公开(公告)号：US3504181A

公开(公告)日：1970-03-31

申请号：US3504181D

申请日：1966-10-06

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： CHANG HUNG CHI ,  CAMPBELL ROBERT B ,  CRULL MARVIN L

IPC: F23N5/08 ,  H01L27/144 ,  H01L29/24 ,  H01L31/00 ,  G01T1/16 ,  H01J39/00 ,  H01J39/12

CPC classification number: H01L29/242 ,  F23N5/082 ,  F23N2029/16 ,  F23N2037/02 ,  H01L27/1446 ,  H01L31/00 ,  Y10S148/085 ,  Y10S148/148

公开(公告)号：US3896313A

公开(公告)日：1975-07-22

申请号：US43395974

申请日：1974-01-16

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： BERMAN HERBERT A ,  CAMPBELL ROBERT B ,  LOFTUS WALLACE D

IPC: G01J1/44 ,  G01J1/42 ,  H01L31/10 ,  G01T1/24

CPC classification number: G01J1/4228

Abstract: A photodetector apparatus is provided having an output only when exposed to electromagnetic radiation above or below a specified cut-off frequency. At least first and second light sensor means produce electrical signals responsive to electromagnetic radiation of first and second overlapping frequency ranges, respectively, and peak electrical responses at different first and second peak frequencies, respectively. Electrical means compare the electrical signals from at least said first and second light sensor means and produces an electrical signal preferably of only one polarity and equal to a product of a first constant times the amplitude of the electrical signal produced by said first light sensor means minus a product of a second constant times the amplitude of the electrical signal produced by said second light sensor. The apparatus is particularly useful in ultraviolet detection where the sensor means are comprised of separate silicon carbide semiconductor bodies each containing a PN junction.

公开(公告)号：US3563817A

公开(公告)日：1971-02-16

申请号：US3563817D

申请日：1968-10-04

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： CHANG HUNG CHI ,  CAMPBELL ROBERT B ,  CRULL MARVIN L

IPC: F23N5/08 ,  H01L27/144 ,  H01L31/00 ,  H01L7/32

CPC classification number: H01L27/1446 ,  F23N5/08 ,  F23N5/082 ,  F23N2029/16 ,  F23N2037/02 ,  H01L31/00 ,  Y10S438/931

Abstract: A METHOD OF PRODUCING A SILICON CARBIDE ULTRAVIOLET RADIATION DETECTOR IN WHICH SILICON CARBIDE IS COATED WITH SILICON OXIDE, SELECTED PORTIONS OF THE SILICON OXIDE ARE REMOVED, THE EXPOSED SILICON CARBIDE IS CHEMICALLY ETCHED TO PRODUCE SEVERAL MESA STRUCTURES, THE REMAINING SILICON OXIDE IS REMOVED, AN IMPURITY IS DIFFUSED INTO THE SILICON CARBIDE TO FORM A REGION OF SECON TYPE SEMICONDUCTIVITY INCLUDING THE MESA STRUCTURES AND FORMING A P-N JUNCTION THEREIN MESA STRUCTURES ARE REMOVED THEREBY FORMING A PLURALITY OF JUNCTION STRUCTURES, AND ETCHING AT LEAST ONE JUNCTION STRUCTURE''S REGION TO REDUCE THE REGION TO A THICKNESS NO GREATER THAN 10 MICRONS. THE PREFERRED ETCHANT IN THE FIRST ETCHING STEP IS A MIXTURE OF OXYGEN, CHLORINE, AND ARGON GASES. THE ULTRAVIOLET RADIATION DETECTION SYSTEM COMPRISES A BODY OF SILICON CARBIDE SEMICONDUCTOR MATERIAL HAVING A TOP SURFACE AND A BOTTOM SURFACE. THE SILICON CARBIDE BODY HAS AT LEAST ONE REGION OF A FIRST TYPE SEMICONDUCTIVITY, AT LEAST ONE REGION OF A SECOND TYPE SEMICONDUCTIVTY, AND A P-N JUNCTION FORMED BY THE INTERFACE OF EACH PAIR OF REGIONS OF DIFFERENT TYPE SEMICONDUCTIVITY. AT LEAST A PORTION OF THE P-N JUNCTION CLOSET TO THE TOP SURFACE OF THE BODY IS NO GREATER THAN 10 MICRONS FROM THE TOP SURFACE WHEREBY THAT PORTIONS IS SENSITIVE ONLY TO A PREDETERMINED WAVELENGTH WITHIN THE ULTRAVIOLET RADIATION PORTION OF THE SPECTRUM WHEN THE TOP SURFACE OF THE DEVICE IS EXPOSED TO A SOURCE OF RADIATION.