公开(公告)号：US4021294A

公开(公告)日：1977-05-03

申请号：US678744

申请日：1976-04-21

申请人： Valentin Evstafievich Khadzhi ,  Evgeny Matveevich Tsyganov ,  Leonid Iosifovich Tsinober ,  Zhanneta Viktorovna Novozhilova ,  Galina Vasilievna Reshetova ,  Mikhail Isaakovich Samoilovich ,  Vladimir Petrovich Butuzov ,  Anatoly Alexandrovich Shaposhnikov ,  Margarita Vladimirovna Lelekova

发明人： Valentin Evstafievich Khadzhi ,  Evgeny Matveevich Tsyganov ,  Leonid Iosifovich Tsinober ,  Zhanneta Viktorovna Novozhilova ,  Galina Vasilievna Reshetova ,  Mikhail Isaakovich Samoilovich ,  Vladimir Petrovich Butuzov ,  Anatoly Alexandrovich Shaposhnikov ,  Margarita Vladimirovna Lelekova

IPC分类号： C30B7/00 ,  B01J17/04 ,  C01B33/12

CPC分类号： C30B7/00 ,  C30B29/18 ,  Y10S117/902 ,  Y10S117/905

摘要： A process for producing amethyst crystals involving growing of colorless quartz crystals by a hydrothermal method of a temperature drop in a high-pressure autoclave on crystalline quartz seed plates oriented parallel to the crystallographic planes of the major {1011} and minor {1101} rhombohedrons using crystalline quartz as a charge. Said growing is effected from aqueous solutions of potassium carbonate or potassium hydroxide having a concentration ranging from 4 to 7 wt.% and containing iron introduced into the autoclave in the form of metallic iron or in the form of its oxydic or hydroxydic compounds in an amount ranging from 5 to 30 g/l of the solution. The growing process is effected at a crystallization temperature within the range of from 300.degree. to 500.degree. C. under a pressure ranging from 200 to 1,700 kg/cm.sup.2 and a crystal growth rate of from 0.05 to 0.5 mm/day. It is advisable to introduce into the autoclave, prior to the crystal growing, lithium nitrite or lithium nitrate or manganese nitrate in an amount ranging from 1 to 10 g/l of the solution. The thus-grown colorless quartz crystals are exposed to an ionizing irridation. The process for growing crystals according to the present invention is well-reproducible, since it is performed at specfied physico-chemical parameters. The process of the present invention enables the production of amethyst crystals with a high color purity and a high transparency (i.e., with no cracks).

摘要翻译： 一种生产紫水晶的方法，涉及通过在高压高压釜中的温度降低的水热法生长无色石英晶体，晶体石英晶种板平行于主要{1011}和次要{1101}菱面体的晶面取向，使用 晶体石英作为电荷。 所述生长由浓度范围为4至7重量％的碳酸钾或氢氧化钾的水溶液进行，并且含有以金属铁的形式引入高压釜中的铁或其氧化或羟基化合物形式的量 范围为5至30g / l的溶液。 生长过程在300至500℃范围内的结晶温度下在200至1700kg / cm2的压力和0.05-0.5mm /天的晶体生长速率下进行。 建议在晶体生长之前将高压釜引入量为1至10g / l溶液的亚硝酸锂或硝酸锂或硝酸锰。 将如此生长的无色石英晶体暴露于电离刺激。 根据本发明的用于生长晶体的方法是可重现的，因为它在特定的物理化学参数下进行。 本发明的方法能够生产具有高色纯度和高透明度（即没有裂纹）的紫晶晶体。