公开(公告)号：US20050078293A1

公开(公告)日：2005-04-14

申请号：US10684794

申请日：2003-10-14

申请人： Jeffrey Mackey ,  William Stanton

发明人： Jeffrey Mackey ,  William Stanton

IPC分类号： G03F7/20 ,  G03B27/72

CPC分类号： G03F7/70291 ,  G03F7/70091 ,  G03F7/70141 ,  G03F7/70566

摘要： Methods and apparatuses for controlling characteristics of radiation directed to a microlithographic workpiece are disclosed. An apparatus in accordance with one embodiment of the invention includes a source of radiation positioned to direct a radiation beam having an amplitude distribution, a phase distribution, and a polarization distribution, toward a workpiece. An adaptive structure can be positioned in a path of the radiation beam and can have a plurality of independently controllable and selectively radiation transmissible elements, each configured to change at least one of the amplitude distribution, the phase distribution and the polarization distribution of the radiation beam. A controller can be operatively coupled to the adaptive structure to direct the elements of the adaptive structure to change from one state to any of a plurality of available other states. Accordingly, the adaptive structure can provide radiation beams having a variety of continuously variable distributions for a variety of radiation beam characteristics.

公开(公告)号：US20060216844A1

公开(公告)日：2006-09-28

申请号：US11435796

申请日：2006-05-16

申请人： William Stanton ,  Jeffrey Mackey

发明人： William Stanton ,  Jeffrey Mackey

IPC分类号： H01L21/00

CPC分类号： G03F7/70091 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70158

摘要： A method and structure for optimizing an optical lithography illumination source comprises a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Descriptions and depictions of specific DOE's are provided. Additionally, a pupilgram having a particular pattern, and methods for forming the pupilgram, are discussed.

公开(公告)号：US20060176462A1

公开(公告)日：2006-08-10

申请号：US11378229

申请日：2006-03-17

申请人： Jeffrey Mackey ,  William Stanton

发明人： Jeffrey Mackey ,  William Stanton

IPC分类号： G03B27/72

CPC分类号： G03F7/70291 ,  G03F7/70091 ,  G03F7/70141 ,  G03F7/70566

摘要： Methods and apparatuses for controlling characteristics of radiation directed to a microlithographic workpiece are disclosed. An apparatus in accordance with one embodiment of the invention includes a source of radiation positioned to direct a radiation beam having an amplitude distribution, a phase distribution, and a polarization distribution, toward a workpiece. An adaptive structure can be positioned in a path of the radiation beam and can have a plurality of independently controllable and selectively radiation transmissible elements, each configured to change at least one of the amplitude distribution, the phase distribution and the polarization distribution of the radiation beam. A controller can be operatively coupled to the adaptive structure to direct the elements of the adaptive structure to change from one state to any of a plurality of available other states. Accordingly, the adaptive structure can provide radiation beams having a variety of continuously variable distributions for a variety of radiation beam characteristics.

摘要翻译： 公开了用于控制朝向微光刻工件的辐射特性的方法和装置。 根据本发明的一个实施例的装置包括辐射源，其定位成将具有振幅分布，相位分布和偏振分布的辐射束引向工件。 自适应结构可以位于辐射束的路径中并且可以具有多个独立可控和选择性的辐射可透射元件，每个元件被配置为改变辐射束的幅度分布，相位分布和偏振分布中的至少一个 。 控制器可以可操作地耦合到自适应结构，以引导自适应结构的元件从一个状态改变为多个可用的其他状态中的任何一个状态。 因此，自适应结构可以提供具有用于各种辐射束特性的各种连续可变分布的辐射束。

公开(公告)号：US20050200824A1

公开(公告)日：2005-09-15

申请号：US11125496

申请日：2005-05-10

申请人： Jeffrey Mackey ,  William Stanton

发明人： Jeffrey Mackey ,  William Stanton

IPC分类号： G03F7/20 ,  G03B27/72

CPC分类号： G03F7/70291 ,  G03F7/70091 ,  G03F7/70141 ,  G03F7/70566

摘要： Methods and apparatuses for controlling characteristics of radiation directed to a microlithographic workpiece are disclosed. An apparatus in accordance with one embodiment of the invention includes a source of radiation positioned to direct a radiation beam having an amplitude distribution, a phase distribution, and a polarization distribution, toward a workpiece. An adaptive structure can be positioned in a path of the radiation beam and can have a plurality of independently controllable and selectively radiation transmissible elements, each configured to change at least one of the amplitude distribution, the phase distribution and the polarization distribution of the radiation beam. A controller can be operatively coupled to the adaptive structure to direct the elements of the adaptive structure to change from one state to any of a plurality of available other states. Accordingly, the adaptive structure can provide radiation beams having a variety of continuously variable distributions for a variety of radiation beam characteristics.

