公开(公告)号：US20050074939A1

公开(公告)日：2005-04-07

申请号：US10676896

申请日：2003-10-01

申请人： Vincent Ho ,  Wee Choi ,  Lap Chan ,  Wai Chim ,  Vivian Ng ,  Cheng Heng ,  Lee Teo

发明人： Vincent Ho ,  Wee Choi ,  Lap Chan ,  Wai Chim ,  Vivian Ng ,  Cheng Heng ,  Lee Teo

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8242 ,  H01L29/423 ,  H01L29/788

CPC分类号： B82Y10/00 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  Y10S438/962

摘要： Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.

摘要翻译： 使用离子注入制造的具有嵌入式硅或锗纳米晶体的器件相对于常规浮栅器件表现出优异的数据保持特性。 然而，现有技术中使用离子注入来制造这些问题。 通过初始使用快速热氧化来生长高质量的薄隧道氧化物层，已经克服了这些。 然后使用化学气相沉积来沉积掺锗的氧化物层。 然后沉积封端氧化物，然后将结构快速热退火以合成锗纳米晶体。

公开(公告)号：US06962850B2

公开(公告)日：2005-11-08

申请号：US10676896

申请日：2003-10-01

申请人： Vincent Ho ,  Wee Kiong Choi ,  Lap Chan ,  Wai Kin Chim ,  Vivian Ng ,  Cheng Lin Heng ,  Lee Wee Teo

发明人： Vincent Ho ,  Wee Kiong Choi ,  Lap Chan ,  Wai Kin Chim ,  Vivian Ng ,  Cheng Lin Heng ,  Lee Wee Teo

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8242 ,  H01L29/423 ,  H01L29/788

CPC分类号： B82Y10/00 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/7881 ,  Y10S438/962

摘要： Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.

公开(公告)号：US06656792B2

公开(公告)日：2003-12-02

申请号：US10087506

申请日：2002-03-01

申请人： Wee Kiong Choi ,  Wai Kin Chim ,  Vivian Ng ,  Lap Chan

发明人： Wee Kiong Choi ,  Wai Kin Chim ,  Vivian Ng ,  Lap Chan

IPC分类号： H01L21336

CPC分类号： B82Y10/00 ,  H01L21/28273 ,  H01L29/42332

摘要： A Flash memory is provided having a trilayer structure of rapid thermal oxide/germanium (Ge) nanocrystals in silicon dioxide (SiO2)/sputtered SiO2 cap with demonstrated via capacitance versus voltage (C-V) measurements having memory hysteresis due to Ge nanocrystals in the middle layer of the trilayer structure. The Ge nanocrystals are synthesized by rapid thermal annealing of a co-sputtered Ge+SiO2 layer.

摘要翻译： 提供了一种闪存，其具有在二氧化硅（SiO 2）/溅射的SiO 2盖中具有快速热氧化物/锗（Ge）纳米晶体的三层结构，其经证实的经由电容对电压（CV）测量具有由于中间层中的Ge纳米晶体而具有记忆滞后 的三层结构。 Ge纳米晶体通过共溅射的Ge + SiO 2层的快速热退火合成。