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公开(公告)号：US07038772B2
公开(公告)日：2006-05-02
申请号：US10613634
申请日：2003-07-03
申请人： Wayne Chen , Andrew Zeng , Mustafa Akbulut
发明人： Wayne Chen , Andrew Zeng , Mustafa Akbulut
IPC分类号： G01N21/00
CPC分类号： H01L22/26 , G01N21/8851 , G01N21/9501 , G01N21/9506 , H01L22/12
摘要： Two or more defect maps may be provided for the same sample surface at different detection sensitivities and/or processing thresholds. The defect maps may then be compared for better characterization of the anomalies as scratches, area anomalies or point anomalies. This can be done without concealing the more significant and larger size defects amongst numerous small and immaterial defects. One or more defect maps can be used to report the anomalies with classified information; the results from this map(s) can be used to monitor the process conditions to obtain better yield.
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公开(公告)号：US07315365B2
公开(公告)日：2008-01-01
申请号：US11411529
申请日：2006-04-25
申请人： Wayne Chen , Andrew Zeng , Mustafa Akbulut
发明人： Wayne Chen , Andrew Zeng , Mustafa Akbulut
IPC分类号： G01N21/00
CPC分类号： H01L22/26 , G01N21/8851 , G01N21/9501 , G01N21/9506 , H01L22/12
摘要： Two or more defect maps may be provided for the same sample surface at different detection sensitivities and/or processing thresholds. The defect maps may then be compared for better characterization of the anomalies as scratches, area anomalies or point anomalies. This can be done without concealing the more significant and larger size defects amongst numerous small and immaterial defects. One or more defect maps can be used to report the anomalies with classified information; the results from this map(s) can be used to monitor the process conditions to obtain better yield.
摘要翻译： 可以在不同的检测灵敏度和/或处理阈值下为同一样品表面提供两个或更多个缺陷图。 然后可以比较缺陷图以更好地表征异常，如划痕，区域异常或点异常。 这可以在没有隐藏更多重要和更大尺寸的缺陷的许多小和非实质性缺陷之间完成。 一个或多个缺陷图可以用来报告具有分类信息的异常; 该图的结果可用于监测工艺条件以获得更好的产量。
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公开(公告)号：US20060192951A1
公开(公告)日：2006-08-31
申请号：US11411529
申请日：2006-04-25
申请人： Wayne Chen , Andrew Zeng , Mustafa Akbulut
发明人： Wayne Chen , Andrew Zeng , Mustafa Akbulut
IPC分类号： G01N21/88
CPC分类号： H01L22/26 , G01N21/8851 , G01N21/9501 , G01N21/9506 , H01L22/12
摘要： Two or more defect maps may be provided for the same sample surface at different detection sensitivities and/or processing thresholds. The defect maps may then be compared for better characterization of the anomalies as scratches, area anomalies or point anomalies. This can be done without concealing the more significant and larger size defects amongst numerous small and immaterial defects. One or more defect maps can be used to report the anomalies with classified information; the results from this map(s) can be used to monitor the process conditions to obtain better yield.
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公开(公告)号：US07016031B2
公开(公告)日：2006-03-21
申请号：US10791026
申请日：2004-03-01
申请人： Wayne Chen , Andrew Zeng , Mustafa Akbulut
发明人： Wayne Chen , Andrew Zeng , Mustafa Akbulut
IPC分类号： G01N21/00
CPC分类号： H01L22/26 , G01N21/8851 , G01N21/9501 , G01N21/9506 , H01L22/12
摘要： Two or more defect maps may be provided for the same sample surface at different detection sensitivities and/or processing thresholds. The defect maps may then be compared for better characterization of the anomalies as scratches, area anomalies or point anomalies. This can be done without concealing the more significant and larger size defects amongst numerous small and immaterial defects. One or more defect maps can be used to report the anomalies with classified information; the results from this map(s) can be used to monitor the process conditions to obtain better yield.
