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    Masked photocathode and method of making same
    1.
    发明授权
    Masked photocathode and method of making same 失效
    掩蔽光栅及其制作方法

    公开(公告)号：US3672987A

    公开(公告)日：1972-06-27

    申请号：US3672987D

    申请日：1969-12-23

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： O'KEEFFE TERENCE W ,  MORRIS JEROME R

    IPC: H01J40/06 ,  H01J31/06

    CPC classification number: H01J40/06 ,  Y10S148/043 ,  Y10S148/085 ,  Y10S148/106 ,  Y10S148/12 ,  Y10S148/15

    Abstract: A MASKED PHOTOCATHODE IS PROVIDED HAVING ON A RADIATION TRANSMISSIVE SUPPORT A MASK PATTERN OF A MATERIAL THAT ABSORBS OR REFLECTS SENSITIZING RADIATION PARTICULARLY IN THE ULTRAVIOLET. IN ONE FORM, THE MASK IS FORMED IN A PROCESS THAT INCLUDES AT LEAST PARTIAL OXIDATION OF A METAL LAYER PATTERN. ALTERNATIVELY, A MASK PATTERN THAT BLOCKS ALL RADIATION WITH HIGH REFLECTIVITY MAY BE FORMED BY EMPLOYING A METAL WITH A SUBSEQUENT INSULATING LAYER, SUCH AS OF AN OXIDE OF THE METAL OR A SEPARATELY DEPOSITED INSULATOR, FOR PROTECTION FROM THE PHOTOCATHODE. IN ANOTHER FORM THE PHTOEMISSIVE LAYER MAY BE DEPOSITED DIRECTLY ON THE TRANSMISSIVE SUPPORT AND HAVE ON ITS SURFACE A PATTERN OF ORGANIC MATERIAL TO PROVIDE THE MASK FOR ELECTRONS ON THE TARGET SIDE OF THE CATHODE AS WELL AS TO PREVENT ANY RADIATION REFLECTED FROM THE TARGET FROM IMPINGING ON AREAS FROM WHICH PHOTOEMISSION IS NOT DESIRED.

    Making of micro-miniature electronic components by selective oxidation
    3.
    发明授权
    Making of micro-miniature electronic components by selective oxidation 失效
    通过选择性氧化制造微型电子元件

    公开(公告)号：US3867148A

    公开(公告)日：1975-02-18

    申请号：US43165674

    申请日：1974-01-08

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： O'KEEFFE TERENCE W ,  SIMON ALAN J

    IPC: H01C17/06 ,  H01L21/00 ,  H01L21/306 ,  H01L21/316 ,  H05K3/06 ,  C23F1/02 ,  G03C5/00

    CPC classification number: H01L21/31683 ,  H01L21/00 ,  Y10S430/143

    Abstract: A micro-miniature electronic component and particularly an electromask of high resolution is made by first applying a metal layer, of a composition, such as titanium, capable of being etched by an etchant at a relatively high rate and capable of becoming relatively etchant resistant on oxidation, over a major surface of a substrate. A desired component pattern is then defined, preferably by selective exposure with an electron beam, in a resist layer directly overlaid on the metal layer by difference in solubility between exposed and unexposed portions of the resist. The desired component pattern is then transferred to the metal layer by (i) removing less soluble portions of the resist layer to expose first portions of the metal layer, (ii) applying over said exposed first portions and the remaining portions of resist layer an oxidation masking layer of a composition such as aluminum, being relatively oxidation resistant compared to the metal layer and being relatively etchable compared to the metal layer when oxidized, (iii) removing the remaining portions of the resist layer and overlying oxidation masking layer to expose second portions of the metal layer, (iv) selectively oxidizing the second portions of the metal layer to become relatively etchant resistant while said first portions of the metal layer are masked against oxidation by the masking layer, and (v) removing the remaining portions of the oxidation masking layer and underlying unoxidized first portions of the metal layer by etching.

