公开(公告)号：US20210057638A1

公开(公告)日：2021-02-25

申请号：US16730771

申请日：2019-12-30

Applicant: Western Digital Technologies, Inc.

Inventor： Ronghui ZHOU ,  Ming MAO ,  Ming JIANG ,  Yuankai ZHENG ,  Chen-jung CHIEN ,  Yung-Hung WANG ,  Chih-Ching HU

IPC: H01L43/02 ,  G01R17/10 ,  G01R33/09 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to ˜2 Angstroms.

公开(公告)号：US20210063507A1

公开(公告)日：2021-03-04

申请号：US16730730

申请日：2019-12-30

Applicant: Western Digital Technologies, Inc.

Inventor： Yuankai ZHENG ,  Christian KAISER ,  Zhitao DIAO ,  Chih-Ching HU ,  Chen-jung CHIEN ,  Yung-Hung WANG ,  Dujiang WAN ,  Ronghui ZHOU ,  Ming MAO ,  Ming JIANG ,  Daniele MAURI

IPC: G01R33/09 ,  G01R17/10

Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

公开(公告)号：US20210063504A1

公开(公告)日：2021-03-04

申请号：US16718667

申请日：2019-12-18

Applicant: Western Digital Technologies, Inc.

Inventor： Yuankai ZHENG ,  Christian KAISER ,  Zhitao DIAO ,  Chih-Ching HU ,  Chen-Jung CHIEN ,  Yung-Hung WANG ,  Dujiang WAN ,  Ronghui ZHOU ,  Ming MAO ,  Ming JIANG ,  Daniele MAURI

IPC: G01R33/09 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32 ,  H01F41/30

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.

公开(公告)号：US20210063502A1

公开(公告)日：2021-03-04

申请号：US16718346

申请日：2019-12-18

Applicant: Western Digital Technologies, Inc.

Inventor： Chih-Ching HU ,  Yung-Hung WANG ,  Ann Lorraine CARVAJAL ,  Ming MAO ,  Chen-Jung CHIEN ,  Yuankai ZHENG ,  Ronghui ZHOU ,  Dujiang WAN ,  Carlos CORONA ,  Daniele MAURI ,  Ming JIANG

IPC: G01R33/09 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01F10/32 ,  H01F41/30

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.