专利检索 ap:("William Everson" OR "David Snyder" OR "Richard Gamble" OR "Volker Heydemann") AND inv:"Volker Heydemann" 第 1 页

1.

发明申请
Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers 审中-公开
标题翻译：在半绝缘碳化硅晶片上生产无损伤表面的抛光工艺

公开(公告)号：US20060108325A1

公开(公告)日：2006-05-25

申请号：US11271737

申请日：2005-11-14

申请人： William Everson , David Snyder , Richard Gamble , Volker Heydemann

发明人： William Everson , David Snyder , Richard Gamble , Volker Heydemann

IPC分类号： C09K13/00 , B44C1/22 , C23F1/00

CPC分类号： C09K3/1463 , C09G1/02 , C30B29/36 , H01L21/02024 , H01L29/1608

摘要： A polishing mixture and related method of polishing a material wafer surface, such as silicon carbide, are disclosed. The polishing mixture comprises; an abrasive and an oxidizer mixed in an acidic solution. Alumina may be used as the abrasive and the polishing mixture may have a pH less than or equal to seven (7).

摘要翻译： 公开了抛光混合物和抛光材料晶片表面的相关方法，例如碳化硅。抛光混合物包括：在酸性溶液中混合的研磨剂和氧化剂。氧化铝可用作研磨剂，抛光混合物可具有小于或等于七（7）的pH。