摘要翻译： 公开了用于控制朝向微光刻工件的辐射特性的方法和装置。 根据本发明的一个实施例的装置包括辐射源，其定位成将具有振幅分布，相位分布和偏振分布的辐射束引向工件。 自适应结构可以位于辐射束的路径中，并且可以具有多个独立可控和选择性的辐射可透射元件，每个元件被配置为改变辐射束的幅度分布，相位分布和偏振分布中的至少一个 。 控制器可以可操作地耦合到自适应结构，以引导自适应结构的元件从一个状态改变为多个可用的其他状态中的任何一个状态。 因此，自适应结构可以提供具有用于各种辐射束特性的各种连续可变分布的辐射束。

公开(公告)号：US20080043214A1

公开(公告)日：2008-02-21

申请号：US11858419

申请日：2007-09-20

申请人： Jeffrey Mackey ,  William Stanton

发明人： Jeffrey Mackey ,  William Stanton

IPC分类号： G03B27/72 ,  G03B27/54

CPC分类号： G03F7/70158 ,  G03F7/701

摘要： A method and structure for optimizing an optical lithography illumination source may include a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Description and depiction of a specific DOE for a specific pattern is provided. Additionally, a pupilgram having a particular pattern, and methods for providing a light output which forms the pupilgram, are disclosed.

摘要翻译： 用于优化光学光刻照明源的方法和结构可以包括在半导体晶片上的光致抗蚀剂层的曝光期间插入在照明器和透镜之间的成形衍射光学元件（DOE）。 在某些情况下，DOE可以增加焦点深度，提高标准化图像对数斜率，并提高图案保真度。 DOE根据要暴露的特定图案进行定制。 提供了特定模式的特定DOE的描述和描述。 此外，公开了具有特定图案的光瞳图，以及提供形成瞳孔图的光输出的方法。

公开(公告)号：US20060158633A1

公开(公告)日：2006-07-20

申请号：US11038673

申请日：2005-01-19

申请人： Jeffrey Mackey ,  William Stanton

发明人： Jeffrey Mackey ,  William Stanton

IPC分类号： G03B27/54

CPC分类号： G03F7/70158 ,  G03F7/701

摘要： A method and structure for optimizing an optical lithography illumination source comprises a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Description and depiction of a specific DOE for a specific pattern is provided. Additionally, a pupilgram having a particular pattern, and methods for providing a light output which forms the pupilgram, are disclosed.

摘要翻译： 用于优化光学光刻照明源的方法和结构包括在半导体晶片上的光致抗蚀剂层曝光期间插入在照明器和透镜之间的成形衍射光学元件（DOE）。 在某些情况下，DOE可以增加焦点深度，提高标准化图像对数斜率，并提高图案保真度。 DOE根据要暴露的特定图案进行定制。 提供了特定模式的特定DOE的描述和描述。 此外，公开了具有特定图案的光瞳图，以及提供形成瞳孔图的光输出的方法。

公开(公告)号：US20050195379A1

公开(公告)日：2005-09-08

申请号：US10794339

申请日：2004-03-05

申请人： William Stanton ,  Jeffrey Mackey

发明人： William Stanton ,  Jeffrey Mackey

IPC分类号： G03B27/54 ,  G03F7/20

CPC分类号： G03F7/70091 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70158

摘要： A method and structure for optimizing an optical lithography illumination source comprises a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Descriptions and depictions of specific DOE's are provided. Additionally, a pupilgram having a particular pattern, and methods for forming the pupilgram, are discussed.

