Metal-semiconductor ohmic contacts and methods of fabrication
    1.
    发明授权
    Metal-semiconductor ohmic contacts and methods of fabrication 失效
    金属半导体欧姆接触和制造方法

    公开(公告)号:US3983264A

    公开(公告)日:1976-09-28

    申请号:US434464

    申请日:1974-01-18

    摘要: Ohmic contacts to semiconductor surfaces are fabricated by a process which includes the formation of an adherent, uniform insulating film at the interface between the semiconductor surface and the metallization layer. The insulating film contains stationary charges of sign opposite to the sign of the conductivity of the semiconductor whereby image charges are introduced in the semiconductor. These image charges are located near the semiconductor surface and are of sufficient density to induce the formation of an accumulation layer. The minimum charge density required in the insulating layer is determined by the density of the surface states, Q.sub.ss, in the semiconductor. Minimum Q.sub.ss for silicon is about 5 .times. 10.sup.10 charges/cm.sup.2. The structure thus formed will present an electrical resistance resulting almost solely from the tunneling resistance of the insulating layer. Such a resistance is far smaller than the resistance one would observe in a structure consisting only of the semiconductor and metallization layer because the resistance of the structure is dominated by the resistance of the Schottky barrier formed at the metal-semiconductor interface. For example, just prior to metallization, an oxide-masked silicon wafer is subjected to argon ion bombardment for surface cleaning and activation, followed by oxygen ion bombardment for a time sufficient to form a uniform layer of silicon oxide having a thickness on the order of about 20 Angstroms. Subsequent metallization produces a specific contact resistance of about 5 .times. 10.sup.-.sup.7 ohm-cm.sup.2 on a silicon region having a resistivity of 1.0 ohm-cm, without previous contact diffusion or subsequent metal-semiconductor annealing.

    摘要翻译: 通过包括在半导体表面和金属化层之间的界面处形成粘附的均匀绝缘膜的工艺来制造与半导体表面的欧姆接触。 绝缘膜包含与半导体的电导率的符号相反的符号的固定电荷,由此在半导体中引入图像电荷。 这些图像电荷位于半导体表面附近并且具有足够的密度以诱导积聚层的形成。 绝缘层中所需的最小电荷密度由半导体中的表面状态Qss的密度决定。 硅的最小Qss约为5×10 10电荷/ cm 2。 这样形成的结构将呈现几乎完全由绝缘层的隧穿电阻产生的电阻。 这种电阻远远小于仅由半导体和金属化层构成的结构中的电阻,因为结构的电阻由在金属 - 半导体界面处形成的肖特基势垒的电阻支配。 例如,在金属化之前,对氧化物掩模的硅晶片进行氩离子轰击以进行表面清洁和活化,随后进行氧离子轰击足以形成厚度依次为的均匀的氧化硅层 约20埃 随后的金属化在具有1.0欧姆 - 厘米电阻率的硅区域上产生约5×10 -7欧姆 - 厘米2的特定接触电阻,而无需先前的接触扩散或随后的金属 - 半导体退火。

    Method of making optically fused semiconductor powder for solar cells
    2.
    发明授权
    Method of making optically fused semiconductor powder for solar cells 失效
    制造太阳能电池用光熔半导体粉末的方法

    公开(公告)号:US5556791A

    公开(公告)日:1996-09-17

    申请号:US368229

    申请日:1995-01-03

    摘要: A method and apparatus for forming semiconductor particles (42) for solar cells using an optical furnace (30). Uniform mass piles (26) of powered semiconductor feedstock are almost instantaneously optically fused to define high purity semiconductor particles without oxidation. The high intensity optical energy is directed and focused to the semiconductor feedstock piles (26) advanced by a conveyer medium (16) thereunder. The semiconductor feedstock piles (26) are at least partially melted and fused to form a single semiconductor particle (42) which can be later separated from a refractory layer (18) by a separator (50), preferably comprised of silica. The apparatus (10) and process is automated, providing a high throughput to produce uniform mass, high quality spheres for realizing high efficiency solar cells. The apparatus is energy efficient, whereby process parameters can be easily and quickly established.

