公开(公告)号：US20100170639A1

公开(公告)日：2010-07-08

申请号：US12636886

申请日：2009-12-14

申请人： Wen-Tsun Chen ,  Shin-Chih Liaw ,  Tao-Ming Liao ,  Chia-Hung Shen ,  Yun-Fei Lien

发明人： Wen-Tsun Chen ,  Shin-Chih Liaw ,  Tao-Ming Liao ,  Chia-Hung Shen ,  Yun-Fei Lien

IPC分类号： C23F1/08 ,  B08B3/04

CPC分类号： C23F1/08 ,  B08B3/022 ,  H05K3/0085 ,  H05K2203/075 ,  H05K2203/1509 ,  H05K2203/163

摘要： An exemplary apparatus for wet processing a substantially rectangular substrate includes a conveyor, a supporting mechanism, an adjusting mechanism, a processing module and a dosing system. The conveyor is configured for conveying the substrate to a wet process work station. The supporting mechanism is configured for supporting the substrate away from the conveyor. The adjusting mechanism is configured for adjusting the orientation of the substrate. The processing module is configured for obtaining an area of a surface of the substrate. The dosing system communicates with the processing unit, and is configured for dispensing a corresponding amount of wet processing liquid to the substrate to wet process the substrate according to the area of the surface of the substrate from the processing module.

摘要翻译： 用于湿处理基本上矩形的基板的示例性装置包括传送器，支撑机构，调节机构，处理模块和定量给料系统。 输送机构造成将基底输送到湿法加工工位。 支撑机构构造成用于将基板远离输送机支撑。 调整机构构造成用于调整基板的取向。 处理模块被配置为获得基板的表面的面积。 配量系统与处理单元连通，并且被配置为将相应量的湿处理液体分配到基板，以根据来自处理模块的基板表面的面积来湿处理基板。

公开(公告)号：US08464734B2

公开(公告)日：2013-06-18

申请号：US12636886

申请日：2009-12-14

申请人： Wen-Tsun Chen ,  Shin-Chih Liaw ,  Tao-Ming Liao ,  Chia-Hung Shen ,  Yun-Fei Lien

发明人： Wen-Tsun Chen ,  Shin-Chih Liaw ,  Tao-Ming Liao ,  Chia-Hung Shen ,  Yun-Fei Lien

IPC分类号： C23F1/08 ,  B08B3/04

CPC分类号： C23F1/08 ,  B08B3/022 ,  H05K3/0085 ,  H05K2203/075 ,  H05K2203/1509 ,  H05K2203/163

摘要： An exemplary apparatus for wet processing a substantially rectangular substrate includes a conveyor, a supporting mechanism, an adjusting mechanism, a processing module and a dosing system. The conveyor is configured for conveying the substrate to a wet process work station. The supporting mechanism is configured for supporting the substrate away from the conveyor. The adjusting mechanism is configured for adjusting the orientation of the substrate. The processing module is configured for obtaining an area of a surface of the substrate. The dosing system communicates with the processing unit, and is configured for dispensing a corresponding amount of wet processing liquid to the substrate to wet process the substrate according to the area of the surface of the substrate from the processing module.

摘要翻译： 用于湿处理基本上矩形的基板的示例性装置包括传送器，支撑机构，调节机构，处理模块和定量给料系统。 输送机构造成将基底输送到湿法加工工位。 支撑机构构造成用于将基板远离输送机支撑。 调整机构构造成用于调整基板的取向。 处理模块被配置为获得基板的表面的面积。 配量系统与处理单元连通，并且被配置为将相应量的湿处理液体分配到基板，以根据来自处理模块的基板表面的面积来湿处理基板。

公开(公告)号：US08062580B2

公开(公告)日：2011-11-22

申请号：US12535909

申请日：2009-08-05

申请人： Wen-Tsun Chen ,  Shin-Chih Liaw ,  Tao-Ming Liao ,  Chia-Hung Shen ,  Cheng-Hsien Lin

发明人： Wen-Tsun Chen ,  Shin-Chih Liaw ,  Tao-Ming Liao ,  Chia-Hung Shen ,  Cheng-Hsien Lin

IPC分类号： C22B3/02

CPC分类号： C22B7/006 ,  C02F2101/20 ,  C02F2103/346 ,  C22B3/02 ,  C22B3/46 ,  C22B15/0091 ,  Y02P10/234 ,  Y02P10/236

摘要： An apparatus for recycling metals from metal ions containing waste solution includes a conveying device, a reducing agent supplier and a solution supplier. The conveying device includes a first ferromagnetic conveyor belt, a first roller, and a second roller. The first and second rollers are substantially horizontally arranged, and the second roller is arranged at a lower position relative to the first roller and spaced from the first roller. The ferromagnetic conveyor belt is wrapped around the first and second rollers. The reducing agent supplier is used for supplying a reducing agent onto the first conveyor belt, the ferromagnetic conveyor belt is capable of conveying the reducing agent from the second roller to the first roller. The solution supplier is configured for supplying the waste solution onto the first conveyor belt.

