公开(公告)号：US06677695B2

公开(公告)日：2004-01-13

申请号：US10244630

申请日：2002-09-17

Applicant: Vijayakumar Rudrappa Dhuler ,  Edward Arthur Hill

Inventor： Vijayakumar Rudrappa Dhuler ,  Edward Arthur Hill

IPC: H02N100

CPC classification number: H02N1/006

Abstract: A movable microelectromechanical mirror structure for a microelectromechanical structure (MEMS) has an actuator (electrodes) for the moving mirror. The electrodes are situated at a predetermined angle to the horizontal thus improving the relationship between force applied on the mirror and the gap between the mirror and the electrodes. The angular electrode placement is achieved by the provision of a deformable electrode support member mounted on the substrate, with at least one of the electrodes mounted on the electrode support member, and a deforming element mounted against the deformable electrode support member such as to permanently maintain the deformable electrode support member in a deformed state.

Abstract translation: 用于微机电结构（MEMS）的可移动微机电镜结构具有用于移动反射镜的致动器（电极）。 电极位于与水平面成预定的角度，从而改善了施加在反射镜上的力与反射镜与电极之间的间隙之间的关系。 通过提供安装在基板上的可变形电极支撑构件来实现角电极放置，其中安装在电极支撑构件上的至少一个电极和安装在可变形电极支撑构件上的变形元件，以便永久地保持 所述可变形电极支撑构件处于变形状态。

公开(公告)号：US06229684B1

公开(公告)日：2001-05-08

申请号：US09461247

申请日：1999-12-15

Applicant: Allen Bruce Cowen ,  Vijayakumar Rudrappa Dhuler ,  Edward Arthur Hill ,  David Alan Koester ,  Ramaswamy Mahadevan

Inventor： Allen Bruce Cowen ,  Vijayakumar Rudrappa Dhuler ,  Edward Arthur Hill ,  David Alan Koester ,  Ramaswamy Mahadevan

IPC: H01G501

CPC classification number: H01G5/18 ,  B81B3/0056 ,  F03G7/06 ,  H01G5/16 ,  H01H1/0036 ,  H01H59/0009 ,  H01H61/02 ,  H01H2059/0063 ,  H01H2059/0072 ,  H01H2059/0081 ,  H01H2061/006

Abstract: A variable capacitor having low loss and a correspondingly high Q is provided. In addition to a substrate, the variable capacitor includes at least one substrate electrode and a substrate capacitor plate that are disposed upon the substrate and formed of a low electrical resistance material, such as HTS material or a thick metal layer. The variable capacitor also includes a bimorph member extending outwardly from the substrate and over the at least one substrate electrode. The bimorph member includes first and second layers formed of materials having different coefficients of thermal expansion. The first and second layers of the bimorph member define at least one bimorph electrode and a bimorph capacitor plate such that the establishment of a voltage differential between the substrate electrode and the bimorph electrode moves the bimorph member relative to the substrate electrode, thereby altering the interelectrode spacing as well as the distance between the capacitor plates. As such, the capacitance of the variable capacitor can be controlled based upon the relative spacing between the bimorph member and the underlying substrate. A method is also provided for micromachining or otherwise fabricating a variable capacitor having an electrode and a capacitor plate formed of a low electrical resistance material such that the resulting variable capacitor has low loss and a correspondingly high Q. The variable capacitor can therefore be employed in high frequency applications, such as required by some tunable filters.

Abstract translation: 提供具有低损耗和相应高Q的可变电容器。 除了基板之外，可变电容器包括至少一个基板电极和基板电容器板，其设置在基板上并且由诸如HTS材料或厚金属层的低电阻材料形成。 可变电容器还包括从基板向外延伸并且在至少一个基板电极上方的双压电晶片。 双压电晶片构件包括由具有不同热膨胀系数的材料形成的第一和第二层。 双压电晶片构件的第一和第二层限定至少一个双压电晶片电极和双压电晶片电容器板，使得在衬底电极和双压电晶片电极之间建立电压差使得双压电晶片相对于衬底电极移动，从而改变电极间 间距以及电容器板之间的距离。 因此，可以基于双压电晶片构件和下面的衬底之间的相对间隔来控制可变电容器的电容。 还提供了一种用于微加工或以其他方式制造具有由低电阻材料形成的电极和电容器板的可变电容器的方法，使得所得到的可变电容器具有低损耗和相应高的Q.因此可变电容器可用于 高频应用，如某些可调谐滤波器所要求的。