摘要:
According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element.
摘要:
There is provided a semiconductor light emitting device including: a semiconductor light emitting laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed therebetween; a first electrode having at least one bonding pad formed on a portion of an upper surface of the first conductive semiconductor layer; a second electrode having an ohmic contact layer formed on the second conductive semiconductor layer; and a current blocking layer between the second conductive semiconductor layer and the ohmic contact layer having a plurality of patterns formed thereon, the plurality of patterns being arrayed such that intervals between patterns adjacent to a region overlapped with the bonding pad are smaller an interval between patterns of another regions.