公开(公告)号：US11913114B2

公开(公告)日：2024-02-27

申请号：US16983142

申请日：2020-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Hyun Yang ,  Sang Yub Ie ,  Tae Yong Kim ,  Phil Ouk Nam

IPC: C23C16/455 ,  H01L21/67 ,  H01L21/673

CPC classification number: C23C16/45578 ,  C23C16/45546 ,  C23C16/45595 ,  H01L21/67 ,  H01L21/673

Abstract: A semiconductor manufacturing apparatus including a process chamber and a boat having a support member supporting substrates arranged in a first direction. An inner tube encloses the boat and includes a slit along a side wall. A nozzle supplies a process gas and includes a gas injection port at a position corresponding to the slit. The gas injection port includes a first inlet and first outlet. The slit includes a second inlet and second outlet. A distance to an end of the first inlet from a center line that connects a center of the first inlet and a center of the second outlet is different from the distance from the center line to an end of the first outlet and/or a distance from the center line to an end of the second inlet is different from a distance from the center line to an end of the second outlet.

公开(公告)号：US09831069B2

公开(公告)日：2017-11-28

申请号：US14122028

申请日：2012-05-31

Applicant: Masaki Kusuhara

Inventor： Masaki Kusuhara

IPC: H01L31/18 ,  C23C16/34 ,  C23C16/50 ,  H01J37/32 ,  C23C16/455 ,  H01L31/0216 ,  H05H1/24 ,  H01L21/02

CPC classification number: H01J37/3255 ,  C23C16/345 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45595 ,  C23C16/50 ,  H01L21/0217 ,  H01L21/02274 ,  H01L31/02168 ,  H05H1/2406 ,  H05H2001/2418 ,  H05H2001/2431 ,  H05H2001/245 ,  H05H2001/2456

Abstract: Heretofore, silicon nitride film formed by low pressure plasma CVD has been used for an antireflection film of a solar battery. But it is difficult to reduce the production cost of a solar battery, because, in a low pressure process, facility cost and process cost are expensive. As disclosed, a nitride film is formed by atmospheric pressure plasma CVD using dielectric barrier discharge generated by a plasma head where a plurality of plasma head unit parts is installed in parallel to generate plasma by applying electric field or magnetic field via a dielectric member. Stable glow discharge is formed even under atmospheric pressure by dielectric barrier discharge. And nitride film deposition under atmospheric pressure and low cost production of a solar battery is materialized by using dielectric barrier discharge and by reacting different plasmas generated from plasma supply openings laying side-by-side.

公开(公告)号：US09741538B2

公开(公告)日：2017-08-22

申请号：US15075044

申请日：2016-03-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Tomohiro Okumura ,  Satoshi Suemasu

IPC: C23C16/00 ,  H01L21/00 ,  H01J37/32 ,  C23C16/455 ,  C23C16/513 ,  H05H1/30

CPC classification number: H01J37/32009 ,  C23C16/45595 ,  C23C16/513 ,  H01J37/321 ,  H05H1/30

Abstract: Linear coils, a first ceramic block, and a second ceramic block are arranged in an inductively-coupled plasma torch. A chamber has an annular shape. Plasma generated inside the chamber is ejected to a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. The coil is arranged inside a rotating cylindrical ceramic pipe. Accordingly, the plasma can be generated with excellent power efficiency, and fast plasma processing can be performed.

公开(公告)号：US20150167167A1

公开(公告)日：2015-06-18

申请号：US14599517

申请日：2015-01-18

Applicant: Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO

Inventor： Adrianus Johannes Petrus Maria VERMEER ,  Gabi P. JANSSEN

IPC: C23C16/455 ,  C23C16/56 ,  C23C16/50

CPC classification number: C23C16/45551 ,  C23C16/45595 ,  C23C16/4583 ,  C23C16/50 ,  C23C16/54 ,  C23C16/56 ,  F16C29/025 ,  F16C32/0622

Abstract: Apparatus for atomic layer deposition on a surface of a sheeted substrate, comprising: an injector head comprising a deposition space provided with a precursor supply and a precursor drain; said supply and drain arranged for providing a precursor gas flow from the precursor supply via the deposition space to the precursor drain; the deposition space in use being bounded by the injector head and the substrate surface; a gas bearing comprising a bearing gas injector, arranged for injecting a bearing gas between the injector head and the substrate surface, the bearing gas thus forming a gas-bearing; a conveying system providing relative movement of the substrate and the injector head along a plane of the substrate to form a conveying plane along which the substrate is conveyed. A support part arranged opposite the injector head, the support part constructed to provide a gas bearing pressure arrangement that balances the injector head gas-bearing in the conveying plane, so that the substrate is held supportless by said gas bearing pressure arrangement in between the injector head and the support part.

