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公开(公告)号：US20210390978A1
公开(公告)日：2021-12-16
申请号：US16899366
申请日：2020-06-11
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching HU , Yung-Hung WANG , Ming MAO , Guanxiong LI , Daniele MAURI , Xiaoyong LIU , Yukimasa OKADA , Anup ROY , Chen-jung CHIEN , Hongxue LIU
IPC: G11B5/39
Abstract: The present disclosure generally related to a two dimensional magnetic recording (TDMR) read head having a magnetic tunnel junction (MTJ). Both the upper reader and the lower reader have a dual free layer (DFL) MTJ structure between two shields. A synthetic antiferromagnetic (SAF) soft bias structure bounds the MTJ, and a rear hard bias (RHB) structure is disposed behind the MTJ. The DFL MTJ decreases the distance between the upper and lower reader and hence, improves the area density capacity (ADC). Additionally, the SAF soft bias structures and the rear head bias structure cause the dual free layer MTJ to have a scissor state magnetic moment at the media facing surface (MFS).
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Patent Agency Ranking
公开(公告)号：US20210057638A1
公开(公告)日：2021-02-25
申请号：US16730771
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Ronghui ZHOU , Ming MAO , Ming JIANG , Yuankai ZHENG , Chen-jung CHIEN , Yung-Hung WANG , Chih-Ching HU
Abstract: A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to ˜2 Angstroms.
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公开(公告)号：US20210055361A1
公开(公告)日：2021-02-25
申请号：US16730746
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Christian KAISER , Zhitao DIAO , Chih-Ching HU , Chen-jung CHIEN , Yung-Hung WANG , Ming MAO , Ming JIANG
Abstract: The present disclosure generally relates to a Wheatstone bridge array comprising TMR sensors and a method of fabrication thereof. In the Wheatstone bridge array, there are four distinct TMR sensors. The TMR sensors are all fabricated simultaneously to create four identical TMR sensors that have synthetic antiferromagnetic free layers as the top layer. The synthetic antiferromagnetic free layers comprise a first magnetic layer, a spacer layer, and a second magnetic layer. After forming the four identical TMR sensors, the spacer layer and the second magnetic layer are removed from two TMR sensors. Following the removal of the spacer layer and the second magnetic layer, a new magnetic layer is formed on the now exposed first magnetic layer such that the new magnetic layer has substantially the same thickness as the spacer layer and second magnetic layer combined.
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公开(公告)号：US20210063507A1
公开(公告)日：2021-03-04
申请号：US16730730
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yuankai ZHENG , Christian KAISER , Zhitao DIAO , Chih-Ching HU , Chen-jung CHIEN , Yung-Hung WANG , Dujiang WAN , Ronghui ZHOU , Ming MAO , Ming JIANG , Daniele MAURI
Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.
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公开(公告)号：US20210063509A1
公开(公告)日：2021-03-04
申请号：US16730784
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Yung-Hung WANG , Daniele MAURI , Ming MAO , Chen-jung CHIEN , Yuankai ZHENG , Chih-Ching HU , Carlos CORONA , Matthew STEVENSON , Ming JIANG
Abstract: The present disclosure generally relates to a Wheatstone bridge that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures each have an additional non-TMR resistor as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge is non-zero.
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公开(公告)号：US20210063508A1
公开(公告)日：2021-03-04
申请号：US16730777
申请日：2019-12-30
Applicant: Western Digital Technologies, Inc.
Inventor： Chih-Ching HU , Yung-Hung WANG , Yuankai ZHENG , Chen-jung CHIEN , Ming MAO , Daniele MAURI , Ming JIANG
Abstract: The present disclosure generally relates to a Wheatstone bridge that includes a plurality of resistors comprising dual free layer (DFL) TMR structures. The DFL TMR structures include one or more hard bias structures on the side of DLF. Additionally, one or more soft bias structures may also be present on a side of the DFL. Two resistors will have identical hard bias material while two other resistors will have hard bias material that is identical to each other, yet different when compared to the first two resistors. The hard bias materials will provide opposite magnetizations that will provide opposite bias fields that result in two different magnetoresistance responses for the DFL TMR.
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