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公开(公告)号：US4864369A
公开(公告)日：1989-09-05
申请号：US214997
申请日：1988-07-05
CPC分类号： H01L33/30 , H01L33/0025 , H01L33/0062
摘要： A semiconductor light emitting heterostructure device is disclosed. The device comprises an n-type GaAs substrate, a first n-type laeyr of AlGaAs adjacent to the substrate, a second p-type light emitting AlGaAs layer adjacent to the first layer, and a third p-type AlGaAs layer suitable for bonding to an aluminum contact. The device starts with an n-type substrate which is more readily available and has a p-side up configuration which is more suitable for bonding to an aluminum contact.
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公开(公告)号：US5502316A
公开(公告)日：1996-03-26
申请号：US542210
申请日：1995-10-12
CPC分类号： H01L33/30 , H01L25/0756 , H01L33/005 , H01L33/0062 , H01L33/0079 , H01L33/0087 , H01L2924/0002 , H01L33/145
摘要： A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.
摘要翻译： 形成发光二极管（LED）的方法包括提供临时生长衬底，其被选择用于与制造具有期望的机械特性的LED层的相容性。 例如，晶格匹配是重要的考虑因素。 然后在临时生长衬底上生长LED层。 由此实现了高的晶体质量，之后可以去除临时生长衬底。 使用晶片接合技术将第二基板结合到LED层。 选择第二基板用于光学性能，而不是机械性能。 优选地，第二衬底是光学透明且导电的，并且执行晶片接合技术以实现第二衬底和LED层之间的低电阻界面。 还可以进行晶片结合以提供钝化或光反射或限定电流。
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公开(公告)号：US5376580A
公开(公告)日：1994-12-27
申请号：US36532
申请日：1993-03-19
CPC分类号： H01L33/30 , H01L25/0756 , H01L33/005 , H01L33/0062 , H01L33/0079 , H01L33/0087 , H01L2924/0002 , H01L33/145
摘要： A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.
摘要翻译： 形成发光二极管（LED）的方法包括提供临时生长衬底，其被选择用于与制造具有期望的机械特性的LED层的相容性。 例如，晶格匹配是重要的考虑因素。 然后在临时生长衬底上生长LED层。 由此实现了高的晶体质量，之后可以去除临时生长衬底。 使用晶片接合技术将第二基板结合到LED层。 选择第二基板用于光学性能，而不是机械性能。 优选地，第二衬底是光学透明且导电的，并且执行晶片接合技术以实现第二衬底和LED层之间的低电阻界面。 还可以进行晶片结合以提供钝化或光反射或限定电流。
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公开(公告)号：US4026240A
公开(公告)日：1977-05-31
申请号：US632541
申请日：1975-11-17
CPC分类号： C30B19/063 , Y10S414/135
摘要： A liquid phase epitaxial reactor is provided in which a simple cycling mechanism sequentially feeds semiconductor wafers from an input stack into a deposition region and thence to an output stack. In preferred embodiments, a cam is employed to tilt the output stack to accommodate the positioning of each successive wafer in the stack.
摘要翻译： 提供了一种液相外延反应器，其中简单的循环机构将半导体晶片从输入堆叠顺序进料到沉积区域中，然后从输送堆叠。 在优选实施例中，使用凸轮来倾斜输出叠层以适应每个连续晶片在叠层中的定位。
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