摘要:
A light-emitting device comprises a substrate; a light-emitting layer formed on the substrate; a transparent electrode layer formed on the light-emitting layer, the transparent electrode layer having a curved surface; and a reflective layer formed on and along the curved surface of the transparent electrode layer such that the curved surface of the transparent electrode layer is transferred so as to reflect the light generated from the light-emitting layer toward the light-emitting layer.
摘要:
A light-emitting device comprises a substrate; a light-emitting layer formed on the substrate; a transparent electrode layer formed on the light-emitting layer, the transparent electrode layer having a curved surface; and a reflective layer formed on and along the curved surface of the transparent electrode layer such that the curved surface of the transparent electrode layer is transferred so as to reflect the light generated from the light-emitting layer toward the light-emitting layer.
摘要:
A flip-chip type light-emitting device and manufacturing method thereof provides a curved surface formed on the transparent electrode layer and a reflective layer transferred with the curved surface of the transparent electrode layer is additionally formed on the transparent electrode layer, so that the light generated from the active layer is incident to the reflective layer through the p-type nitride layer and the transparent electrode layer, and then is reflected from the curved surface of the reflective layer so as to exhibit an effect of extracting a larger amount of light in a vertical direction as compared to the conventional light-emitting device.
摘要:
According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element.
摘要:
According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element.
摘要:
There is provided a semiconductor light emitting device including: a semiconductor light emitting laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed therebetween; a first electrode having at least one bonding pad formed on a portion of an upper surface of the first conductive semiconductor layer; a second electrode having an ohmic contact layer formed on the second conductive semiconductor layer; and a current blocking layer between the second conductive semiconductor layer and the ohmic contact layer having a plurality of patterns formed thereon, the plurality of patterns being arrayed such that intervals between patterns adjacent to a region overlapped with the bonding pad are smaller an interval between patterns of another regions.
摘要:
There is provided a semiconductor light emitting device including: a semiconductor light emitting laminate including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed therebetween; a first electrode having at least one bonding pad formed on a portion of an upper surface of the first conductive semiconductor layer; a second electrode having an ohmic contact layer formed on the second conductive semiconductor layer; and a current blocking layer between the second conductive semiconductor layer and the ohmic contact layer having a plurality of patterns formed thereon, the plurality of patterns being arrayed such that intervals between patterns adjacent to a region overlapped with the bonding pad are smaller an interval between patterns of another regions.
摘要:
A sealed blind for a double window is provided. A double window is installed in a frame formed by upper, lower and side frames in which an inner glass plate and an outer glass plate are installed spaced apart by a predetermined interval. A blind is installed inside the double window. An elevating shaft is connected to the blind and is configured to wind and unwind the blind. A sealed rotating unit is configured to rotate the elevating shaft. A first side of the rotating unit is installed in the elevating shaft and a second side of the rotating unit is disposed at an outer side of the side frame of the double window, such that outside air and dust are not introduced. An elevating wire is wound around the rotating unit and is configured to operate the rotating unit.
摘要:
A flip-chip type light-emitting device and manufacturing method thereof provides a curved surface formed on the transparent electrode layer and a reflective layer transferred with the curved surface of the transparent electrode layer is additionally formed on the transparent electrode layer, so that the light generated from the active layer is incident to the reflective layer through the p-type nitride layer and the transparent electrode layer, and then is reflected from the curved surface of the reflective layer so as to exhibit an effect of extracting a larger amount of light in a vertical direction as compared to the conventional light-emitting device.