摘要:
Ohmic contacts to semiconductor surfaces are fabricated by a process which includes the formation of an adherent, uniform insulating film at the interface between the semiconductor surface and the metallization layer. The insulating film contains stationary charges of sign opposite to the sign of the conductivity of the semiconductor whereby image charges are introduced in the semiconductor. These image charges are located near the semiconductor surface and are of sufficient density to induce the formation of an accumulation layer. The minimum charge density required in the insulating layer is determined by the density of the surface states, Q.sub.ss, in the semiconductor. Minimum Q.sub.ss for silicon is about 5 .times. 10.sup.10 charges/cm.sup.2. The structure thus formed will present an electrical resistance resulting almost solely from the tunneling resistance of the insulating layer. Such a resistance is far smaller than the resistance one would observe in a structure consisting only of the semiconductor and metallization layer because the resistance of the structure is dominated by the resistance of the Schottky barrier formed at the metal-semiconductor interface. For example, just prior to metallization, an oxide-masked silicon wafer is subjected to argon ion bombardment for surface cleaning and activation, followed by oxygen ion bombardment for a time sufficient to form a uniform layer of silicon oxide having a thickness on the order of about 20 Angstroms. Subsequent metallization produces a specific contact resistance of about 5 .times. 10.sup.-.sup.7 ohm-cm.sup.2 on a silicon region having a resistivity of 1.0 ohm-cm, without previous contact diffusion or subsequent metal-semiconductor annealing.
摘要:
A method and apparatus for forming semiconductor particles (42) for solar cells using an optical furnace (30). Uniform mass piles (26) of powered semiconductor feedstock are almost instantaneously optically fused to define high purity semiconductor particles without oxidation. The high intensity optical energy is directed and focused to the semiconductor feedstock piles (26) advanced by a conveyer medium (16) thereunder. The semiconductor feedstock piles (26) are at least partially melted and fused to form a single semiconductor particle (42) which can be later separated from a refractory layer (18) by a separator (50), preferably comprised of silica. The apparatus (10) and process is automated, providing a high throughput to produce uniform mass, high quality spheres for realizing high efficiency solar cells. The apparatus is energy efficient, whereby process parameters can be easily and quickly established.
摘要:
The invention relates to a device for measuring pressures or forces, comprising a pressure or force sensor in the form of a piezoelectric or piezoresistive pressure or force transducer having at least one electric cable connected thereto, and an incompressible elastomer mass which transmits the pressure or force to be measured to the transducer.
摘要:
A method and apparatus for forming semiconductor particles (42) for solar cells using an optical furnace (30). Uniform mass piles (26) of powered semiconductor feedstock are almost instantaneously optically fused to define high purity semiconductor particles without oxidation. The high intensity optical energy is directed and focused to the semiconductor feedstock piles (26) advanced by a conveyer medium (16) thereunder. The semiconductor feedstock piles (26) are at least partially melted and fused to form a single semiconductor particle (42) which can be later separated from a refractory layer (18) by a separator (50), preferably comprised of silica. The apparatus (10) and process is automated, providing a high throughput to produce uniform mass, high quality spheres for realizing high efficiency solar cells. The apparatus is energy efficient, whereby process parameters can be easily and quickly established.
摘要:
A monolithic capacitive pressure transducer is shown composed of ceramic material having a closed cavity formed near a surface thereof and having capacitor plates formed on two opposed surfaces defining the cavity. Vias are formed extending from the capacitor plates to permit electrical connection therewith. The transducer is made by separately forming under pressure a diaphragm and a base having a recess in the top surface using ceramic powder coated with an organic binder. A metal layer is deposited on the two pieces and the pieces are then joined together to form a single unit. A spacer may be inserted in the recess to ensure that a predetermined gap is maintained between the two parts during the joining operation. The parts are then debinderized by heating in air to a first temperature level to allow the binder organics, as well as the spacer organics if a spacer is employed, to be vaporized and/or decomposed and removed through the open pores of the diaphragm and base. The unit is then brought up to a sintering temperature in a reducing atmosphere to change it into a monolithic body and to convert the metallized layer into a conductive layer bonded to the ceramic.
摘要:
A cylinder pressure transmitter has means mounting piezoelectric means to provide an electrical signal corresponding to the pressure of a cylinder of an internal combustion engine and has electronic means on the mounting means to amplify the signal for transmission to computer control means for regulating engine operation to improve performance. The electronic means are mounted on an insulating substrate which is secured to a rigid support in a housing. Contact means, guide means, and locating means provided on the housing and on the mounting means cooperate to mount the housing on the mounting means to provide reliable interconnection between the electronic and piezoelectric means and to retain the interconnection even when subjected to engine vibrations.
摘要:
A fiber optic sensor for detecting the presence or concentration of particular chemical or biological species in a zone to be monitored has light-emitting and detecting elements such as a gallium arsenide light-emitting diode and a Schottky diode light detector provided in a semiconductor body, and has an optical fiber formed in situ on a surface of the body to conduct light from the light-emitting diode to the detector. The fiber has a long light-transmitting core of a material such as silicon dioxide deposited on a semiconductor body surface and defined by photolithographic techniques and has a cladding deposited over and around the core of a material of relatively lower refractive index than the core. The cladding material reacts when contacted by the particular chemical or biological species to produce measurable changes in transmission of light through the fiber so that the detector provides an electrical signal representative of the presence or concentration of the species.
摘要:
A balanced, closed cycle silicon refinery system has been developed for producing electronic grade silicon from industrial grade silicon. Impurities comprising approximately 1% of the industrial grade silicon are removed in the refinery system to produce the purified silicon, while only a relatively small percentage of make-up chemicals are added to the system. In the refinery, hydrogen chloride is reacted with the impure silicon in a halide reactor to provide trichlorosilane and silicon tetrachloride and hydrogen. The trichlorosilane and/or silicon tetrachloride are passed through purification means, and then reacted with the hydrogen from the halide reactor in a fluidized bed reactor to produce the purified silicon and an effluent comprised of unreacted trichlorosilane, silicon tetrachloride, hydrogen, and the by-product hydrogen chloride. These materials are passed through a separator and the trichlorosilane and silicon tetrachloride and hydrogen are returned to the silicon reactor while the hydrogen chloride is returned to the halide reactor to be reacted with additional industrial grade silicon.
摘要:
In the production of elemental silicon by chemical vapor deposition on a particulate seed bed, the continuous generation of seed particles for use or recycle is achieved by the maintenance of a separate, subsidiary reaction zone at a temperature which favors breakage of product particles; while a higher temperature, favorable for deposition, is maintained in the principal reaction zone. The separate reaction zones may be established in separate reactors, or in a single reactor.
摘要:
A socket with a main socket body 10 for use in a burn-in test of a bare chip 80 with a large number of contact connectors BP is provided with a positioning plate 42 in the top of the socket body 10. This positioning plate has a plurality of through holes 42c with contact members 48 slidingly contained therein. The through holes 42c and contact members 48 are aligned in one to one relationship to contact connections on the bare chip on one side of positioning plate 42 and a plurality of electroconductive film contacts 50 on the other side of the positioning plate 42. The film contacts are movably supported in the socket. Additionally, the film contacts 50 are electrically connected in a one-to-one relationship to socket contact 56 contained in the socket for providing electrical connection between bare chip 80 and socket 10.