    Abstract translation: 微型电子部件，特别是高分辨率的电子掩模是通过首先施加金属层，诸如钛的组合物，能够以较高的速率被蚀刻剂蚀刻并能够变得相对耐蚀性 氧化，在基底的主表面上。 然后，优选通过电子束的选择性曝光来限定通过抗蚀剂的曝光部分和未曝光部分之间的溶解度的差异直接覆盖在金属层上的抗蚀剂层。 然后，通过（i）除去抗蚀剂层的较少可溶部分以暴露金属层的第一部分，将所需的组分图案转移到金属层，（ii）在所述暴露的第一部分和抗蚀剂层的剩余部分上施加氧化 诸如铝的组合物的掩模层与金属层相比相对抗氧化，并且当被氧化时与金属层相比是相对可蚀刻的，（iii）去除抗蚀剂层的剩余部分并覆盖氧化掩模层以暴露第二部分 （iv）选择性地氧化金属层的第二部分以变得相对耐蚀性，同时金属层的第一部分被掩蔽层掩蔽以防止被掩蔽层氧化，和（v）去除剩余的氧化部分 掩模层和金属层的下层的未氧化的第一部分。

    Masked photocathode
    5.
    发明授权
    Masked photocathode 失效
    屏蔽光刻胶

    公开(公告)号：US3686028A

    公开(公告)日：1972-08-22

    申请号：US3686028D

    申请日：1970-09-24

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： O'KEEFFE TERENCE W

    IPC: H01J29/38 ,  H01J39/06

    CPC classification number: H01J29/38

    Abstract: A SHADOW MASK PARTICULARLY FOR USE WITH ULTRAVIOLET SENSITIVE PHOTOCATHODES IS PROVIDED OF A MATERIAL THAT DOES NOT TRANSMIT ULTRAVIOLET RADIATION AND WHICH, FURTHERMORE, DOES NOT ABSORBS OTHER WAVELENGTH RADIATION, SUCH AS VISIBLE. THIS PERMITS THE PHOTOCATHODE TO BE IMMEDIATELY ADJACENT THE MASK BECAUSE WHEN EXPOSED BY A HIGHLY INTENSITY LIGHT

    SOURCE APPRECIABLE HEATING IN THE MASK MATERIAL THAT WOULD DAMAGE THE PHOTOCATHODE DOES NOT OCCUR. THE MASK MAY BE, FOR EXAMPLE, AN ULTRAVILET ABSORBER, SUCH AS TITANIUM IONS IN A TITANIUM OXIDE.

    Method and apparatus for electron beam alignment with a member
    8.
    发明授权
    Method and apparatus for electron beam alignment with a member 失效
    与元件电子束对准的方法和装置

    公开(公告)号：US3895234A

    公开(公告)日：1975-07-15

    申请号：US40224873

    申请日：1973-10-01

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： O'KEEFFE TERENCE W ,  MALMBERG PAUL R

    IPC: H01L21/027 ,  H01J37/30 ,  H01J37/304 ,  H01J29/50 ,  H01J31/49

    CPC classification number: H01J37/30 ,  H01J37/3045

    Abstract: A method and apparatus are provided for alignment of an electron beam with precisely located areas of a major surface of a member. Marks of predetermined shape are formed of cathodoluminescent material and are positioned adjacent the major surface of the member which is preferably substantially transparent to the cathodoluminescense generated by the marks. An electron beam to be aligned has at least one alignment beam portion of a predetermined cross-sectional shape and preferably corresponds in size to the alignment accuracy desired. The cathodoluminescence emissions detected by a detector means are preferably positioned adjacent the opposite surface of the member. The position of the electron beam is moved relative to the member while continuing said detection until the emissions detected indicate alignment of the alignment beam portion with a corresponding mark. Preferably, said alignment method is used in producing a very accurate component pattern in an electroresist layer supported by a member utilizing either a scanning electron beam or an electron image projection system for the electron radiation beam, and most preferably in the making of a novel photocathode source, which can itself be used in the alignment of a patterned electron beam with a member.

    Abstract translation: 提供了一种方法和装置，用于使电子束与构件的主表面的精确定位的区域对准。 预定形状的标记由阴极发光材料形成，并且位于与构件的主表面相邻的位置处，该主表面优选对于由标记产生的阴极射线管基本上是透明的。 待对准的电子束具有至少一个具有预定横截面形状的对准光束部分，并且优选地对应于所需的对准精度。 由检测器装置检测到的阴极发光发射优选地位于与构件的相对表面相邻的位置。 电子束的位置相对于构件移动，同时继续所述检测，直到检测到的发射表示对准光束部分与对应标记的对准。 优选地，所述对准方法用于在由利用扫描电子束或电子辐射束的电子图像投影系统的构件支撑的电阻层中产生非常精确的构件图案，最优选地，在制造新的光电阴极 源，其本身可用于图案化电子束与构件的对准。

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