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公开(公告)号：US4675911A
公开(公告)日：1987-06-23
申请号：US865330
申请日：1986-05-21
申请人： Vladimir Sokolov , James B. Beyer
发明人： Vladimir Sokolov , James B. Beyer
CPC分类号： H03D9/0675 , H03D7/1441 , H03D7/1458 , H03F3/607 , H03D2200/0007 , H03D2200/0013 , H03D2200/0023 , H03D2200/0076 , H03D7/125 , H03D9/0658
摘要： A monolithic microwave integrated circuit broadband mixer in which the distributed amplifier concept is used to develop a broadband mixer circuit.
摘要翻译： 一种单片微波集成电路宽带混频器，其中分布式放大器概念用于开发宽带混频器电路。
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公开(公告)号：US5229655A
公开(公告)日：1993-07-20
申请号：US816395
申请日：1991-12-26
CPC分类号： H03K17/92 , H01L39/145 , H03K3/38
摘要： A superconducting active device has dual control inputs and is constructed such that the output of the device is effectively a linear mix of the two input signals. The device is formed of a film of superconducting material on a substrate and has two main conduction channels, each of which includes a weak link region. A first control line extends adjacent to the weak link region in the first channel and a second control line extends adjacent to the weak link region in the second channel. The current flowing from the first channel flows through an internal control line which is also adjacent to the weak link region of the second channel. The weak link regions comprise small links of superconductor, separated by voids, through which the current flows in each channel. Current passed through the control lines causes magnetic flux vortices which propagate across the weak link regions and control the resistance of these regions. The output of the device taken across the input to the main channels and the output of the second main channel and the internal control line will constitute essentially a linear mix of the two input signals imposed on the two control lines. The device is especially suited to microwave applications since it has very low input capacitance, and is well suited to being formed of high temperature superconducting materials since all of the structures may be formed coplanar with one another on a substrate.
摘要翻译： 超导有源器件具有双重控制输入，并且被构造成使得器件的输出实际上是两个输入信号的线性混合。 该器件由衬底上的超导材料膜形成，并且具有两个主要导电通道，每个导电通道包括弱连接区域。 第一控制线在第一通道中相邻于弱连接区延伸，第二控制线在第二通道中与弱连接区相邻延伸。 从第一通道流出的电流流过也与第二通道的弱连接区相邻的内部控制线。 弱连接区域包括由空隙隔开的超导体的小环节，电流在每个通道中流过。 通过控制线的电流导致磁通量涡流传播穿过弱连接区域并控制这些区域的电阻。 通过输入到主通道的设备的输出和第二主通道和内部控制线的输出将基本上构成施加在两个控制线上的两个输入信号的线性混合。 该器件特别适用于微波应用，因为它具有非常低的输入电容，并且非常适合于由高温超导材料形成，因为所有的结构可以在基板上彼此共面形成。
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公开(公告)号：US5046155A
公开(公告)日：1991-09-03
申请号：US505377
申请日：1990-04-06
申请人： James B. Beyer , Joseph W. Byrne
发明人： James B. Beyer , Joseph W. Byrne
IPC分类号： H03F3/60
CPC分类号： H03F3/607
摘要： A highly directive, broadband, bidirectional distributed amplifier has a series of FETs connected between input and output lines which have their effective transconductances scaled in accordance with binomial coefficients along the distributed amplifier to maximize the directivity of the amplifier. Directivities on the order of -25 to -35 dB are obtained over as much as an octave in frequency. The effective binomial scaling may be achieved by insertion of appropriately sized capacitors in the gate lines of each of the FETs. The minimization bandwidth may be shifted to lower frequencies by incorporating passive impedances between the active devices in both the gate and drain lines. These impedances preferably comprise T-section inserts composed of serially connected lumped inductors and a capacitance from the junction between the inductors to ground. The distributed amplifier is bidirectional so that it can be excited from either port on the gate line with high directivity exhibited at each respective port on the drain line.
摘要翻译： 高度指令性的宽带双向分布式放大器具有连接在输入和输出线之间的一系列FET，它们的有效跨导根据分布式放大器的二项式系数进行放大，以最大化放大器的方向性。 在-25到-35dB的数量级上的方向性可以在频率上多达八度。 可以通过在每个FET的栅极线中插入适当尺寸的电容器来实现有效的二项式缩放。 通过在栅极和漏极线中的有源器件之间并入无源阻抗，可以将最小化带宽转移到较低频率。 这些阻抗优选地包括由串联连接的集总电感器组成的T形插入件和从电感器到地之间的连接处的电容。 分布式放大器是双向的，使得其可以从栅极线上的任一端口被激发，在排列线上的每个相应端口处呈现高方向性。
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公开(公告)号：US5012203A
公开(公告)日：1991-04-30
申请号：US457270
申请日：1989-12-27
申请人： James B. Beyer , Steven Deibele
发明人： James B. Beyer , Steven Deibele
IPC分类号： H03F3/60
CPC分类号： H03F3/607
摘要： A distributed amplifier has a plurality of amplifying sections which are connected between input and output lines comprising artificial transmission line sections. Input line attenuation compensThis invention was made with U.S. Government support awarded by the Department of the Navy, Contract No.: N00014-87-C-0157. The U.S. Government has certain rights in this invention.
