公开(公告)号：US20070018570A1

公开(公告)日：2007-01-25

申请号：US11161024

申请日：2005-07-20

申请人： Wei-Jen Tai ,  Yung-Chia Kuan ,  Mu-Ching Hung

发明人： Wei-Jen Tai ,  Yung-Chia Kuan ,  Mu-Ching Hung

IPC分类号： H05B33/14 ,  H05B33/24 ,  H05B33/10

CPC分类号： H05B33/26 ,  B65D5/542 ,  H01L27/3283 ,  H01L27/3288 ,  H01L27/329 ,  H01L51/0021 ,  H01L51/5206

摘要： An organic electroluminescence device comprising a plurality of first electrodes, a plurality of first auxiliary electrodes, a plurality of second auxiliary electrodes, a plurality of organic emitting patterns and a plurality of second electrodes is provided. The first electrodes are arranged on a substrate. The first auxiliary electrodes are disposed on at least one edge of the substrate, wherein each first auxiliary electrode is electrically connected with each first electrode. The second auxiliary electrodes are disposed on another edge of the substrate, wherein the first auxiliary electrodes and the second auxiliary electrodes are constituted of a double layer of an aluminium-neodymium (Al—Nd) alloy layer and an aluminium-neodymium nitride layer. The organic emitting patterns are arranged over the first electrodes. The second electrodes are arranged over the organic emitting patterns, wherein each second electrode is electrically connected to each second auxiliary electrode.

摘要翻译： 提供了包括多个第一电极，多个第一辅助电极，多个第二辅助电极，多个有机发光图案和多个第二电极的有机电致发光器件。 第一电极布置在基板上。 第一辅助电极设置在基板的至少一个边缘上，其中每个第一辅助电极与每个第一电极电连接。 第二辅助电极设置在基板的另一边缘上，其中第一辅助电极和第二辅助电极由铝 - 钕（Al-Nd）合金层和铝 - 钕氮化物层的双层构成。 有机发光图案布置在第一电极上。 第二电极布置在有机发光图案上，其中每个第二电极电连接到每个第二辅助电极。

公开(公告)号：US07405113B2

公开(公告)日：2008-07-29

申请号：US11832550

申请日：2007-08-01

申请人： Chuan-Yi Wu ,  Chin-Chuan Lai ,  Yung-Chia Kuan ,  Wei-Jen Tai

发明人： Chuan-Yi Wu ,  Chin-Chuan Lai ,  Yung-Chia Kuan ,  Wei-Jen Tai

IPC分类号： H01L21/00

CPC分类号： H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669

摘要： A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.

摘要翻译： 提供一种薄膜晶体管，其包括基板，栅极，第一介电层，沟道层，源极/漏极和第二介电层。 栅极设置在基板上，栅极和基板被第一介电层覆盖。 沟道层至少设置在栅极上方的第一介电层上。 源极/漏极设置在沟道层上。 源/漏包括第一阻挡层，导电层和第二阻挡层。 第一阻挡层设置在导电层和沟道层之间。 导电层被第一阻挡层和第二阻挡层覆盖。 源极/漏极被第二介电层覆盖。 因此，可以减少电气字符的变化。 此外，还提供了一种制造薄膜晶体管的方法。

公开(公告)号：US20070269940A1

公开(公告)日：2007-11-22

申请号：US11832550

申请日：2007-08-01

申请人： CHUAN-YI WU ,  Chin-Chuan Lai ,  Yung-Chia Kuan ,  Wei-Jen Tai

发明人： CHUAN-YI WU ,  Chin-Chuan Lai ,  Yung-Chia Kuan ,  Wei-Jen Tai

IPC分类号： H01L21/84

CPC分类号： H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669

摘要： A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.

摘要翻译： 提供一种薄膜晶体管，其包括基板，栅极，第一介电层，沟道层，源极/漏极和第二介电层。 栅极设置在基板上，栅极和基板被第一介电层覆盖。 沟道层至少设置在栅极上方的第一介电层上。 源极/漏极设置在沟道层上。 源/漏包括第一阻挡层，导电层和第二阻挡层。 第一阻挡层设置在导电层和沟道层之间。 导电层被第一阻挡层和第二阻挡层覆盖。 源极/漏极被第二介电层覆盖。 因此，可以减少电气字符的变化。 此外，还提供了一种制造薄膜晶体管的方法。

公开(公告)号：US07291885B2

公开(公告)日：2007-11-06

申请号：US11214677

申请日：2005-08-29

申请人： Chuan-Yi Wu ,  Chin-Chuan Lai ,  Yung-Chia Kuan ,  Wei-Jen Tai

发明人： Chuan-Yi Wu ,  Chin-Chuan Lai ,  Yung-Chia Kuan ,  Wei-Jen Tai

IPC分类号： H01L27/01

CPC分类号： H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669

摘要： A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.

