公开(公告)号：US06917109B2

公开(公告)日：2005-07-12

申请号：US10295062

申请日：2002-11-15

申请人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

发明人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/48

CPC分类号： H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： An air gap structure and formation method for substantially reducing the undesired capacitance between adjacent interconnects, metal lines or other features in an integrated circuit device is disclosed. The air gap extends above, and may also additionally extend below, the interconnects desired to be isolated thus minimizing fringing fields between the lines. The integrated air gap structure and formation method can be utilized in conjunction with either damascene or conventional integrated circuit metallization schemes. Also, multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels while always ensuring that physical dielectric layer support is provided to the device structure underlying the interconnects.

摘要翻译： 公开了一种气隙结构和形成方法，用于显着减少集成电路器件中的相邻互连，金属线或其他特征之间的不需要的电容。 空气间隙在期望被隔离的互连之上延伸并且还可以另外延伸，从而最小化线之间的边缘场。 集成气隙结构和形成方法可以与镶嵌或常规集成电路金属化方案结合使用。 此外，可以制造多个级别的集成气隙结构以适应多个金属水平，同时始终确保将物理介电层支撑件提供给互连下面的器件结构。

公开(公告)号：US20070076339A1

公开(公告)日：2007-04-05

申请号：US11561790

申请日：2006-11-20

申请人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

发明人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

IPC分类号： H02H9/00

CPC分类号： H01L21/7682 ,  H01L21/76807

摘要： An air gap structure substantially reduces undesired capacitance between adjacent interconnects, metal lines or other features in an integrated circuit device. The air gap extends above, and may also additionally extend below, the interconnects desired to be isolated thus minimizing fringing fields between the lines. The integrated air gap structure can be utilized in conjunction with a tungsten plug process. Also, multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels while always ensuring that physical dielectric layer support is provided to the device structure underlying the interconnects.

摘要翻译： 气隙结构基本上减少了集成电路器件中相邻互连，金属线或其他特征之间的不需要的电容。 空气间隙在期望被隔离的互连之上延伸并且还可以另外延伸，从而最小化线之间的边缘场。 集成气隙结构可以与钨丝塞过程一起使用。 此外，可以制造多个级别的集成气隙结构以适应多个金属水平，同时始终确保将物理介电层支撑件提供给互连下面的器件结构。

公开(公告)号：US07253095B2

公开(公告)日：2007-08-07

申请号：US11179840

申请日：2005-07-11

申请人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

发明人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

IPC分类号： H01L21/4763

CPC分类号： H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： An air gap structure and formation method for substantially reducing the undesired capacitance between adjacent interconnects, metal lines or other features in an integrated circuit device is disclosed. The air gap extends above, and may also additionally extend below, the interconnects desired to be isolated thus minimizing fringing fields between the lines. The integrated air gap structure and formation method can be utilized in conjunction with either damascene or conventional integrated circuit metallization schemes. Also, multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels while always ensuring that physical dielectric layer support is provided to the device structure underlying the interconnects.

摘要翻译： 公开了一种气隙结构和形成方法，用于显着减少集成电路器件中的相邻互连，金属线或其他特征之间的不需要的电容。 空气间隙在期望被隔离的互连之上延伸并且还可以另外延伸，从而最小化线之间的边缘场。 集成气隙结构和形成方法可以与镶嵌或常规集成电路金属化方案结合使用。 此外，可以制造多个级别的集成气隙结构以适应多个金属水平，同时始终确保将物理介电层支撑件提供给互连下面的器件结构。

公开(公告)号：US07449407B2

公开(公告)日：2008-11-11

申请号：US10295719

申请日：2002-11-15

申请人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

发明人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

IPC分类号： H01L21/764 ,  H01L21/768

CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76813 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： An air gap structure and formation method for substantially reducing capacitance in a dual damascene based interconnect structure is disclosed. The air gap extends above, and may also additionally extend below, the damascene interconnects desired to be isolated thus minimizing fringing fields between the lines. Multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels.

