公开(公告)号：US20080121863A1

公开(公告)日：2008-05-29

申请号：US11753528

申请日：2007-05-24

Applicant: Wei-Su CHEN

Inventor： Wei-Su CHEN

IPC: H01L45/00

CPC classification number: G11C13/0004 ,  H01L27/2409 ,  H01L27/2445 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1691

Abstract: A phase change memory device is provided. The phase change memory device includes a substrate comprising a stacked structure. The stacked structure comprises a plurality of insulating layers and conductive layers. Any two of the conductive layers are spaced apart by one of the conductive layers. A first electrode structure with a first sidewall and a second sidewall is formed on the stacked structure. A plurality of heating electrodes is placed on the conductive layers and adjacent to the first sidewall and the second sidewall of the first electrode structure. A pair of phase change material spacers is placed on the first sidewall and the second sidewall of the first electrode structure. The phase change material sidewalls cover the plurality of heating electrodes.

Abstract translation: 提供了相变存储器件。 相变存储器件包括包括堆叠结构的衬底。 堆叠结构包括多个绝缘层和导电层。 导电层中的任何两个由一个导电层隔开。 具有第一侧壁和第二侧壁的第一电极结构形成在堆叠结构上。 多个加热电极放置在导电层上并与第一电极结构的第一侧壁和第二侧壁相邻。 一对相变材料间隔物被放置在第一电极结构的第一侧壁和第二侧壁上。 相变材料侧壁覆盖多个加热电极。