    摘要翻译: 一种用于使用光学炉(30)形成用于太阳能电池的半导体颗粒(42)的方法和装置。 动力半导体原料的均匀质量堆(26)几乎被瞬时光学融合,以限定高纯度半导体颗粒而没有氧化。 高强度光能被引导并聚焦到由其下方的输送介质(16)前进的半导体原料桩(26)。 半导体原料桩(26)至少部分地熔化并熔化以形成单个半导体颗粒(42),其可以稍后通过隔板(50)从耐火层(18)分离,优选由二氧化硅组成。 设备(10)和过程是自动化的,提供高产量以产生用于实现高效率太阳能电池的均匀质量,高质量的球体。 该装置是高能效的,由此可以容易且快速地建立工艺参数。

    Device for measuring pressures and forces
    3.
    发明授权
    Device for measuring pressures and forces 失效
    用于测量压力和力的装置

    公开(公告)号:US5144841A

    公开(公告)日:1992-09-08

    申请号:US695623

    申请日:1991-05-03

    IPC分类号: G01L9/00

    CPC分类号: G01L9/0002 G01L9/0001

    摘要: The invention relates to a device for measuring pressures or forces, comprising a pressure or force sensor in the form of a piezoelectric or piezoresistive pressure or force transducer having at least one electric cable connected thereto, and an incompressible elastomer mass which transmits the pressure or force to be measured to the transducer.

    摘要翻译: 本发明涉及一种用于测量压力或力的装置,包括压电或压阻式压力或力传感器形式的压力传感器或压力传感器,该压力传感器或压阻式压力传感器具有连接至少一根电缆的不锈钢弹性体, 被测量到传感器。

    Apparatus for making optically fused semiconductor powder for solar cells
    4.
    发明授权
    Apparatus for making optically fused semiconductor powder for solar cells 失效
    用于制造太阳能电池的光熔半导体粉末的装置

    公开(公告)号:US5614020A

    公开(公告)日:1997-03-25

    申请号:US637194

    申请日:1996-04-08

    摘要: A method and apparatus for forming semiconductor particles (42) for solar cells using an optical furnace (30). Uniform mass piles (26) of powered semiconductor feedstock are almost instantaneously optically fused to define high purity semiconductor particles without oxidation. The high intensity optical energy is directed and focused to the semiconductor feedstock piles (26) advanced by a conveyer medium (16) thereunder. The semiconductor feedstock piles (26) are at least partially melted and fused to form a single semiconductor particle (42) which can be later separated from a refractory layer (18) by a separator (50), preferably comprised of silica. The apparatus (10) and process is automated, providing a high throughput to produce uniform mass, high quality spheres for realizing high efficiency solar cells. The apparatus is energy efficient, whereby process parameters can be easily and quickly established.

    摘要翻译: 一种用于使用光学炉(30)形成用于太阳能电池的半导体颗粒(42)的方法和装置。 动力半导体原料的均匀质量堆(26)几乎被瞬时光学融合,以限定高纯度半导体颗粒而没有氧化。 高强度光能被引导并聚焦到由其下方的输送介质(16)前进的半导体原料桩(26)。 半导体原料桩(26)至少部分地熔化并熔化以形成单个半导体颗粒(42),其可以稍后通过隔板(50)从耐火层(18)分离,优选由二氧化硅组成。 设备(10)和过程是自动化的,提供高产量以产生用于实现高效率太阳能电池的均匀质量,高质量的球体。 该装置是高能效的,由此可以容易且快速地建立工艺参数。

    Method of making a pressure transducer apparatus
    5.
    发明授权
    Method of making a pressure transducer apparatus 失效
    制造压力传感器装置的方法

    公开(公告)号:US5525280A

    公开(公告)日:1996-06-11

    申请号:US224219

    申请日:1994-04-07

    CPC分类号: G01L9/0075 Y10T29/435

    摘要: A monolithic capacitive pressure transducer is shown composed of ceramic material having a closed cavity formed near a surface thereof and having capacitor plates formed on two opposed surfaces defining the cavity. Vias are formed extending from the capacitor plates to permit electrical connection therewith. The transducer is made by separately forming under pressure a diaphragm and a base having a recess in the top surface using ceramic powder coated with an organic binder. A metal layer is deposited on the two pieces and the pieces are then joined together to form a single unit. A spacer may be inserted in the recess to ensure that a predetermined gap is maintained between the two parts during the joining operation. The parts are then debinderized by heating in air to a first temperature level to allow the binder organics, as well as the spacer organics if a spacer is employed, to be vaporized and/or decomposed and removed through the open pores of the diaphragm and base. The unit is then brought up to a sintering temperature in a reducing atmosphere to change it into a monolithic body and to convert the metallized layer into a conductive layer bonded to the ceramic.