Abstract translation: 用于原子层沉积在片状基底的表面上的装置，包括：注射器头，其包括设置有前体供体和前体排出物的沉积空间; 所述供应和排出设置成用于从所述前体供应源经由所述沉积空间向所述前体排放提供前体气体流; 使用中的沉积空间被注射器头和衬底表面限定; 包括轴承气体注入器的气体轴承，其被布置用于在所述喷射头和所述基板表面之间注入轴承气体，所述轴承气体因此形成气体轴承; 输送系统，其提供所述基底和所述注射器头沿着所述基底的平面的相对运动，以形成所述基底沿着所述输送平面传送的输送平面。 支撑部分，布置成与注射器头相对，支撑部分被构造成提供气体支承压力装置，其平衡输送平面中的喷射器头部气体轴承，使得基板由支撑压力排列保持在喷射器之间 头部和支撑部分。

公开(公告)号：US20110120372A1

公开(公告)日：2011-05-26

申请号：US13019269

申请日：2011-02-01

Applicant: Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

Inventor： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

IPC: C23C16/455 ,  C23C16/50 ,  B05C11/00 ,  C23C16/458

CPC classification number: C23C16/402 ,  C23C16/345 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/513

Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 larger than 0° and less than 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting pipe extends into the chamber and over the pedestal. The gas-extracting pipe provides a pumping path for particles and side-products having a pumping direction angle θ2 larger than 0° and less than 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe. The chamber is kept at an ambient atmospheric pressure.

Abstract translation: 提供了一种等离子体沉积装置。 等离子体沉积设备包括一个室。 底座放置在腔室中。 等离子体发生器放置在腔室中并在基座上方。 等离子体发生器包括用于等离子体薄膜沉积的等离子体射流，其具有放电方向角度θ;在基座的法线方向与等离子体射流的排出方向之间大于0°且小于90°的1。 气体提取管延伸到腔室中并且在基座上。 气体提取管为具有泵送方向角度的颗粒和副产物提供泵送路径; 2在基座的法线方向与气体提取管的泵送方向之间大于0°且小于90°。 室保持在环境大气压力。

公开(公告)号：US07851380B2

公开(公告)日：2010-12-14

申请号：US11861491

申请日：2007-09-26

Applicant: Shelby F. Nelson ,  David H. Levy ,  Lyn M. Irving ,  Peter J. Cowdery-Corvan ,  Diane C. Freeman ,  Carolyn R. Ellinger

Inventor： Shelby F. Nelson ,  David H. Levy ,  Lyn M. Irving ,  Peter J. Cowdery-Corvan ,  Diane C. Freeman ,  Carolyn R. Ellinger

IPC: H01L21/31

CPC classification number: H01L27/1259 ,  B33Y80/00 ,  C23C16/407 ,  C23C16/45551 ,  C23C16/45595 ,  C23C16/545 ,  H01L27/1214 ,  H01L27/1225

Abstract: The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.

Abstract translation: 本发明涉及薄膜电子元件和薄膜晶体管，环境屏障层，电容器，绝缘子和总线线路的制造方法，其中大部分或全部层通过大气原子层沉积工艺制成。

公开(公告)号：US20100068413A1

公开(公告)日：2010-03-18

申请号：US12560690

申请日：2009-09-16

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: B01J19/08 ,  C23C16/54

CPC classification number: C23C16/50 ,  C23C16/45514 ,  C23C16/45595 ,  C23C16/54

Abstract: A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.

Abstract translation: 气相沉积反应器可以包括包括第一通道的第一电极和连接到第一通道的至少一个第一注入孔。 与第一电极电分离的第二电极和用于在第一电极和第二电极之间施加电力以从第一电极和第二电极之间的反应气体产生等离子体的电源。 还提供了使用蒸镀反应器形成薄膜的方法。

公开(公告)号：US20080260967A1

公开(公告)日：2008-10-23

申请号：US11736519

申请日：2007-04-17

Applicant: Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

Inventor： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

IPC: C23C16/50 ,  H05H1/24

CPC classification number: C23C16/4412 ,  C23C16/45544 ,  C23C16/45595 ,  H01J37/3244

Abstract: The embodiments fill the needs of systems and processes that perform substrate surface treatment to provide homogenous, clean, and sometimes activated surface in order to provide good adhesion between layers to improve metal migration and void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.

