公开(公告)号：US20160067663A1

公开(公告)日：2016-03-10

申请号：US14782855

申请日：2014-03-19

Applicant: WACKER CHEMIE AG

Inventor： Friedrich POPP ,  Christian KUTZA ,  Martin ROECKL ,  Tobias WEISS

IPC: B01J4/00 ,  B05B1/20 ,  C01B33/035

Abstract: A gas distribution system for a polysilicon deposition reactor eliminates or mitigates the problems associated with prior art distribution systems employs at least two segments which are gas-tightly connected to one another by readily detachable fasteners, with at least one gas inlet opening and one gas outlet opening, the gas distributor of the system being mounted by readily detachable fasteners to the polysilicon reactor.

Abstract translation: 用于多晶硅沉积反应器的气体分配系统消除或减轻与现有技术分配系统相关的问题，采用通过易拆卸的紧固件彼此气密地连接的至少两个段，其中至少一个气体入口和一个气体出口 系统的气体分配器通过容易拆卸的紧固件安装到多晶硅反应器。

公开(公告)号：US20170305748A1

公开(公告)日：2017-10-26

申请号：US15505191

申请日：2015-08-10

Applicant: Wacker Chemie AG

Inventor： Friedrich POPP ,  Harald HERTLEIN

IPC: C01B33/035 ,  C23C16/01 ,  C23C16/02 ,  C23C16/24

CPC classification number: C01B33/035 ,  C23C16/01 ,  C23C16/0227 ,  C23C16/24

Abstract: The rate of rod fallover in the production of polycrystalline silicon by the Siemens process is sharply reduced by cleaning the Siemens reactor base plate by at least a two-step procedure comprising suctioning the base plate in one step, and subsequently cleaning with liquid or solid cleaning medium in a second step, between each phase of rod removal and new support body installation.

公开(公告)号：US20170001869A1

公开(公告)日：2017-01-05

申请号：US15116251

申请日：2015-01-22

Applicant: WACKER CHEMIE AG

Inventor： Harald HERTLEIN ,  Friedrich POPP

IPC: C01B33/035 ,  C23C16/44 ,  C23C16/24

CPC classification number: C01B33/035 ,  C23C16/24 ,  C23C16/4408 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262

Abstract: The native oxide layer on silicon support rods in the Siemens polysilicon production process is removed by heating the rods to a temperature of 1100-1200° C. and contacting the rods with hydrogen at a system pressure of 1.1E5 to 6E6 Pa. Oxide is rapidly removed, reducing overall process time and increasing space time yield. The use of hydrogen, optionally purified from a polysilicon deposition and containing only traces of HCl reduces reactor corrosion and loss of silicon from the support rods.

Abstract translation: 西门子多晶硅生产过程中硅支撑杆上的天然氧化物层通过将棒加热至1100-1200℃的温度并将其与系统压力为1.1E5至6E6Pa的氢接触来除去氧化物迅速 去除，减少总体处理时间和增加空间时间产量。 使用氢气，任选地从多晶硅沉积物中纯化并仅含有痕量HCl可以降低反应器腐蚀和从支撑棒中的硅损失。

公开(公告)号：US20160045940A1

公开(公告)日：2016-02-18

申请号：US14783858

申请日：2014-03-20

Applicant: WACKER CHEMIE AG

Inventor： Harald HERTLEIN ,  Friedrich POPP

IPC: B08B3/08 ,  C01B33/02 ,  B08B3/10

CPC classification number: B08B3/08 ,  B08B1/00 ,  B08B3/04 ,  B08B3/10 ,  C01B33/02 ,  C01B33/035

Abstract: Contamination of surfaces of polysilicon rods removed from a Siemens reactor in a polysilicon production facility is reduced by cleaning the production facility at least every other week with a cleaning liquid containing water, optionally also containing neutral surfactants.

Abstract translation: 通过使用含水清洗液，任选还含有中性表面活性剂，至少每隔一周清洁生产设备来减少从多晶硅生产设备中的西门子反应器中除去的多晶硅棒表面的污染。