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公开(公告)号:US08932962B2
公开(公告)日:2015-01-13
申请号:US13442040
申请日:2012-04-09
申请人: Weibo Yu , Kuo Bin Huang , Chao-Cheng Chen , Syun-Ming Jang
发明人: Weibo Yu , Kuo Bin Huang , Chao-Cheng Chen , Syun-Ming Jang
IPC分类号: H01L21/302
CPC分类号: H01L21/6708 , H01L21/30608 , H01L21/31111 , H01L21/67109 , H01L22/12 , H01L22/20
摘要: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.
摘要翻译: 用于将液体蚀刻剂分配到晶片上的方法和设备使用扫描分配喷嘴将液体蚀刻剂分配到晶片上,同时根据分配喷嘴在晶片上的径向位置实时控制蚀刻剂的分配温度。 控制蚀刻剂的分配温度以提高蚀刻剂的有效性,从而补偿晶片中较低的蚀刻速率区域。
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公开(公告)号:US09355874B2
公开(公告)日:2016-05-31
申请号:US13244337
申请日:2011-09-24
申请人: Weibo Yu , Hsueh-Chin Lu , Han-Guan Chew , Kuo Bin Huang , Chao-Cheng Chen , Syun-Ming Jang
发明人: Weibo Yu , Hsueh-Chin Lu , Han-Guan Chew , Kuo Bin Huang , Chao-Cheng Chen , Syun-Ming Jang
IPC分类号: C03C15/00 , H01L21/67 , H01L21/311
CPC分类号: H01L21/6708 , H01L21/31111
摘要: A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.
摘要翻译: 公开了在单晶片蚀刻装置中实现的单晶片蚀刻装置和各种方法。 在一个实施例中,在单晶片蚀刻装置中蚀刻氮化硅层包括:将磷酸加热至第一温度; 将硫酸加热至第二温度; 混合加热的磷酸和加热的硫酸; 将磷酸/硫酸混合物加热至第三温度; 并用加热的磷酸/硫酸混合物蚀刻氮化硅层。
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公开(公告)号:US20130078809A1
公开(公告)日:2013-03-28
申请号:US13244337
申请日:2011-09-24
申请人: Weibo Yu , Hsueh-Chin Lu , Han-Guan Chew , Kuo Bin Huang , Chao-Cheng Chen , Syun-Ming Jang
发明人: Weibo Yu , Hsueh-Chin Lu , Han-Guan Chew , Kuo Bin Huang , Chao-Cheng Chen , Syun-Ming Jang
IPC分类号: H01L21/306
CPC分类号: H01L21/6708 , H01L21/31111
摘要: A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.
摘要翻译: 公开了在单晶片蚀刻装置中实现的单晶片蚀刻装置和各种方法。 在一个实施例中,在单晶片蚀刻装置中蚀刻氮化硅层包括:将磷酸加热到第一温度; 将硫酸加热至第二温度; 混合加热的磷酸和加热的硫酸; 将磷酸/硫酸混合物加热至第三温度; 并用加热的磷酸/硫酸混合物蚀刻氮化硅层。
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公开(公告)号:US20130330906A1
公开(公告)日:2013-12-12
申请号:US13490635
申请日:2012-06-07
申请人: Weibo Yu , Ming-His Yeh , Chih-Tang Peng , Hao-Ming Lien , Chao-Cheng Chen , Syun-Ming Jang
发明人: Weibo Yu , Ming-His Yeh , Chih-Tang Peng , Hao-Ming Lien , Chao-Cheng Chen , Syun-Ming Jang
IPC分类号: H01L21/762
CPC分类号: H01L21/76224 , H01L29/66795
摘要: A method of fabricating a semiconductor IC is disclosed. The method includes receiving a device. The device includes a semiconductor substrate, a plurality of fins and trenches between fins in the semiconductor substrate. The method also includes filling the trenches with a dielectric material to form shallow trench isolations (STI), applying a low-thermal-budget annealing to the dielectric material, and applying a wet-treatment to the dielectric material.
摘要翻译: 公开了制造半导体IC的方法。 该方法包括接收设备。 该器件包括半导体衬底,半导体衬底中的翅片之间的多个散热片和沟槽。 该方法还包括用介电材料填充沟槽以形成浅沟槽隔离(STI),对介电材料施加低热预算退火,以及对电介质材料进行湿法处理。
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公开(公告)号:US08735252B2
公开(公告)日:2014-05-27
申请号:US13490635
申请日:2012-06-07
申请人: Weibo Yu , Ming-Hsi Yeh , Chih-Tang Peng , Hao-Ming Lien , Chao-Cheng Chen , Syun-Ming Jang
发明人: Weibo Yu , Ming-Hsi Yeh , Chih-Tang Peng , Hao-Ming Lien , Chao-Cheng Chen , Syun-Ming Jang
IPC分类号: H01L21/336
CPC分类号: H01L21/76224 , H01L29/66795
摘要: A method of fabricating a semiconductor IC is disclosed. The method includes receiving a device. The device includes a semiconductor substrate, a plurality of fins and trenches between fins in the semiconductor substrate. The method also includes filling the trenches with a dielectric material to form shallow trench isolations (STI), applying a low-thermal-budget annealing to the dielectric material, and applying a wet-treatment to the dielectric material.
摘要翻译: 公开了制造半导体IC的方法。 该方法包括接收设备。 该器件包括半导体衬底,半导体衬底中的翅片之间的多个散热片和沟槽。 该方法还包括用介电材料填充沟槽以形成浅沟槽隔离(STI),对介电材料施加低热预算退火,以及对电介质材料进行湿法处理。
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