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公开(公告)号:US4478345A
公开(公告)日:1984-10-23
申请号:US508116
申请日:1983-06-27
Applicant: William J. Edinger
Inventor: William J. Edinger
CPC classification number: F17C13/084 , F17C2201/0109 , F17C2201/032 , F17C2201/058 , F17C2205/0173 , F17C2205/0176 , F17C2205/018 , F17C2205/0308 , F17C2205/0329 , F17C2221/035 , F17C2223/0153 , F17C2223/033 , Y10T137/7062 , Y10T137/86332
Abstract: A self-containment for a gas cylinder comprising a coaxial annular wall welded to and around the top of the cylinder itself. A circular closure with an exhaust duct opening from it fits over the annular wall and is secured tightly to it with a seal ring between, by a releasable tension band.
Abstract translation: 用于气瓶的自密封件包括焊接到气缸本身的顶部并且围绕气缸本身的顶部的同轴环形壁。 具有从其开口的排气管道的圆形封闭件安装在环形壁上并且通过可释放的张力带之间通过密封环紧固地固定在其上。
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公开(公告)号:US07229555B1
公开(公告)日:2007-06-12
申请号:US10767119
申请日:2004-01-28
Applicant: William J. Edinger
Inventor: William J. Edinger
CPC classification number: B03C3/017 , B01D61/025 , B01D63/10 , B01D65/08 , B01D2313/345 , B01D2317/022 , B01D2321/22 , C02F1/441 , C02F2103/08 , C02F2201/001 , Y02A20/131
Abstract: A reverse osmosis system is subject to long periods of non-use in which water stands inside. A hollow-cylindrical spiral-wound type reverse osmosis membrane is disposed inside a cylindrical pressure vessel. An electrostatic-field generator is disposed inside the pressure vessel. A high voltage direct current source powers the electrostatic-field generator and a voltage gradient is constantly produced inside the volume of the pressure vessel. Such gradients cut through the fabric of the reverse osmosis membrane layers. The voltage to the electrostatic-field generator is kept on at all times, and prevents biofouling, even during lay-up periods. Current flow through the electrostatic-field generator is insignificant because it acts as a high-Z capacitor.
Abstract translation: 反渗透系统经受长时间的不使用,其中水站在里面。 中空圆柱形螺旋缠绕型反渗透膜设置在圆筒形压力容器内。 静电场发生器设置在压力容器内。 高压直流电源为静电场发生器供电,并且在压力容器的体积内不断产生电压梯度。 这种梯度穿过反渗透膜层的织物。 静电场发生器的电压始终保持,即使在铺设期间也能防止生物污染。 通过静电场发生器的电流不重要,因为它充当高Z电容。
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