摘要翻译： 用于从含金属离子的废液中回收金属的设备包括输送装置，还原剂供应商和溶液供应商。 输送装置包括第一铁磁输送带，第一辊和第二辊。 第一和第二辊基本上是水平布置的，并且第二辊布置在相对于第一辊子的下部位置并与第一辊子间隔开。 铁磁输送带缠绕在第一和第二辊子周围。 还原剂供应器用于将还原剂供应到第一传送带上，铁磁传送带能够将还原剂从第二辊输送到第一辊。 解决方案供应商被配置为将废溶液供应到第一传送带上。

公开(公告)号：US07923076B2

公开(公告)日：2011-04-12

申请号：US11644861

申请日：2006-12-21

申请人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

发明人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/402 ,  C23C16/345 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/513

摘要： A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle θ2 of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.

摘要翻译： 提供了一种等离子体沉积装置。 等离子体沉积设备包括一个室。 底座放置在腔室中。 等离子体发生器放置在腔室中并在基座上方。 等离子体发生器包括用于等离子体薄膜沉积的等离子体射流，其具有在基座的法线方向与等离子体射流的排出方向之间的0°至90°之间的放电方向角度θ。 气体提取装置放置在腔室中并且在基座上方。 气体提取装置包括：气体提取管，其提供用于颗粒的泵送路径和具有泵送方向角度的副产物;在基座的法线方向和气体提取装置的泵送方向之间为0°至90°的2°; 抽管。

公开(公告)号：US20110120372A1

公开(公告)日：2011-05-26

申请号：US13019269

申请日：2011-02-01

申请人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

发明人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

IPC分类号： C23C16/455 ,  C23C16/50 ,  B05C11/00 ,  C23C16/458

CPC分类号： C23C16/402 ,  C23C16/345 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/513

摘要： A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle θ2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.

摘要翻译： 提供了一种等离子体沉积装置。 等离子体沉积设备包括一个室。 底座放置在腔室中。 等离子体发生器放置在腔室中并在基座上方。 等离子体发生器包括用于等离子体薄膜沉积的等离子体射流，其具有放电方向角度θ;在基座的法线方向与等离子体射流的排出方向之间大于0°且小于90°的1。 气体提取管延伸到腔室中并且在基座上。 气体提取管为具有泵送方向角度的颗粒和副产物提供泵送路径; 2在基座的法线方向与气体提取管的泵送方向之间大于0°且小于90°。 室保持在环境大气压力。

公开(公告)号：US20080032063A1

公开(公告)日：2008-02-07

申请号：US11644861

申请日：2006-12-21

申请人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

发明人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

IPC分类号： C23C16/00 ,  H05H1/24

CPC分类号： C23C16/402 ,  C23C16/345 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/513

摘要： A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle θ2 of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.

摘要翻译： 提供了一种等离子体沉积装置。 等离子体沉积设备包括一个室。 底座放置在腔室中。 等离子体发生器放置在腔室中并在基座上方。 等离子体发生器包括用于等离子体薄膜沉积的等离子体射流，其具有在基座的法线方向和等离子体射流的排出方向之间的0°至90°之间的放电方向角θ1。 气体提取装置放置在腔室中并且在基座上方。 气体提取装置包括气体提取管，其提供用于颗粒的泵送路径和在基座的法线方向上具有0°至90°的泵送方向角θ2> 2°的副产物， 抽气管的泵送方向。

公开(公告)号：US08281741B2

公开(公告)日：2012-10-09

申请号：US13019269

申请日：2011-02-01

申请人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

发明人： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

IPC分类号： C23C16/455 ,  C23C16/452 ,  C23C16/50 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/402 ,  C23C16/345 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/513

摘要： A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle θ2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.

摘要翻译： 提供了一种等离子体沉积装置。 等离子体沉积设备包括一个室。 底座放置在腔室中。 等离子体发生器放置在腔室中并在基座上方。 等离子体发生器包括用于等离子体薄膜沉积的等离子体射流，其具有放电方向角度θ;在基座的法线方向与等离子体射流的排出方向之间大于0°且小于90°的1。 气体提取管延伸到腔室中并且在基座上。 气体提取管为具有泵送方向角度的颗粒和副产物提供泵送路径; 2在基座的法线方向与气体提取管的泵送方向之间大于0°且小于90°。 室保持在环境大气压力。