    摘要翻译: 单片电容式压力传感器由陶瓷材料组成,陶瓷材料在其表面附近形成有封闭的空腔,并且在形成空腔的两个相对的表面上形成电容器板。 形成从电容器板延伸以允许与其电连接的通孔。 传感器通过在压力下分开地形成隔膜和使用涂覆有有机粘合剂的陶瓷粉末在顶面中具有凹部的基底来制造。 金属层沉积在两片上,然后将片连接在一起以形成单个单元。 间隔件可以插入凹部中,以确保在接合操作期间在两个部件之间保持预定的间隙。 然后通过在空气中加热至第一温度水平使部分脱粘,以允许粘合剂有机物以及间隔器有机物(如果使用间隔物)通过隔膜和基底的开孔气化和/或分解和除去 。 然后将该单元升温至还原气氛中的烧结温度以将其改变成单体,并将金属化层转化为与陶瓷结合的导电层。

    Electrical connections for a piezoelectric pressure transmitter for an
internal combustion engine
    6.
    发明授权
    Electrical connections for a piezoelectric pressure transmitter for an internal combustion engine 失效
    用于内燃机的压电式压力变送器的电气连接

    公开(公告)号:US4570097A

    公开(公告)日:1986-02-11

    申请号:US665490

    申请日:1984-10-26

    IPC分类号: G01L9/00 H01L41/08

    CPC分类号: G01L9/008

    摘要: A cylinder pressure transmitter has means mounting piezoelectric means to provide an electrical signal corresponding to the pressure of a cylinder of an internal combustion engine and has electronic means on the mounting means to amplify the signal for transmission to computer control means for regulating engine operation to improve performance. The electronic means are mounted on an insulating substrate which is secured to a rigid support in a housing. Contact means, guide means, and locating means provided on the housing and on the mounting means cooperate to mount the housing on the mounting means to provide reliable interconnection between the electronic and piezoelectric means and to retain the interconnection even when subjected to engine vibrations.

    摘要翻译: 气缸压力变送器具有安装压电装置的装置,以提供对应于内燃机的气缸的压力的电信号,并且在安装装置上具有电子装置以放大信号以传输到计算机控制装置以调节发动机运转以改善 性能。 电子装置安装在绝缘基板上,绝缘基板固定到壳体中的刚性支撑件。 接触装置,引导装置和设置在壳体上和安装装置上的定位装置配合以将壳体安装在安装装置上,以在电子和压电装置之间提供可靠的互连,并且即使在受到发动机振动时也保持互连。

    Fiber optic chemical sensor
    7.
    发明授权
    Fiber optic chemical sensor 失效
    光纤化学传感器

    公开(公告)号:US5315672A

    公开(公告)日:1994-05-24

    申请号:US764257

    申请日:1991-09-23

    CPC分类号: G01N21/7703 G01N2201/0873

    摘要: A fiber optic sensor for detecting the presence or concentration of particular chemical or biological species in a zone to be monitored has light-emitting and detecting elements such as a gallium arsenide light-emitting diode and a Schottky diode light detector provided in a semiconductor body, and has an optical fiber formed in situ on a surface of the body to conduct light from the light-emitting diode to the detector. The fiber has a long light-transmitting core of a material such as silicon dioxide deposited on a semiconductor body surface and defined by photolithographic techniques and has a cladding deposited over and around the core of a material of relatively lower refractive index than the core. The cladding material reacts when contacted by the particular chemical or biological species to produce measurable changes in transmission of light through the fiber so that the detector provides an electrical signal representative of the presence or concentration of the species.

    摘要翻译: 用于检测待监测区域中特定化学或生物物质的存在或浓度的光纤传感器具有发光和检测元件,例如设置在半导体主体中的砷化镓发光二极管和肖特基二极管光检测器, 并且在本体的表面上具有原位形成的光纤,以将来自发光二极管的光导入检测器。 光纤具有长的透光芯,例如沉积在半导体主体表面上的二氧化硅的材料,并通过光刻技术限定,并且具有沉积在比芯更低折射率的材料的芯上和周围的包层。 包层材料在被特定的化学或生物物质接触时反应,以产生通过纤维的光的透射变化,使得检测器提供代表物种的存在或浓度的电信号。

