公开(公告)号：US20240347118A1

公开(公告)日：2024-10-17

申请号：US18319501

申请日：2023-05-18

Applicant: Winbond Electronics Corp.

Inventor： Lung-Chi Cheng ,  Shan-Hsuan Tsai ,  Ying-Shan Kuo ,  Ngatik Cheung ,  Ju-Chieh Cheng

IPC: G11C16/34 ,  G11C16/10

CPC classification number: G11C16/3459 ,  G11C16/102

Abstract: A memory device and an enhance programming method thereof are provided. The enhance programming method includes: performing program and verifying operations on a plurality of memory cell groups of a memory division, where each of the memory cell group corresponds to at least one byte; calculating a programming time for completing program operation of each of the memory cell groups; setting an indication flag when the programming time is larger than a preset threshold value; and, when the indication flag is in a setting state, increasing at least one of a plurality of program operation parameters, and performing an enhancement programming operation on the memory cell groups of the memory division.