公开(公告)号：US3615935A

公开(公告)日：1971-10-26

申请号：US3615935D

申请日：1967-05-22

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： O'KEEFFE TERENCE W ,  LARKIN MELVYN W

IPC: H01L21/00 ,  H01L21/316 ,  H01L7/54

CPC classification number: H01L21/31662 ,  H01L21/00 ,  H01L21/02238 ,  H01L21/02255 ,  Y10S438/942

Abstract: A process for the fabrication of semiconductor devices is described utilizing an insulating layer such as silicon dioxide for diffusion masks and contact mask wherein openings in the insulating layer are produced by etching following selective bombardment with particles such as electrons without the use of conventional etch-resistant materials such as photoresists.