Semiconductor light emitting device having current blocking layer
    2.
    发明授权
    Semiconductor light emitting device having current blocking layer 有权
    具有电流阻挡层的半导体发光器件

    公开(公告)号:US08785962B2

    公开(公告)日:2014-07-22

    申请号:US13481463

    申请日:2012-05-25

    申请人: Wan Ho Lee

    发明人: Wan Ho Lee

    IPC分类号: H01L33/00

    CPC分类号: H01L33/387 H01L33/14

    摘要: There is provided a semiconductor light emitting device including: a semiconductor light emitting laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed therebetween; a first electrode having at least one bonding pad formed on a portion of an upper surface of the first conductive semiconductor layer; a second electrode having an ohmic contact layer formed on the second conductive semiconductor layer; and a current blocking layer between the second conductive semiconductor layer and the ohmic contact layer having a plurality of patterns formed thereon, the plurality of patterns being arrayed such that intervals between patterns adjacent to a region overlapped with the bonding pad are smaller an interval between patterns of another regions.

    摘要翻译: 提供一种半导体发光器件,包括:包含第一导电半导体层,第二导电半导体层和插入其间的有源层的半导体发光层叠体; 第一电极,其具有形成在所述第一导电半导体层的上表面的一部分上的至少一个焊盘; 具有形成在所述第二导电半导体层上的欧姆接触层的第二电极; 以及在第二导电半导体层和欧姆接触层之间的电流阻挡层,其上形成有多个图案,所述多个图案被排列成使得与与焊盘重叠的区域相邻的图案之间的间隔小于图案之间的间隔 的另一个地区。