Bad page management in storage devices

    公开(公告)号:US10445199B2

    公开(公告)日:2019-10-15

    申请号:US15388883

    申请日:2016-12-22

    IPC分类号: G06F11/00 G06F11/20 G06F3/06

    摘要: The present disclosure generally relates to methods for managing bad pages in storage devices. When a page is bad or faulty, a spare page is used to store the data because the bad or faulty page is unreliable for data storage. When the time comes to read the data from the bad page or write data onto the page, there needs to be some direction to the spare page. The bad or faulty page may contain a pointer to direct to the location of the spare page or metadata containing directions to the location of the spare page. A hash function may be used to calculate that the stored data in the bad or faulty page is incorrect and, once decoded, provide direction to the spare page. By using pointers, metadata or hash functions, additional data tables are unnecessary and data storage is more efficient.

    Access network for address mapping in non-volatile memories

    公开(公告)号:US10452533B2

    公开(公告)日:2019-10-22

    申请号:US15449612

    申请日:2017-03-03

    摘要: Systems and methods for determining a physical block address (PBA) of a non-volatile memory (NVM) to enable a data access of a corresponding logical block address (LBA) are described. One such method includes generating a first physical block address (PBA) candidate from a LBA using a first function; generating a second physical block address (PBA) candidate from the LBA using a second function; and selecting either the first PBA candidate or the second PBA candidate for the data access based on information related to a background swap of data stored at the first PBA candidate and a background swap of data stored at the second PBA candidate.

    Wear leveling in non-volatile memory

    公开(公告)号:US11513950B2

    公开(公告)日:2022-11-29

    申请号:US17213005

    申请日:2021-03-25

    摘要: A method, circuit, and system for managing wear levelling in non-volatile memory. First, an original physical block address (PBA) for a logical block address (LBA) of a write operation may be received. The original PBA is one of a set of PBAs for data blocks of a non-volatile memory array. Each of these PBAs may be uniquely mapped to a particular LBA using a multistage interconnection network (MIN). A swap PBA may next be determined for the LBA. The swap PBA may be selected from the set of PBAs uniquely mapped using the MIN. Then, the MIN may be configured to map the LBA to the swap PBA. Finally, data of a first data block stored at the original PBA may be swapped with data of a second data block stored at the swap PBA.

    Data reliability information in a non-volatile memory device

    公开(公告)号:US10459793B2

    公开(公告)日:2019-10-29

    申请号:US15073409

    申请日:2016-03-17

    IPC分类号: G11C29/00 G06F11/10 G11C29/52

    摘要: A data storage device may include a non-volatile memory array and a controller. The non-volatile memory array may include a plurality of dies. Each die of the plurality of data dies may include a plurality of words, where a word is an access unit of a die. The controller may be configured to store user data to a respective first word of at least a first die and a second die of the plurality of data dies. A page of user data may include the user data stored at the respective first words of the at least first die and second die. The controller may also be configured to store parity data to a first portion of a first word of a third die. The controller may be further configured to store metadata to a second portion of the first word of the third die.

    Non-binary ECCs for low latency read, fractional bits per cell of NAND flash

    公开(公告)号:US10175890B2

    公开(公告)日:2019-01-08

    申请号:US15388623

    申请日:2016-12-22

    IPC分类号: G06F3/06 G06F11/10 G11C29/52

    摘要: The present disclosure generally relates to methods of reading data from a memory device using non-binary ECCs. The memory device includes multiple memory cells where each memory cell has multiple pages that are arranged in distinct layouts for physical addresses thereof. When a read request is received from a host device to obtain data from a specific page of a specific memory cell of a memory device, rather than reading the data from all pages of the memory cell, the data can be read from just the desired page and then decoded. Following decoding, the data can be delivered to the host device. Because only the data from a specific page of a memory cell is read, rather than the entire memory cell, the read latency is reduced when compared to reading the entire memory cell.

    DETERMINING CONTROL STATES FOR ADDRESS MAPPING IN NON-VOLATILE MEMORIES

    公开(公告)号:US20170293555A1

    公开(公告)日:2017-10-12

    申请号:US15627042

    申请日:2017-06-19

    IPC分类号: G06F12/06 G06F12/02

    摘要: Systems and methods for determining a cumulative control state for mapping logical block addresses (LBAs) to physical block addresses (PBAs) are disclosed. One such system includes a bitonic network including first switches and configured to receive a first randomly ordered list and random switch settings, determine a permutation of the first randomly ordered list using the random switch settings at the first switches, where the permutation includes a second randomly ordered list, and output the second randomly ordered list; a bitonic sorter including second switches and configured to receive the second randomly ordered list, sort the second randomly ordered list, and output settings of the second switches used to achieve the sort, where the second switch settings define a cumulative control state; and an access network configured to determine a PBA of a non-volatile memory (NVM) to enable a data access of a corresponding LBA using the cumulative control state.

    Wear leveling in non-volatile memories

    公开(公告)号:US10452560B2

    公开(公告)日:2019-10-22

    申请号:US15627091

    申请日:2017-06-19

    摘要: Systems and methods for wear leveling in non-volatile memories (NVMs) are disclosed. One such system includes a cumulative control state determiner configured to determine a cumulative control state indicative of a state of random mappings between physical block addresses (PBAs) and logical block addresses (LBAs) of an NVM, an access network configured to translate a LBA to a PBA based on the cumulative control state, and a background swap scheduler configured to swap PBAs assigned to preselected LBAs based on a control state. One such method involves determining a cumulative control state indicative of a state of random mappings between physical block addresses (PBAs) and logical block addresses (LBAs) of an NVM, translating a LBA to a PBA based on the cumulative control state, and swapping PBAs assigned to preselected LBAs based on a control state.

    Determining control states for address mapping in non-volatile memories

    公开(公告)号:US10445232B2

    公开(公告)日:2019-10-15

    申请号:US15627042

    申请日:2017-06-19

    IPC分类号: G06F12/06 G06F12/02 G06F3/06

    摘要: Systems and methods for determining a cumulative control state for mapping logical block addresses (LBAs) to physical block addresses (PBAs) are disclosed. One such system includes a bitonic network including first switches and configured to receive a first randomly ordered list and random switch settings, determine a permutation of the first randomly ordered list using the random switch settings at the first switches, where the permutation includes a second randomly ordered list, and output the second randomly ordered list; a bitonic sorter including second switches and configured to receive the second randomly ordered list, sort the second randomly ordered list, and output settings of the second switches used to achieve the sort, where the second switch settings define a cumulative control state; and an access network configured to determine a PBA of a non-volatile memory (NVM) to enable a data access of a corresponding LBA using the cumulative control state.