Abstract translation: 这些实施例填补了执行基板表面处理以提供均匀，清洁和有时被激活的表面的系统和工艺的需要，以便在层之间提供良好的粘附以改善金属迁移和空隙传播。 在一个示例性实施例中，提供了用于进行表面处理和膜沉积的室。 腔室包括用于衬底表面处理的第一邻近头部，其构造成分配第一处理气体以处理第一邻近头部下方的衬底表面的一部分用于衬底表面处理。 该室还包括用于原子层沉积（ALD）的第一邻近头，其被配置成顺序地分配第一反应气体和第一吹扫气体，以将第一ALD膜沉积在ALD的第二接近头下方。

公开(公告)号：US20080032063A1

公开(公告)日：2008-02-07

申请号：US11644861

申请日：2006-12-21

Applicant: Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

Inventor： Chia-Chiang Chang ,  Chin-Jyi Wu ,  Shin-Chih Liaw ,  Chun-Hung Lin

IPC: C23C16/00 ,  H05H1/24

CPC classification number: C23C16/402 ,  C23C16/345 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/513

Abstract: A plasma deposition apparatus is provided. The plasma deposition apparatus comprises a chamber. A pedestal is placed in the chamber. A plasma generator is placed in the chamber and over the pedestal. The plasma generator comprises a plasma jet for plasma thin film deposition having a discharge direction angle θ1 of 0° to 90° between a normal direction of the pedestal and the discharge direction of the plasma jet. A gas-extracting apparatus is placed in the chamber and over the pedestal. The gas-extracting apparatus comprises a gas-extracting pipe providing a pumping path for particles and side-products having a pumping direction angle θ2 of 0° to 90° between the normal direction of the pedestal and the pumping direction of the gas-extracting pipe.

Abstract translation: 提供了一种等离子体沉积装置。 等离子体沉积设备包括一个室。 底座放置在腔室中。 等离子体发生器放置在腔室中并在基座上方。 等离子体发生器包括用于等离子体薄膜沉积的等离子体射流，其具有在基座的法线方向和等离子体射流的排出方向之间的0°至90°之间的放电方向角θ1。 气体提取装置放置在腔室中并且在基座上方。 气体提取装置包括气体提取管，其提供用于颗粒的泵送路径和在基座的法线方向上具有0°至90°的泵送方向角θ2> 2°的副产物， 抽气管的泵送方向。

公开(公告)号：US20060096539A1

公开(公告)日：2006-05-11

申请号：US11272157

申请日：2005-11-10

Applicant: Shinichi Kawasaki ,  Sumio Nakatake ,  Hiroya Kitahata ,  Setsuo Nakajima ,  Yuji Eguchi ,  Junichiro Anzai ,  Yoshinori Nakano

Inventor： Shinichi Kawasaki ,  Sumio Nakatake ,  Hiroya Kitahata ,  Setsuo Nakajima ,  Yuji Eguchi ,  Junichiro Anzai ,  Yoshinori Nakano

IPC: C23C16/00

CPC classification number: C23C16/45574 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45563 ,  C23C16/45595 ,  C23C16/509 ,  H01J37/3244

Abstract: In a plasma film forming apparatus, two first electrodes 51 connected to a power source 4 and two grounded second electrodes 52 are arranged in the order of the second electrode 52, the first electrode 51, the first electrode 51 and the second electrode 52. A first flow passage 50a formed between the central first electrodes 51 allows a raw material gas (first gas) for being formed into a film to pass therethrough. A plasma discharge space 50b of a second flow passage formed between the first and second electrodes 51, 52 on the both sides allows an excitable gas (second gas) to pass therethrough, which excitable gas is exited by plasma such that the raw material can be formed into a film, but that the excitable gas itself is merely excited but not formed into a film. Those gases are converged at a crossing part 20c between the first and second flow passages and blown off via a common blowoff passage 25a. By this, the apparatus composing members such as electrodes can be prevented from being adhered with a film.

Abstract translation: 在等离子体成膜装置中，以第二电极52，第一电极51，第一电极51和第二电极52的顺序排列连接到电源4和两个接地的第二电极52的两个第一电极51。 形成在中央第一电极51之间的第一流路50a允许形成为膜的原料气体（第一气体）通过。 形成在两侧的第一和第二电极51,52之间的第二流路的等离子体放电空间50b允许可激发气体（第二气体）通过，可激发气体通过等离子体排出，使得原料可以 形成膜，但是可兴奋的气体本身仅仅被激发而不形成膜。 那些气体会聚在第一和第二流动通道之间的交叉部分20c处，并经由共同的吹气通道25a吹出。 由此，可以防止构成诸如电极的构件的装置被膜粘附。