摘要翻译： 分布式放大器具有多个放大部分，其连接在包括人造传输线部分的输入和输出线之间。 输入线衰减补偿由连接到输入线的负电阻补偿电路提供。 补偿电路在输入线上提供负电阻，其基本上补偿沿输入线发生的衰减，从而显着增加分布式放大器的可用增益和带宽。 还可以提供负电阻输出线衰减补偿，例如通过利用共源共栅放大电路，该共源共栅放大电路包括第一共源极连接FET和第二共栅连接FET，共栅FET连接到输出线。 输出线衰减补偿的利用为增加分布式放大器的增益和带宽提供了进一步的能力。
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公开(公告)号：US5159346A
公开(公告)日：1992-10-27
申请号：US712931
申请日：1991-06-10
CPC分类号： H03B5/1852 , H03B2200/0028 , H03C3/20
摘要： A voltage controlled oscillator (VCO 10) is disclosed in a "ring" configuration using two FETs. Two isolated voltage control terminals provide increased tuning bandwidth. The design uses an active feedback topology resulting in greater device size for higher output power and circuit Q.
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公开(公告)号：US5019721A
公开(公告)日：1991-05-28
申请号：US395965
申请日：1989-08-18
CPC分类号： H01L39/225 , H01L39/145 , H03K17/92 , H03K3/38 , Y10S505/865 , Y10S505/874
摘要： Active superconducting devices are formed of thin films of superconductor which include a main conduction channel which has an active weak link region. The weak link region is composed of an array of links of thin film superconductor spaced from one another by voids and selected in size and thickness such that magnetic flux can propagate across the weak link region when it is superconducting. Magnetic flux applied to the weak link region will propagate across the array of links causing localized loss of superconductivity in the links and changing the effective resistance across the links. The magnetic flux can be applied from a control line formed of a superconducting film deposited coplanar with the main conduction channel and weak link region on a substrate. The devices can be formed of any type to superconductor but are particularly well suited to the high temperature superconductors since the devices can be entirely formed from coplanar films with no overlying regions. The devices can be utilized for a variety of electrical components, including switching circuits, amplifiers, oscillators and modulators, and are well suited to microwave frequency applications.
摘要翻译： 有源超导器件由超导体的薄膜形成，其包括具有有源弱连接区域的主导通道。 弱连接区域由薄膜超导体的连接阵列组成，薄壁超导体通过空隙彼此间隔开并且在尺寸和厚度上选择，使得当超导时磁通量可以在弱连接区域上传播。 施加到弱连接区域的磁通量将传播到连接的阵列上，导致链路中的超导性的局部损失并且改变跨越链路的有效电阻。 磁通量可以由与基板上的主导电通道和弱连接区共面共面的超导膜形成的控制线施加。 器件可以由任何类型的超导体形成，但是特别适合于高温超导体，因为器件可以由没有上覆区域的共面膜完全形成。 这些器件可用于各种电气元件，包括开关电路，放大器，振荡器和调制器，并且非常适合于微波频率应用。
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公开(公告)号：US4355289A
公开(公告)日：1982-10-19
申请号：US168502
申请日：1980-07-14
申请人： James B. Beyer , James B. Summers
发明人： James B. Beyer , James B. Summers
摘要： A parallel type modulator is disclosed which utilizes a pair of bi-phase modulators (10), each of which are capable of independent phase and amplitude modulation. In each bi-phase modulator, a carrier frequency signal is split by a power splitter (20) into two signals 180.degree. apart in phase which are passed through directional couplers (30 and 31) and a pair of PIN diodes (35 and 36) to a summing junction (37). A bias source circuit (42) delivers biasing current to the coupled outputs of the directional couplers (30, 31) and through the PIN diodes (35, 36) to the summing junction (37); this current is returned to ground through a bias return circuit (44) which conducts the DC or low frequency biasing signal but allows the carrier frequency output signal to be passed through to the output of each bi-phase modulator. Reduction of the bias current to one diode below null levels at which the intermediate signals cancel will cause a carrier frequency signal to appear at the summing junction which will be in phase with the signal passed through the other diode. A continuous variation of the bias current through one of the diodes at a level below the null current level will result in amplitude modulation of the output signal at the summing junction. The PIN diodes are always operated in their conducting regions so that large parasitic reactances at microwave frequencies are avoided. A parallel modulator can be formed of a pair of the bi-phase modulators provided with carrier frequency signals in quadrature, and with the outputs of each bi-phase modulator being summed to yield an output signal at the carrier frequency which can have an arbitrary phase angle and continuous modulation of amplitude.
摘要翻译： 公开了一种并联型调制器，其使用一对双相调制器（10），每个双相调制器能够独立的相位和幅度调制。 在每个双相调制器中，载波频率信号由功率分配器（20）分成两个相位相差180°的信号，通过定向耦合器（30和31）和一对PIN二极管（35和36） 到总结交界处（37）。 偏置源电路（42）将偏置电流传送到定向耦合器（30,31）的耦合输出端并通过PIN二极管（35,36）传送到求和结（37）; 该电流通过传导DC或低频偏置信号的偏置返回电路（44）返回到地面，但允许载波频率输出信号通过每个双相调制器的输出。 低于中间信号消除的零电平以下的一个二极管的偏置电流将使得载波频率信号出现在与将通过另一个二极管的信号同相的求和结点处。 在低于零电流电平的电平上通过二极管之一的偏置电流的连续变化将导致在加法结处的输出信号的幅度调制。 PIN二极管总是在其导电区域中工作，从而避免了微波频率处的大的寄生电抗。 并联调制器可以由一对正交的载波频率信号的双相调制器形成，并且每个双相调制器的输出被相加以产生载波频率处的输出信号，该输出信号可以具有任意相位 角度和连续调制幅度。
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