公开(公告)号：US20140147945A1

公开(公告)日：2014-05-29

申请号：US14171339

申请日：2014-02-03

Applicant: VOLEX PLC ,  APPLIED MICRO CIRCUITS CORPORATION

Inventor： Subhash Roy ,  Igor Zhovnirovsky ,  Sergey Vinogradov

IPC: H01L31/02 ,  H01L21/66

CPC classification number: G01J1/44 ,  H01L22/14 ,  H01L27/1446 ,  H01L31/00 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/108 ,  H01L31/1085 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: A photodetector with a bandwidth-tuned cell structure is provided. The photodetector is fabricated from a semiconductor substrate that is heavily doped with a first dopant. A plurality of adjoining cavities is formed in the semiconductor substrate having shared cell walls. A semiconductor well is formed in each cavity, moderately doped with a second dopant opposite in polarity to the first dopant. A layer of oxide is grown overlying the semiconductor wells and an annealing process is performed. Then, metal pillars are formed that extend into each semiconductor well having a central axis aligned with an optical path. A first electrode is connected to the metal pillar of each cell, and a second electrode connected to the semiconductor substrate. The capacitance between the first and second electrodes decreases in response to forming an increased number of semiconductor wells with a reduced diameter, and forming metal pillars with a reduced diameter.

Abstract translation: 提供具有带宽调谐单元结构的光电检测器。 光电检测器由重掺杂第一掺杂剂的半导体衬底制成。 在具有共享单元壁的半导体衬底中形成多个邻接的空腔。 在每个空腔中形成半导体阱，中等掺杂有与第一掺杂剂极性相反的第二掺杂剂。 生长覆盖在半导体阱上的一层氧化物，并进行退火处理。 然后，形成延伸到具有与光路对准的中心轴的每个半导体阱中的金属柱。 第一电极连接到每个电池的金属柱，以及连接到半导体衬底的第二电极。 响应于形成具有减小的直径的增加数量的半导体阱并且形成直径减小的金属柱，第一和第二电极之间的电容减小。

公开(公告)号：US08906728B2

公开(公告)日：2014-12-09

申请号：US14171339

申请日：2014-02-03

Applicant: Applied Micro Circuits Corporation ,  Volex PLC

Inventor： Subhash Roy ,  Igor Zhovnirovsky ,  Sergey Vinogradov

IPC: H01L21/00 ,  G01J1/44 ,  H01L31/00 ,  H01L21/66 ,  H01L31/02

CPC classification number: G01J1/44 ,  H01L22/14 ,  H01L27/1446 ,  H01L31/00 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/108 ,  H01L31/1085 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: A photodetector with a bandwidth-tuned cell structure is provided. The photodetector is fabricated from a semiconductor substrate that is heavily doped with a first dopant. A plurality of adjoining cavities is formed in the semiconductor substrate having shared cell walls. A semiconductor well is formed in each cavity, moderately doped with a second dopant opposite in polarity to the first dopant. A layer of oxide is grown overlying the semiconductor wells and an annealing process is performed. Then, metal pillars are formed that extend into each semiconductor well having a central axis aligned with an optical path. A first electrode is connected to the metal pillar of each cell, and a second electrode connected to the semiconductor substrate. The capacitance between the first and second electrodes decreases in response to forming an increased number of semiconductor wells with a reduced diameter, and forming metal pillars with a reduced diameter.

