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公开(公告)号：US20210055361A1
公开(公告)日：2021-02-25
申请号：US16730746
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Christian KAISER , Zhitao DIAO , Chih-Ching HU , Chen-jung CHIEN , Yung-Hung WANG , Ming MAO , Ming JIANG
Abstract: The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.
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公开(公告)号：US20210063507A1
公开(公告)日：2021-03-04
申请号：US16730730
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Christian KAISER , Zhitao DIAO , Chih-Ching HU , Chen-jung CHIEN , Yung-Hung WANG , Dujiang WAN , Ronghui ZHOU , Ming MAO , Ming JIANG , Daniele MAURI
Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.
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公开(公告)号：US20210063504A1
公开(公告)日：2021-03-04
申请号：US16718667
申请日：2019-12-18
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Christian KAISER , Zhitao DIAO , Chih-Ching HU , Chen-Jung CHIEN , Yung-Hung WANG , Dujiang WAN , Ronghui ZHOU , Ming MAO , Ming JIANG , Daniele MAURI
Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.
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公开(公告)号：US20210063502A1
公开(公告)日：2021-03-04
申请号：US16718346
申请日：2019-12-18
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching HU , Yung-Hung WANG , Ann Lorraine CARVAJAL , Ming MAO , Chen-Jung CHIEN , Yuankai ZHENG , Ronghui ZHOU , Dujiang WAN , Carlos CORONA , Daniele MAURI , Ming JIANG
Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.
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公开(公告)号：US20240071413A1
公开(公告)日：2024-02-29
申请号：US17899823
申请日：2022-08-31
Applicant: Western Digital Technologies, Inc.
Inventor： Ming MAO , Yung-Hung WANG , Chih-Ching HU , Chen-Jung CHIEN , Carlos CORONA , Hongping YUAN , Ming JIANG , Goncalo Marcos BAIÃO DE ALBUQUERQUE
CPC classification number: G11B5/11 , G11B5/2658
Abstract: The present disclosure generally relates to a dual free layer (DFL) read head and methods of forming thereof. In one embodiment, a method of forming a DFL read head comprises depositing a DFL sensor, defining a stripe height of the DFL sensor, depositing a rear bias (RB) adjacent to the DFL sensor, defining a track width of the DFL sensor and the RB, and depositing synthetic antiferromagnetic (SAF) soft bias (SB) side shields adjacent to the DFL sensor. In another embodiment, a method of forming a DFL read head comprises depositing a DFL sensor, defining a track width of the DFL sensor, depositing SAF SB side shields adjacent to the DFL sensor, defining a stripe height of the DFL sensor and the SAF SB side shield, depositing a RB adjacent to the DFL sensor and the SAF SB side shield, and defining a track width of the RB.
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Patent Agency Ranking
公开(公告)号：US20210063509A1
公开(公告)日：2021-03-04
申请号：US16730784
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yung-Hung WANG , Daniele MAURI , Ming MAO , Chen-jung CHIEN , Yuankai ZHENG , Chih-Ching HU , Carlos CORONA , Matthew STEVENSON , Ming JIANG
Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
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公开(公告)号：US20210063508A1
公开(公告)日：2021-03-04
申请号：US16730777
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching HU , Yung-Hung WANG , Yuankai ZHENG , Chen-jung CHIEN , Ming MAO , Daniele MAURI , Ming JIANG
Abstract: The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.
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公开(公告)号：US20240347073A1
公开(公告)日：2024-10-17
申请号：US18228517
申请日：2023-07-31
Applicant: Western Digital Technologies, Inc.
Inventor： Fang CHEN , Chih-Ching HU , Yung-Hung WANG , Chen-Jung CHIEN , Ming MAO , Ming JIANG
CPC classification number: G11B5/3912 , G11B5/3116
Abstract: The present disclosure generally relates to a dual free layer two dimensional magnetic recording read head. The read head comprises a first lower shield, a first sensor disposed over the first lower shield, a first upper shield disposed over the first sensor, a read separation gap (RSG) disposed on the first upper shield, a second lower shield disposed on the RSG, a second sensor disposed over the second lower shield, and a second upper shield disposed over the second sensor. In one embodiment, the RSG comprises SiO2 and has a thickness of about 7 nm to about 14 nm. The SiO2 isolates the first sensor from the second sensor, and is a chemical mechanical processing (CMP) stop layer. In another embodiment, the RSG comprises a first sublayer comprising AlOx and a second sublayer comprising SiO2. The thicknesses of the first and second sublayers are based on an adjustable capacitance.
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公开(公告)号：US20240144966A1
公开(公告)日：2024-05-02
申请号：US18226615
申请日：2023-07-26
Applicant: Western Digital Technologies, Inc.
Inventor： Ming MAO , Chen-Jung CHIEN , Goncalo Marcos BAIÃO DE ALBUQUERQUE , Chih-Ching HU , Yung-Hung WANG , Ming JIANG
CPC classification number: G11B5/3912 , H01F10/3272
Abstract: The present disclosure generally relates to a dual free layer two dimensional magnetic recording read head. The read head comprises a first lower shield, a first sensor disposed over the first lower shield, a first upper shield disposed over the first sensor, a read separation gap (RSG) disposed on the first upper shield, a second lower shield disposed over the RSG, a second sensor disposed over the second lower shield, and a second upper shield disposed over the second sensor. In some embodiments, the second lower shield comprises a CoFeHf layer. In another embodiment, the second lower shield is a synthetic antiferromagnetic multilayer comprising a first shield layer, a second shield layer, and a CoFe/Ru/CoFe anti-ferromagnetic coupling layer or a Ru layer disposed therebetween, the first and second shield layers comprising NiFe and CoFe. In yet another embodiment, the second lower shield comprises layers of Ru, IrMn, and NiFe.
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公开(公告)号：US20210063503A1
公开(公告)日：2021-03-04
申请号：US16718351
申请日：2019-12-18
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching HU , Yung-Hung WANG , Ming MAO , Daniele MAURI , Ming JIANG
Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.
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