摘要翻译： 公开了一种用于在基于双镶嵌的互连结构中显着降低电容的气隙结构和形成方法。 空气间隙在期望被隔离的镶嵌互连件之上延伸并且还可以另外延伸，从而最小化线之间的边缘场。 可以制造多个级别的集成气隙结构以适应多种金属水平。

公开(公告)号：US07138329B2

公开(公告)日：2006-11-21

申请号：US10295080

申请日：2002-11-15

申请人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

发明人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

IPC分类号： H01L21/4763 ,  H01L21/76 ,  H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/7682 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/76843

摘要： An air gap structure and formation method for substantially reducing the undesired capacitance between adjacent interconnects, metal lines or other features in an integrated circuit device is disclosed. The air gap extends above, and may also additionally extend below, the interconnects desired to be isolated thus minimizing fringing fields between the lines. The integrated air gap structure and formation method can be utilized in conjunction with a tungsten plug process. Also, multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels while always ensuring that physical dielectric layer support is provided to the device structure underlying the interconnects.

摘要翻译： 公开了一种气隙结构和形成方法，用于显着减少集成电路器件中的相邻互连，金属线或其他特征之间的不需要的电容。 空气间隙在期望被隔离的互连之上延伸并且还可以另外延伸，从而最小化线之间的边缘场。 集成的气隙结构和形成方法可以与钨丝塞过程结合使用。 此外，可以制造多个级别的集成气隙结构以适应多个金属水平，同时始终确保将物理介电层支撑件提供给互连下面的器件结构。

公开(公告)号：US20050263896A1

公开(公告)日：2005-12-01

申请号：US11179840

申请日：2005-07-11

申请人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

发明人： Water Lur ,  David Lee ,  Kuang-Chih Wang ,  Ming-Sheng Yang

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L29/40

CPC分类号： H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

摘要： An air gap structure and formation method for substantially reducing the undesired capacitance between adjacent interconnects, metal lines or other features in an integrated circuit device is disclosed. The air gap extends above, and may also additionally extend below, the interconnects desired to be isolated thus minimizing fringing fields between the lines. The integrated air gap structure and formation method can be utilized in conjunction with either damascene or conventional integrated circuit metallization schemes. Also, multiple levels of the integrated air gap structure can be fabricated to accommodate multiple metal levels while always ensuring that physical dielectric layer support is provided to the device structure underlying the interconnects.

摘要翻译： 公开了一种气隙结构和形成方法，用于显着减少集成电路器件中的相邻互连，金属线或其他特征之间的不需要的电容。 空气间隙在期望被隔离的互连之上延伸并且还可以另外延伸，从而最小化线之间的边缘场。 集成气隙结构和形成方法可以与镶嵌或常规集成电路金属化方案结合使用。 此外，可以制造多个级别的集成气隙结构以适应多个金属水平，同时始终确保将物理介电层支撑件提供给互连下面的器件结构。

公开(公告)号：US06743721B2

公开(公告)日：2004-06-01

申请号：US10166307

申请日：2002-06-10

申请人： Water Lur ,  David Lee ,  Kuang-Chih Wang

发明人： Water Lur ,  David Lee ,  Kuang-Chih Wang

IPC分类号： H01L2144

CPC分类号： H01L21/67167 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67184 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  Y10T29/41

摘要： A cluster tool and a number of different processes for making a cobalt-silicide material are disclosed. Combinations of alloyed layers of Co—Ti— along with layers of Co— are arranged and heat treated so as to effectuate a silicide reaction. The resulting structures have extremely low resistance, and show little line width dependence, thus making them particularly attractive for use in semiconductor processing. A cluster tool is configured with appropriate sputter targets/heat assemblies to implement many of the needed operations for the silicide reactions, thus resulting in higher savings, productivity, etc.