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公开(公告)号：US06590645B1
公开(公告)日：2003-07-08
申请号：US09566352
申请日：2000-05-04
申请人： Wayne Chen , Andrew Zeng , Mustafa Akbulut
发明人： Wayne Chen , Andrew Zeng , Mustafa Akbulut
IPC分类号： G01N2100
CPC分类号： H01L22/26 , G01N21/8851 , G01N21/9501 , G01N21/9506 , H01L22/12
摘要： Two or more defect maps may be provided for the same sample surface at different detection sensitivities and/or processing thresholds. The defect maps may then be compared for better characterization of the anomalies as scratches, area anomalies or point anomalies. This can be done without concealing the more significant and larger size defects amongst numerous small and immaterial defects. One or more defect maps can be used to report the anomalies with classified information; the results from this map(s) can be used to monitor the process conditions to obtain better yield.
摘要翻译： 可以在不同的检测灵敏度和/或处理阈值下为同一样品表面提供两个或更多个缺陷图。 然后可以比较缺陷图以更好地表征异常，如划痕，区域异常或点异常。 这可以在没有隐藏更多重要和更大尺寸的缺陷的许多小和非实质性缺陷之间完成。 一个或多个缺陷图可以用来报告具有分类信息的异常; 该图的结果可用于监测工艺条件以获得更好的产量。
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6.发明申请METHODS AND SYSTEMS FOR IMPROVED LOCALIZED FEATURE QUANTIFICATION IN SURFACE METROLOGY TOOLS 有权用于改进表面计量工具中的本地化特征量化的方法和系统公开(公告)号：US20120177282A1
公开(公告)日：2012-07-12
申请号：US12986176
申请日：2011-01-07
申请人： Haiguang Chen , Jaydeep Sinha , Shouhong Tang , John Hager , Andrew Zeng , Sergey Kamensky
发明人： Haiguang Chen , Jaydeep Sinha , Shouhong Tang , John Hager , Andrew Zeng , Sergey Kamensky
IPC分类号： G06K9/00
CPC分类号： G06T5/002 , G06T5/20 , G06T7/0004 , G06T2207/30148
摘要： A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. A method for filtering data from measurements of localized features on wafers is disclosed. This method includes an algorithm designed to adjust the filtering behavior according to the statistics of extreme data samples.A method for utilizing the 2D window and the data filtering to yield a more robust and more accurate Localized Feature quantification methodology is disclosed.
摘要翻译： 公开了一种能够更精确地测量晶片上局部特征的方法。 该方法包括：a）执行高阶表面拟合以更有效地去除低频形状分量，并且还可以减少通常从滤波观察到的可能的信号衰减; b）从表面拟合处理阶段构造和应用适当的二维LFM窗口到残余图像，以有效地减少区域边界处的残余伪像; c）使用伪影图像计算该区域的度量以获得更准确和可靠的测量; 以及d）使用从前面和背面数据获得的基于站点的度量来量化感兴趣的特征。 公开了一种用于从晶片上的局部特征的测量中滤出数据的方法。 该方法包括根据极端数据样本统计来调整过滤行为的算法。 公开了一种利用2D窗口和数据过滤产生更强大和更准确的局部特征量化方法的方法。
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公开(公告)号：US20050018181A1
公开(公告)日：2005-01-27
申请号：US10919600
申请日：2004-08-16
CPC分类号： G01N21/956 , G01N21/21 , G01N21/9501
摘要： Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so- that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles. Intensity of scattering is measured when the surface is illuminated sequentially by S- and P-polarized radiation and compared to distinguish between micro-scratches and particles. Representative films may be measured using profilometers or scanning probe microscopes to determine their roughness and by the above-described instruments to determine haze in order to build a database. Surface roughness of unknown films may then be determined by measuring haze values and from the database.
