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公开(公告)号:US07683459B2
公开(公告)日:2010-03-23
申请号:US12131788
申请日:2008-06-02
申请人: Wei Ma , Xunqing Shu , Chang Hwa Chung
发明人: Wei Ma , Xunqing Shu , Chang Hwa Chung
CPC分类号: H01L23/481 , H01L21/6836 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2221/6834 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/13099 , H01L2224/83194 , H01L2224/9202 , H01L2224/9205 , H01L2224/9212 , H01L2224/94 , H01L2225/06541 , H01L2924/0002 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/07811 , H01L2924/10253 , H01L2924/14 , H01L2224/83 , H01L2224/81 , H01L2924/00 , H01L2224/05552
摘要: There is described a hybrid bonding method for through-silicon-via based wafer stacking. Patterned adhesive layers are provided to join together adjacent wafers in the stack, while solder bonding is used to electrically connect the vias. The adhesive layers are patterned to enable outgassing and to provide stress relief.
摘要翻译: 描述了用于基于硅通孔的晶片堆叠的混合结合方法。 提供图案化的粘合剂层以将堆叠中的相邻晶片连接在一起,同时使用焊接来电连接通孔。 图案化粘合剂层以能够脱气并提供应力消除。