摘要翻译： 公开了一种用于制造硅化钴材料的簇工具和许多不同的工艺。 Co-Ti合金层与Co层的组合进行排列并进行热处理，以实现硅化物反应。 所得到的结构具有极低的电阻，并且显示出很小的线宽依赖性，因此使它们对于用于半导体处理特别有吸引力。 集群工具配置有适当的溅射靶/热组件以实现硅化物反应的许多所需操作，从而导致更高的节省量，生产率等。

公开(公告)号：US06943110B1

公开(公告)日：2005-09-13

申请号：US10640779

申请日：2003-08-13

申请人： Water Lur ,  David Lee ,  Kuang-Chih Wang

发明人： Water Lur ,  David Lee ,  Kuang-Chih Wang

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/44

CPC分类号： H01L21/67167 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67184 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  Y10T29/41

摘要： A cluster tool and a number of different processes for making a cobalt-silicide material are disclosed. Combinations of alloyed layers of Co—Ti—along with layers of Co—are arranged and heat treated so as to effectuate a silicide reaction. The resulting structures have extremely low resistance, and show little line width dependence, thus making them particularly attractive for use in semiconductor processing. A cluster tool is configured with appropriate sputter targets/heat assemblies to implement many of the needed operations for the silicide reactions, thus resulting in higher savings, productivity, etc.

摘要翻译： 公开了一种用于制造硅化钴材料的簇工具和许多不同的工艺。 配置Co-Ti合金层与Co层的组合，进行热处理，以实现硅化物反应。 所得到的结构具有极低的电阻，并且显示出很小的线宽依赖性，因此使它们对于用于半导体处理特别有吸引力。 集群工具配置有适当的溅射靶/热组件以实现硅化物反应的许多所需操作，从而导致更高的节省量，生产率等。

公开(公告)号：US20050176248A1

公开(公告)日：2005-08-11

申请号：US11102492

申请日：2005-04-08

申请人： Water Lur ,  David Lee ,  Kuang-Chih Wang

发明人： Water Lur ,  David Lee ,  Kuang-Chih Wang

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/67167 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67184 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device that includes cobalt-silicide based contacts is disclosed, as well as a process for making the same. Combinations of alloyed layers of Co—Ti—along with layers of Co—are arranged and heat treated so as to effectuate a silicide reaction on a silicon substrate. The resulting structures have extremely low resistance, and show little line width dependence, thus making them particularly attractive for use in semiconductor devices and processes.

摘要翻译： 公开了包括基于硅化钴的触点的半导体器件及其制造方法。 配置Co-Ti合金层与Co层的组合，进行热处理，以在硅衬底上实现硅化物反应。 所得到的结构具有极低的电阻，并且显示出较小的线宽依赖性，因此使得它们对于用于半导体器件和工艺特别有吸引力。

公开(公告)号：US06878627B1

公开(公告)日：2005-04-12

申请号：US10641232

申请日：2003-08-13

申请人： Water Lur ,  David Lee ,  Kuang-Chih Wang

发明人： Water Lur ,  David Lee ,  Kuang-Chih Wang

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/302 ,  H01L21/44

CPC分类号： H01L21/67167 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67184 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  Y10T29/41

摘要： A semiconductor device that includes cobalt-silicide based contacts is disclosed, as well as a process for making the same. Combinations of alloyed layers of Co—Ti— along with layers of Co— are arranged and heat treated so as to effectuate a silicide reaction on a silicon substrate. The resulting structures have extremely low resistance, and show little line width dependence, thus making them particularly attractive for use in semiconductor devices and processes.

摘要翻译： 公开了包括基于硅化钴的触点的半导体器件及其制造方法。 配置Co-Ti-与Co层的合金层的组合并进行热处理，以在硅衬底上实现硅化物反应。 所得到的结构具有极低的电阻，并且显示出较小的线宽依赖性，因此使得它们对于用于半导体器件和工艺特别有吸引力。