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    GRANULAR POLYCRYSTALLINE SILICON AND PRODUCTION THEREOF
    2.
    发明申请
    GRANULAR POLYCRYSTALLINE SILICON AND PRODUCTION THEREOF 有权
    颗粒状多晶硅及其生产

    公开(公告)号：US20130295385A1

    公开(公告)日：2013-11-07

    申请号：US13888518

    申请日：2013-05-07

    Applicant: Wacker Chemie AG

    Inventor： Harald HERTLEIN ,  Rainer HAUSWIRTH ,  Dieter WEIDHAUS

    IPC: C01B33/02 ,  C23C16/24 ,  C23C16/442

    CPC classification number: C01B33/02 ,  C01B33/03 ,  C01P2002/90 ,  C01P2004/03 ,  C01P2004/45 ,  C01P2004/50 ,  C01P2006/12 ,  C01P2006/80 ,  C23C16/24 ,  C23C16/442 ,  Y10T428/2982

    Abstract: Granular polycrystalline silicon includes a compact matrix including radiating acicular crystal aggregates of crystal size from 0.001-200 μm. A process for producing granular polycrystalline silicon includes producing granular silicon in a fluidized bed reactor from a gas mixture containing TCS (20-29 mol %) and hydrogen at a fluidized bed temperature of 900-970° C., dividing the granular silicon in a screen system having at least one screen deck into at least two screen fractions, the smallest screen fraction being ground in a grinding system to give seed particles having a size of 100-1500 μm and a mass-based median value from 400 to 900 μm, and these seed particles being supplied to fluidized bed reactor, and a further screen fraction being supplied to a fluidized bed reactor, and being surface-treated with a gas mixture containing TCS (5.1-10 mol %) and hydrogen at a fluidized bed temperature of 870-990° C.

    Abstract translation: 颗粒状多晶硅包括紧凑的基体，包括散射出0.001-200μm的晶体尺寸的针状结晶聚集体。 一种生产颗粒状多晶硅的方法包括在流化床反应器中由流化床温度为900-970℃的TCS（20-29mol％）和氢气的气体混合物制备颗粒状硅，将粒状硅分成 筛网系统具有至少一个筛板，至少两个筛分部分，最小筛分部分在研磨系统中研磨以得到尺寸为100-1500μm的种子颗粒和基于质量的中值为400至900μm， 并将这些种子颗粒供应到流化床反应器，并将另外的筛分部分供入流化床反应器，并在流化床温度为TCS（5.1-10mol％）和氢气的气体混合物进行表面处理 870-990℃

    METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
    5.
    发明申请
    METHOD FOR PRODUCING POLYCRYSTALLINE SILICON 审中-公开
    生产多晶硅的方法

    公开(公告)号：US20170001869A1

    公开(公告)日：2017-01-05

    申请号：US15116251

    申请日：2015-01-22

    Applicant: WACKER CHEMIE AG

    Inventor： Harald HERTLEIN ,  Friedrich POPP

    IPC: C01B33/035 ,  C23C16/44 ,  C23C16/24

    CPC classification number: C01B33/035 ,  C23C16/24 ,  C23C16/4408 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262

    Abstract: The native oxide layer on silicon support rods in the Siemens polysilicon production process is removed by heating the rods to a temperature of 1100-1200° C. and contacting the rods with hydrogen at a system pressure of 1.1E5 to 6E6 Pa. Oxide is rapidly removed, reducing overall process time and increasing space time yield. The use of hydrogen, optionally purified from a polysilicon deposition and containing only traces of HCl reduces reactor corrosion and loss of silicon from the support rods.

    Abstract translation: 西门子多晶硅生产过程中硅支撑杆上的天然氧化物层通过将棒加热至1100-1200℃的温度并将其与系统压力为1.1E5至6E6Pa的氢接触来除去氧化物迅速 去除，减少总体处理时间和增加空间时间产量。 使用氢气，任选地从多晶硅沉积物中纯化并仅含有痕量HCl可以降低反应器腐蚀和从支撑棒中的硅损失。

    FLUIDIZED BED REACTOR AND METHOD FOR PRODUCING GRANULAR POLYSILICON
    6.
    发明申请
    FLUIDIZED BED REACTOR AND METHOD FOR PRODUCING GRANULAR POLYSILICON 有权
    流化床反应器和生产颗粒聚硅氧烷的方法

    公开(公告)号：US20160236940A1

    公开(公告)日：2016-08-18

    申请号：US14888594

    申请日：2014-04-15

    Applicant: WACKER CHEMIE AG

    Inventor： Dirk WECKESSER ,  Harald HERTLEIN

    IPC: C01B33/03 ,  B01J8/18

    CPC classification number: C01B33/03 ,  B01J8/1809 ,  B01J8/1827 ,  B01J8/1872 ,  B01J2208/00017 ,  B01J2208/00548 ,  B01J2208/00628 ,  B01J2208/00663 ,  B01J2208/00725 ,  B01J2208/00752 ,  B01J2208/00761 ,  B01J2208/00902 ,  B01J2208/065 ,  C01B33/027

    Abstract: Granular polysilicon is produced in a fluidized-bed reactor by fluidizing silicon particles by means of a gas flow in a fluidized bed heated to a temperature of 850-1100° C., adding a silicon-containing reaction gas by means of a nozzle and depositing of silicon on the silicon particles, wherein, in at least 56% of an axially symmetric region around a nozzle opening of the nozzle,the reaction gas concentration is greater than 75% of the maximum concentration of the reaction gas (10 to 50 mol %),the fluidized-bed temperature is greater than 95% of the fluidized-bed temperature outside the axially symmetric region (850-1100° C.) andthe solids concentration is greater than 85% of the solids concentration at the edge of the fluidized bed (55 to 90% by volume).

    Abstract translation: 通过在加热到850-1100℃的流化床中的气流使硅颗粒流化，在流化床反应器中产生颗粒状多晶硅，通过喷嘴加入含硅反应气体和沉积 的硅颗粒上的硅，其中，在喷嘴的喷嘴开口周围的轴向对称区域的至少56％中，反应气体浓度大于反应气体的最大浓度的75％（10〜50摩尔％ ），流化床温度大于轴向对称区域（850-1100℃）之外的流化床温度的95％，固体浓度大于流化床边缘处固体浓度的85％ 床（55〜90％）。

    CLEANING OF CVD PRODUCTION SPACES
    7.
    发明申请
    CLEANING OF CVD PRODUCTION SPACES 有权
    清洁CVD生产空间

    公开(公告)号：US20160045940A1

    公开(公告)日：2016-02-18

    申请号：US14783858

    申请日：2014-03-20

    Applicant: WACKER CHEMIE AG

    Inventor： Harald HERTLEIN ,  Friedrich POPP

    IPC: B08B3/08 ,  C01B33/02 ,  B08B3/10

    CPC classification number: B08B3/08 ,  B08B1/00 ,  B08B3/04 ,  B08B3/10 ,  C01B33/02 ,  C01B33/035

    Abstract: Contamination of surfaces of polysilicon rods removed from a Siemens reactor in a polysilicon production facility is reduced by cleaning the production facility at least every other week with a cleaning liquid containing water, optionally also containing neutral surfactants.

    Abstract translation: 通过使用含水清洗液，任选还含有中性表面活性剂，至少每隔一周清洁生产设备来减少从多晶硅生产设备中的西门子反应器中除去的多晶硅棒表面的污染。

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