Abstract translation: 提供具有带宽调谐单元结构的光电检测器。 光电检测器由重掺杂第一掺杂剂的半导体衬底制成。 在具有共享单元壁的半导体衬底中形成多个邻接的空腔。 在每个空腔中形成半导体阱，中等掺杂有与第一掺杂剂极性相反的第二掺杂剂。 生长覆盖在半导体阱上的一层氧化物，并进行退火处理。 然后，形成延伸到具有与光路对准的中心轴的每个半导体阱中的金属柱。 第一电极连接到每个电池的金属柱，以及连接到半导体衬底的第二电极。 响应于形成具有减小的直径的增加数量的半导体阱并且形成直径减小的金属柱，第一和第二电极之间的电容减小。

公开(公告)号：US20140082935A1

公开(公告)日：2014-03-27

申请号：US13657331

申请日：2012-10-22

Applicant: VOLEX PLC ,  APPLIED MICRO CIRCUITS CORPORATION

Inventor： Ezra Gold ,  Subhash Roy ,  Igor Zhovnirnovsky

IPC: G02B6/42

CPC classification number: G02B6/4201 ,  G02B6/32 ,  G02B6/4224 ,  G02B6/423 ,  Y10T29/49137 ,  Y10T29/53174

Abstract: A method for placing components on a substrate, the method comprising determining a reference point of a mechanical holding jig based upon a plurality of mechanical features of the mechanical holding jig and placing the substrate into the jig such that mechanical features on the substrate align with the mechanical features on the mechanical holding jig. A location of the substrate is determined with the reference point of the mechanical holding jig. The method continues by installing a plurality of first components onto the substrate aligned to the mechanical holding jig. The substrate is removed from the mechanical holding jig and a second component is placed onto the substrate to cover the plurality of first components. The second component is placed onto the substrate to align a plurality of references points of the second component to the mechanical features on the substrate. The second component is secured to the substrate.

Abstract translation: 一种用于将部件放置在基板上的方法，所述方法包括基于所述机械夹持夹具的多个机械特征确定机械夹持夹具的参考点，并将所述基板放置到所述夹具中，使得所述基板上的机械特征与 机械夹具上的机械特性。 用机械保持夹具的参考点确定基板的位置。 该方法通过将多个第一部件安装到与机械夹持夹具对准的基板上而继续。 将基板从机械夹持夹具中取出，将第二部件放置在基板上以覆盖多个第一部件。 将第二部件放置在基板上以将第二部件的多个参考点对准基板上的机械特征。 第二部件固定在基板上。

公开(公告)号：US20140209801A1

公开(公告)日：2014-07-31

申请号：US14171455

申请日：2014-02-03

Applicant: VOLEX PLC ,  APPLIED MICRO CIRCUITS CORPORATION

Inventor： Subhash Roy ,  Igor Zhovnirovsky ,  Sergey Vinogradov

IPC: G01J1/44

CPC classification number: G01J1/44 ,  H01L22/14 ,  H01L27/1446 ,  H01L31/00 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/108 ,  H01L31/1085 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

Abstract: A photodetector with a bandwidth-tuned cell structure is provided. The photodetector is fabricated from a semiconductor substrate that is heavily doped with a first dopant. A plurality of adjoining cavities is formed in the semiconductor substrate having shared cell walls. A semiconductor well is formed in each cavity, moderately doped with a second dopant opposite in polarity to the first dopant. A layer of oxide is grown overlying the semiconductor wells and an annealing process is performed. Then, metal pillars are formed that extend into each semiconductor well having a central axis aligned with an optical path. A first electrode is connected to the metal pillar of each cell, and a second electrode connected to the semiconductor substrate. The capacitance between the first and second electrodes decreases in response to forming an increased number of semiconductor wells with a reduced diameter, and forming metal pillars with a reduced diameter.

Abstract translation: 提供具有带宽调谐单元结构的光电检测器。 光电检测器由重掺杂第一掺杂剂的半导体衬底制成。 在具有共享单元壁的半导体衬底中形成多个邻接的空腔。 在每个空腔中形成半导体阱，中等掺杂有与第一掺杂剂极性相反的第二掺杂剂。 生长覆盖在半导体阱上的一层氧化物，并进行退火处理。 然后，形成延伸到具有与光路对准的中心轴的每个半导体阱中的金属柱。 第一电极连接到每个电池的金属柱，以及连接到半导体衬底的第二电极。 响应于形成具有减小的直径的增加数量的半导体阱并且形成直径减小的金属柱，第一和第二电极之间的电容减小。