摘要翻译： 提供一种薄膜晶体管，其包括基板，栅极，第一介电层，沟道层，源极/漏极和第二介电层。 栅极设置在基板上，栅极和基板被第一介电层覆盖。 沟道层至少设置在栅极上方的第一介电层上。 源极/漏极设置在沟道层上。 源/漏包括第一阻挡层，导电层和第二阻挡层。 第一阻挡层设置在导电层和沟道层之间。 导电层被第一阻挡层和第二阻挡层覆盖。 源极/漏极被第二介电层覆盖。 因此，可以减少电气字符的变化。 此外，还提供了一种制造薄膜晶体管的方法。

公开(公告)号：US20070046198A1

公开(公告)日：2007-03-01

申请号：US11161993

申请日：2005-08-25

申请人： Yung-Chia Kuan ,  Wei-Jen Tai

发明人： Yung-Chia Kuan ,  Wei-Jen Tai

IPC分类号： H05B33/04

CPC分类号： H01L51/5259 ,  H01L51/524 ,  H01L2251/566

摘要： A method for fabricating a cover plate of an organic electroluminescent device comprising the following steps is provided. First, a substrate is provided, wherein the substrate has a bonding region. Then, a liquid-state desiccant layer is formed on the substrate, wherein the liquid-state desiccant layer is surrounded by the bonding region. Next, the liquid-state desiccant layer is cured to form a desiccant layer. Then, the bonding region of the substrate is cleaned. As mentioned above, the contaminants on the bonding region can be drastically reduced. Moreover, an organic electroluminescent device and a cover plate thereof are also provided.

摘要翻译： 提供一种制造有机电致发光器件的盖板的方法，包括以下步骤。 首先，提供衬底，其中衬底具有接合区域。 然后，在基板上形成液态干燥剂层，其中液态干燥剂层被接合区域包围。 接着，将液态干燥剂层固化形成干燥剂层。 然后，清洁基板的接合区域。 如上所述，结合区域上的污染物可以大大降低。 此外，还提供有机电致发光器件及其盖板。

公开(公告)号：US20070045734A1

公开(公告)日：2007-03-01

申请号：US11214677

申请日：2005-08-29

申请人： Chuan-Yi Wu ,  Chin-Chuan Lai ,  Yung-Chia Kuan ,  Wei-Jen Tai

发明人： Chuan-Yi Wu ,  Chin-Chuan Lai ,  Yung-Chia Kuan ,  Wei-Jen Tai

IPC分类号： H01L27/12

CPC分类号： H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669

摘要： A thin film transistor is provided, including a substrate, a gate, a first dielectric layer, a channel layer, a source/drain and a second dielectric layer. The gate is disposed on the substrate, and the gate and the substrate are covered with the first dielectric layer. The channel layer is at least disposed on the first dielectric layer above the gate. The source/drain is disposed on the channel layer. The source/drain includes a first barrier layer, a conductive layer and a second barrier layer. The first barrier layer is disposed between the conductive layer and the channel layer. The conductive layer is covered with the first barrier layer and the second barrier layer. The source/drain is covered with the second dielectric layer. Accordingly, the variation of electric characters can be reduced. Moreover, a method for fabricating a thin film transistor is also provided.

公开(公告)号：US08395592B2

公开(公告)日：2013-03-12

申请号：US12512664

申请日：2009-07-30

申请人： Su-Hwa Chao ,  Shang-Li Lee ,  Wei-Jen Tai

发明人： Su-Hwa Chao ,  Shang-Li Lee ,  Wei-Jen Tai

IPC分类号： G06F3/041

CPC分类号： G06F3/045

摘要： A sensing system is provided in the present application. The sensing system includes a plurality of input areas, by each of which an input is received and an input signal is generated; and a processing device electrically coupled with the each of the plurality of input areas and performing a validation criterion for determining a means processing the input signal.

摘要翻译： 本申请中提供了感测系统。 感测系统包括多个输入区域，每个输入区域被接收到输入并产生输入信号; 以及与所述多个输入区域中的每一个电耦合的处理装置，并且执行用于确定处理所述输入信号的装置的确认标准。

公开(公告)号：US20070000609A1

公开(公告)日：2007-01-04

申请号：US11308830

申请日：2006-05-12

申请人： Wei-Jen Tai ,  Chuan-Yi Wu ,  Mei-Kuei Tseng ,  Ming-Tan Hsu

发明人： Wei-Jen Tai ,  Chuan-Yi Wu ,  Mei-Kuei Tseng ,  Ming-Tan Hsu

IPC分类号： C23F1/00

CPC分类号： C23F1/08 ,  C23F1/34 ,  C23F1/40

摘要： An etching apparatus, for etching copper or silver, which includes a hydrogen peroxide tank, an ammonium hydroxide tank, a water tank, an etching tank, a piping system and a temperature control device, is provided. The piping system connects the hydrogen peroxide tank, the ammonium hydroxide tank, the water tank to the etching tank, and the temperature control device is disposed around the hydrogen peroxide tank, the ammonium hydroxide tank and the etching tank to maintain the temperatures of them below the room temperature and above 12 degree centigrade. An etching process is also provided. First, hydrogen peroxide and ammonium hydroxide having a temperature in a temperature-range below the room temperature and above 12 degree centigrade, is provided. Then, water, hydrogen peroxide and ammonium hydroxide are mixed to be an etchant with a temperature maintained in said temperature temperature-range. Next, the etchant is utilized for etching copper or silver.

摘要翻译： 提供一种用于蚀刻铜或银的蚀刻装置，其包括过氧化氢罐，氢氧化铵罐，水箱，蚀刻槽，管道系统和温度控制装置。 管道系统将过氧化氢罐，氢氧化铵罐，水箱连接到蚀刻槽，并且温度控制装置设置在过氧化氢罐，氢氧化铵槽和蚀刻槽周围以将它们的温度保持在低于 室温12摄氏度以上。 还提供蚀刻工艺。 首先，提供温度在室温以下且摄氏12度以上的过氧化氢和氢氧化铵。 然后，将水，过氧化氢和氢氧化铵混合成为温度保持在所述温度温度范围内的蚀刻剂。 接下来，蚀刻剂用于蚀刻铜或银。