPC分类号: G03B1/50 G03B19/04

    摘要: A Brownie camera is loadable with a 120- and 220-type roll photo film. The 120 type includes light-shielding backing paper overlaid on the entirety of the photo filmstrip, unlike the 220 type. An exposure aperture is formed in a camera body, and disposed between a photo film supply chamber and a photo film take-up chamber, for exposing the roll photo film. A pair of rails are disposed along respective two edges of the exposure aperture extending horizontally, and contact sides of an emulsion surface of the roll photo film. A pressure plate contacts a back of the roll photo film to position the roll photo film on a rear of the exposure aperture, and is disposed behind the exposure aperture to define a photo film passageway between the pressure plate and the rails. An external selector wheel is disposed outside the camera body, for selecting one of the 120 and 220 types. A mechanism for moving the pressure plate is actuated by a shift of the selector wheel, for moving the pressure plate toward or away from the rails. The passageway is set at a wide space size when the 120 type is selected, and at a narrower space size when the 220 type is selected.

    摘要翻译: 一个布朗尼相机可以用120和220型卷筒胶卷装载。 120种类型包括覆盖在整个照片胶卷上的遮光背衬纸,与220类型不同。 曝光孔形成在照相机主体中,并且设置在照相胶卷供应室和照相胶片卷取室之间,用于曝光卷相片。 一对轨道沿着水平延伸的曝光孔的相应两个边缘设置,并且与辊式胶片的乳剂表面的接触侧布置。 压板接触辊式胶片胶片的背面以将胶卷照相胶片定位在曝光孔的后部,并且设置在曝光孔的后面,以在压板和导轨之间限定照相胶片通道。 外部选择轮设置在照相机主体外部,用于选择120和220种之一。 用于移动压板的机构通过选档轮的移动来致动,用于将压板朝向或远离轨道移动。 当选择120型时,通道设置在宽的空间尺寸,当选择220型时,通道的空间尺寸较窄。