公开(公告)号：US10903034B2

公开(公告)日：2021-01-26

申请号：US16342475

申请日：2017-10-17

Applicant: WiSys Technology Foundation, Inc.

Inventor： Charles D Nelson ,  Harold T Evensen

IPC: H01J21/10 ,  H01J9/02 ,  H01J19/24 ,  H01J19/38 ,  H01L51/00 ,  H01L51/05 ,  H01J1/304 ,  H01J19/82 ,  H01J9/18 ,  H01L51/10

Abstract: A field emission transistor uses carbon nanotubes positioned to extend along a substrate plane rather than perpendicularly thereto. The carbon nanotubes may be pre-manufactured and applied to the substrate and then may be etched to create a gap between the carbon nanotubes and an anode through which electrons may flow by field emission. A planar gate may be positioned beneath the gap to provide a triode structure.