摘要翻译： 来自样品表面的散射辐射通过收集器收集，收集器围绕垂直于表面的线基本上对称地收集辐射。 收集的辐射被引导到不同方位角的通道，以便保持与线周围收集的散射辐射的相对方位位置有关的信息。 所收集的辐射被转换成代表围绕线路以不同方位角散射的辐射的各个信号。 异常的存在和/或特征由信号确定。 或者，由集电器收集的辐射可以通过具有与预期图案散射的角度间隔相关的角度的环形间隙的空间滤光器来过滤。 可以比较从狭窄和宽收集通道获得的信号，以区分微划痕和微粒。 可以从其他辐射收集向前散射的辐射，并进行比较以区分微划痕和微粒。 当通过S和P偏振辐射依次照射表面时，测量散射强度并进行比较以区分微划痕和微粒。 可以使用轮廓仪或扫描探针显微镜来测量代表性膜以确定其粗糙度，并且可以通过上述仪器来确定雾度以构建数据库。 然后可以通过测量雾度值和数据库来确定未知膜的表面粗糙度。
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公开(公告)号：US06862096B2
公开(公告)日：2005-03-01
申请号：US10360565
申请日：2003-02-06
CPC分类号： G01N21/956 , G01N21/21 , G01N21/9501
摘要： Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles. Intensity of scattering is measured when the surface is illuminated sequentially by S- and P-polarized radiation and compared to distinguish between micro-scratches and particles. Representative films may be measured using profilometers or scanning probe microscopes to determine their roughness and by the above-described instruments to determine haze in order to build a database. Surface roughness of unknown films may then be determined by measuring haze values and from the database.
摘要翻译： 来自样品表面的散射辐射通过收集器收集，收集器围绕垂直于表面的线基本上对称地收集辐射。 收集的辐射被引导到不同方位角的通道，从而保持与线周围收集的散射辐射的相对方位位置有关的信息。 所收集的辐射被转换成代表围绕线路以不同方位角散射的辐射的相应信号。 异常的存在和/或特征由信号确定。 或者，由集电器收集的辐射可以通过具有与预期图案散射的角度间隔相关的角度的环形间隙的空间滤光器来过滤。 可以比较从狭窄和宽收集通道获得的信号，以区分微划痕和微粒。 可以从其他辐射收集向前散射的辐射，并进行比较以区分微划痕和微粒。 当通过S和P偏振辐射依次照射表面时，测量散射强度并进行比较以区分微划痕和微粒。 可以使用轮廓仪或扫描探针显微镜来测量代表性膜以确定其粗糙度，并且可以通过上述仪器来确定雾度以构建数据库。 然后可以通过测量雾度值和数据库来确定未知膜的表面粗糙度。
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9.发明授权Methods and systems for improved localized feature quantification in surface metrology tools 有权用于改进表面计量工具中局部特征量化的方法和系统公开(公告)号：US08630479B2
公开(公告)日：2014-01-14
申请号：US12986176
申请日：2011-01-07
申请人： Haiguang Chen , Jaydeep Sinha , Shouhong Tang , John Hager , Andrew Zeng , Sergey Kamensky
发明人： Haiguang Chen , Jaydeep Sinha , Shouhong Tang , John Hager , Andrew Zeng , Sergey Kamensky
IPC分类号： G06K9/00
CPC分类号： G06T5/002 , G06T5/20 , G06T7/0004 , G06T2207/30148
摘要： A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from SEMI standard high pass, such as Gaussian and Double Gaussian filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. Additional steps may also include: filtering data from measurements of localized features on wafers and adjusting the filtering behavior according to the statistics of extreme data samples.
摘要翻译： 公开了一种能够更精确地测量晶片上局部特征的方法。 该方法包括：a）执行高阶表面拟合，以更有效地去除低频形状分量，并减少通常从SEMI标准高通（如高斯和双高斯滤波）观察到的信号衰减; b）从表面拟合处理阶段构造和应用适当的二维LFM窗口到残余图像，以有效地减少区域边界处的残余伪像; c）使用伪影图像计算该区域的度量以获得更准确和可靠的测量; 以及d）使用从前面和背面数据获得的基于站点的度量来量化感兴趣的特征。 附加步骤还可以包括：根据晶片上局部特征的测量过滤数据，并根据极端数据样本的统计调整滤波行为。
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公开(公告)号：US06538730B2
公开(公告)日：2003-03-25
申请号：US09828269
申请日：2001-04-06
IPC分类号： G01N2100
CPC分类号： G01N21/956 , G01N21/21 , G01N21/9501
摘要： Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles. Intensity of scattering is measured when the surface is illuminated sequentially by S- and P-polarized radiation and compared to distinguish between micro-scratches and particles. Representative films may be measured using profilometers or scanning probe microscopes to determine their roughness and by the above-described instruments to determine haze in order to build a database. Surface roughness of unknown films may then be determined by measuring haze values and from the database.
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