摘要翻译： 用于优化光学光刻照明源的方法和结构包括在半导体晶片上的光致抗蚀剂层曝光期间插入在照明器和透镜之间的成形衍射光学元件（DOE）。 在某些情况下，DOE可以增加焦点深度，提高标准化图像对数斜率，并提高图案保真度。 DOE根据要暴露的特定图案进行定制。 提供具体DOE的描述和描述。 另外，讨论了具有特定图案的光瞳图，以及用于形成瞳孔图的方法。

公开(公告)号：US20080044630A1

公开(公告)日：2008-02-21

申请号：US11847411

申请日：2007-08-30

申请人： Kevin Lusk ,  William Stanton

发明人： Kevin Lusk ,  William Stanton

IPC分类号： B32B3/02 ,  B29C65/00

CPC分类号： B62D29/041 ,  B29C70/443 ,  B29C70/865 ,  B29L2031/608 ,  B62D25/087 ,  B62D25/20 ,  Y10T428/24612 ,  Y10T428/24653

摘要： A structural shear panel for forming a floor panel for support by a vehicle frame is formed by a composite of top and bottom sheets and a core with a vacuum infused resin. The panel is mainly planar and terminates at its side edges at a portion which lies in a common plane and portions are provided which are deformed out of the generally planar shape to form depending or elevated sections. The structure is formed on a generally flat plate defining the planar panel portion with removable sections to define the depending and elevated sections. Edge pieces are attached to the plate to define the edges of the panel. Accessories are attached to the panel without compressing the core by a base plate of the accessory which is bolted to a bracket which has a backer plate and collar through a hole in the panel.

摘要翻译： 用于形成用于车架支撑的地板镶板的结构剪切板通过顶片和底片与具有真空注入树脂的芯的复合形成。 面板主要是平面的，并且在其侧边缘处终止于位于公共平面中的部分，并且设置部分被变形为大致平面形状，以形成垂直或升高的部分。 该结构形成在限定平面板部分的大致平坦的板上，具有可移除部分以限定垂直和升高的部分。 边缘片连接到板上以限定面板的边缘。 附件被附接到面板上，而不是通过附件的底板压缩芯，该基板螺栓连接到支架上，该支架具有通过面板中的孔的支撑板和套环。

公开(公告)号：US20060093927A1

公开(公告)日：2006-05-04

申请号：US11305197

申请日：2005-12-19

申请人： Pary Baluswamy ,  William Stanton ,  William Baggenstoss

发明人： Pary Baluswamy ,  William Stanton ,  William Baggenstoss

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/36 ,  G03F1/26 ,  G03F7/70433

摘要： A semiconductor pattern mask that might otherwise exhibit three-fold symmetry, which could give rise to distorted semiconductor features in the presence of three-leaf aberration in the optical system used to expose a semiconductor wafer through the mask, is altered to break up the three-fold symmetry without altering the semiconductor features that are formed. This accomplished by adding features to the mask that break up the symmetry. One way of achieving that result is to make the added features of “sub-resolution” size that do not produce features on the exposed wafer. Another way of achieving that result is to change existing features that do form structures in such a way (e.g., with optical elements) that changes the relative phase, amplitude or other characteristic of light transmitted through those features.

公开(公告)号：US20050049839A1

公开(公告)日：2005-03-03

申请号：US10953982

申请日：2004-09-28

申请人： William Stanton

发明人： William Stanton

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G06F17/50 ,  G06F7/60 ,  G06F17/10

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441

摘要： The invention includes a method for placement of sidelobe inhibitors on a radiation-patterning tool. Elements of the tool are represented by design features in a modeling domain. The modeling domain is utilized to generate vectors spanning between edges of design features within a threshold spatial distance of one another. Locations of vector midpoints are identified. The locations are utilized in identifying areas where sidelobe overlap is likely. The areas are shifted from the modeling domain to a real domain, and in the real domain correspond to regions of the tool where sidelobe overlap is likely to occur. Sidelobe inhibitors are formed across at least some of the identified regions of the tool. The invention includes computer readable code that can enable a computer to determine locations for placement of the sidelobe inhibitors.

摘要翻译： 本发明包括一种将旁瓣抑制剂放置在辐射图案化工具上的方法。 该工具的元素由建模域中的设计特征表示。 建模域被用于在彼此的阈值空间距离内产生跨越设计特征的边缘之间的向量。 识别矢量中点的位置。 这些位置用于识别旁瓣重叠可能的区域。 这些区域从建模域移动到真实域，而实际域对应于可能发生旁瓣重叠的工具区域。 旁瓣抑制剂跨过工具的至少一些所识别的区域形成。 本发明包括计算机可读代码，其可以使得计算机能够确定放置旁瓣抑制剂的位置。