    Silicon refinery
    8.
    发明授权
    Silicon refinery 失效
    硅精炼厂

    公开(公告)号:US4213937A

    公开(公告)日:1980-07-22

    申请号:US726018

    申请日:1976-09-22

    IPC分类号: B01J8/18 C01B33/02 C01B33/00

    摘要: A balanced, closed cycle silicon refinery system has been developed for producing electronic grade silicon from industrial grade silicon. Impurities comprising approximately 1% of the industrial grade silicon are removed in the refinery system to produce the purified silicon, while only a relatively small percentage of make-up chemicals are added to the system. In the refinery, hydrogen chloride is reacted with the impure silicon in a halide reactor to provide trichlorosilane and silicon tetrachloride and hydrogen. The trichlorosilane and/or silicon tetrachloride are passed through purification means, and then reacted with the hydrogen from the halide reactor in a fluidized bed reactor to produce the purified silicon and an effluent comprised of unreacted trichlorosilane, silicon tetrachloride, hydrogen, and the by-product hydrogen chloride. These materials are passed through a separator and the trichlorosilane and silicon tetrachloride and hydrogen are returned to the silicon reactor while the hydrogen chloride is returned to the halide reactor to be reacted with additional industrial grade silicon.

    摘要翻译: 已经开发了一种平衡的封闭循环硅精炼系统,用于从工业级硅生产电子级硅。 包含大约1%的工业级硅的杂质在炼油系统中被除去以产生纯化的硅,而仅将相对小百分比的化妆品添加到系统中。 在炼油厂,氯化氢与卤化物反应器中的不纯硅反应,得到三氯硅烷和四氯化硅和氢气。 三氯硅烷和/或四氯化硅通过纯化装置,然后在流化床反应器中与来自卤化物反应器的氢气反应,以产生纯化的硅和由未反应的三氯硅烷,四氯化硅,氢气和副产物组成的流出物, 产物氯化氢。 将这些材料通过分离器,并将三氯硅烷和四氯化硅和氢气返回到硅反应器,同时氯化氢返回到卤化物反应器以与另外的工业级硅反应。

    Silicon seed production process
    9.
    发明授权
    Silicon seed production process 失效
    硅种子生产过程

    公开(公告)号:US4207360A

    公开(公告)日:1980-06-10

    申请号:US627635

    申请日:1975-10-31

    IPC分类号: C01B33/02 B05D7/00 C23C11/06

    CPC分类号: C01B33/02 Y10S117/901

    摘要: In the production of elemental silicon by chemical vapor deposition on a particulate seed bed, the continuous generation of seed particles for use or recycle is achieved by the maintenance of a separate, subsidiary reaction zone at a temperature which favors breakage of product particles; while a higher temperature, favorable for deposition, is maintained in the principal reaction zone. The separate reaction zones may be established in separate reactors, or in a single reactor.

    摘要翻译: 在通过化学气相沉积在颗粒状种子床上生产元素硅时,连续生成用于或循环的种子颗粒通过在有利于产品颗粒破坏的温度下维持单独的辅助反应区来实现; 而主反应区保持较高的温度,有利于沉积。 单独的反应区可以在单独的反应器中或在单个反应器中建立。

    Test socket for detachable IC chip
    10.
    发明授权
    Test socket for detachable IC chip 失效
    用于可拆卸IC芯片的测试插座

    公开(公告)号:US5807104A

    公开(公告)日:1998-09-15

    申请号:US592146

    申请日:1996-01-26

    摘要: A socket with a main socket body 10 for use in a burn-in test of a bare chip 80 with a large number of contact connectors BP is provided with a positioning plate 42 in the top of the socket body 10. This positioning plate has a plurality of through holes 42c with contact members 48 slidingly contained therein. The through holes 42c and contact members 48 are aligned in one to one relationship to contact connections on the bare chip on one side of positioning plate 42 and a plurality of electroconductive film contacts 50 on the other side of the positioning plate 42. The film contacts are movably supported in the socket. Additionally, the film contacts 50 are electrically connected in a one-to-one relationship to socket contact 56 contained in the socket for providing electrical connection between bare chip 80 and socket 10.

    摘要翻译: 用于具有大量接触连接器BP的裸芯片80的老化测试的具有主插座体10的插座在插座主体10的顶部设置有定位板42,该定位板具有 多个通孔42c,其中滑动地容纳有接触构件48。 通孔42c和接触构件48以定位板42的一侧上的裸芯片上的定位板42的另一侧上的多个导电膜触点50以一对一的关系对准。 可移动地支撑在插座中。 此外,胶片触点50以一对一的关系电连接到插座中的插座触头56,以提供裸芯片80和插座10之间的电连接。