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    CMOS IMAGE SENSOR WITH WIDE DYNAMIC RANGE
    2.
    发明申请
    CMOS IMAGE SENSOR WITH WIDE DYNAMIC RANGE 有权
    具有宽动态范围的CMOS图像传感器

    公开(公告)号：US20120223215A1

    公开(公告)日：2012-09-06

    申请号：US13470690

    申请日：2012-05-14

    Applicant: Won-Ho Lee

    Inventor： Won-Ho Lee

    IPC: H01L27/148

    CPC classification number: H01L27/14609 ,  H04N5/341 ,  H04N5/3745

    Abstract: The present invention relates a CMOS (Complementary Metal Oxide Semiconductor) image sensor capable of improving dynamic range by using an additional driver transistor. The CMOS image sensor according to the present invention has a pixel array which has a plurality of unit pixels each of which includes a photodiode and a fist transistor to act as a source follower buffer amplifier to amplify photogenerated charges accumulated in the photodiode. Also, the CMOS image sensor includes a second transistor for a buffer amplifier to amplify and output a gate input voltage in the unit pixel, wherein an output signal of the first transistor is applied to a gate of the second.

    Abstract translation: 本发明涉及能够通过使用额外的驱动晶体管来改善动态范围的CMOS（互补金属氧化物半导体）图像传感器。 根据本发明的CMOS图像传感器具有像素阵列，其具有多个单位像素，每个像素包括光电二极管和第一晶体管，用作源跟随缓冲放大器，以放大积聚在光电二极管中的光生电荷。 此外，CMOS图像传感器包括用于缓冲放大器的第二晶体管，用于放大并输出单位像素中的栅极输入电压，其中第一晶体管的输出信号施加到第二晶体管的栅极。

    Liquid crystal display device and method of fabricating the same
    3.
    发明授权
    Liquid crystal display device and method of fabricating the same 有权
    液晶显示装置及其制造方法

    公开(公告)号：US08130353B2

    公开(公告)日：2012-03-06

    申请号：US12005630

    申请日：2007-12-28

    Applicant: Won-Ho Lee

    Inventor： Won-Ho Lee

    IPC: G02F1/1333

    CPC classification number: G02F1/134363

    Abstract: A liquid crystal display device includes a gate line and a data line crossing each other to define a pixel region on a substrate; a thin film transistor connected to the gate and data lines; a pixel electrode in the pixel region and including a first pixel portion which has a plurality of bent portions and first and second pixel protrusion portions protruding from the bent portions alternately in an opposing direction; and a common electrode in the pixel region and including first and second common portions between which the first pixel portion is located, and first and second common protrusion portions protruding from the first and second common portions, respectively, alternately in a direction toward the bent portions.

    Abstract translation: 液晶显示装置包括彼此交叉的栅极线和数据线，以限定衬底上的像素区域; 连接到栅极和数据线的薄膜晶体管; 像素区域中的像素电极，并且包括具有多个弯曲部分的第一像素部分和在相反方向上交替地从弯曲部分突出的第一和第二像素突出部分; 以及像素区域中的公共电极，并且包括位于第一像素部分之间的第一和第二公共部分以及分别从第一和第二公共部分突出的第一和第二公共突出部分朝向弯曲部分的方向 。

    CMOS image sensor
    4.
    发明授权
    CMOS image sensor 有权
    CMOS图像传感器

    公开(公告)号：US08063423B2

    公开(公告)日：2011-11-22

    申请号：US11645515

    申请日：2006-12-27

    Applicant: Won-Ho Lee

    Inventor： Won-Ho Lee

    IPC: H01L31/062 ,  H01L31/113

    CPC classification number: H01L27/14614 ,  H01L21/28008 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/42372 ,  H04N5/3658 ,  H04N5/374

    Abstract: A CMOS image sensor includes a photodiode, a plurality of transistors for transferring charges accumulated at the photodiode to one column line, and a voltage dropping element connected to a gate electrode of at least one transistor among the plurality of transistors for expanding a saturation region of the transistor by dropping down a gate voltage inputted to the gate electrode of the at least one transistor.

    Abstract translation: CMOS图像传感器包括光电二极管，用于将在光电二极管处累积的电荷传送到一列列的多个晶体管，以及连接到多个晶体管中的至少一个晶体管的栅电极的降压元件，用于扩展 晶体管通过降低输入至少一个晶体管的栅电极的栅极电压。

    Method and apparatus for separating aromatic dialdehyde
    6.
    发明授权
    Method and apparatus for separating aromatic dialdehyde 有权
    分离芳香二醛的方法和装置

    公开(公告)号：US07740812B2

    公开(公告)日：2010-06-22

    申请号：US12155312

    申请日：2008-06-02

    Applicant: Jong-Hyun Chae ,  Won-Ho Lee ,  Dong-Il Lee ,  Hyun-Kyung Yoon

    Inventor： Jong-Hyun Chae ,  Won-Ho Lee ,  Dong-Il Lee ,  Hyun-Kyung Yoon

    IPC: B01J19/00 ,  C07C45/00 ,  C07C47/00 ,  F25J1/00 ,  F25J3/00

    CPC classification number: C07C47/544 ,  C07C45/36 ,  C07C45/81

    Abstract: The present invention relates to a method and an apparatus for continuously separating aromatic dialdehyde from a reaction mixture obtained by gas-phase oxidation of dimethylbenzene. The method for continuously separating aromatic dialdehyde includes the steps of congealing aromatic dialdehyde by cooling the gas-phase reaction mixture including the aromatic dialdehyde, which is obtained by gas-phase oxidation of dimethylbenzene, to 5-70° C. and separating the congealed aromatic dialdehyde from the remaining reaction mixture. Using the method and apparatus in accordance with the present invention, aromatic dialdehyde can be effectively and selectively separated from a reaction mixture obtained by gas-phase oxidation of dimethylbenzene in high yield.

    Abstract translation: 本发明涉及一种从二甲基苯气相氧化得到的反应混合物中连续分离芳香二醛的方法和装置。 连续分离芳香二醛的方法包括以下步骤：将通过二甲苯的气相氧化获得的包括芳香二醛的气相反应混合物冷却至5-70℃并分离凝固的芳族化合物 二醛从剩余的反应混合物中。 使用本发明的方法和装置，芳族二醛可以从通过二甲苯的气相氧化得到的反应混合物中以高收率有效地和选择性地分离出来。

    ARRAY SUBSTRATE FOR TRANSFLECTIVE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    ARRAY SUBSTRATE FOR TRANSFLECTIVE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20100141879A1

    公开(公告)日：2010-06-10

    申请号：US12628719

    申请日：2009-12-01

    Applicant: Joon-Dong Lee ,  Ki-Bok Park ,  Won-Ho Lee

    Inventor： Joon-Dong Lee ,  Ki-Bok Park ,  Won-Ho Lee

    IPC: G02F1/1335 ,  G02F1/13

    CPC classification number: G02F1/133555 ,  G02F1/133707

    Abstract: An array substrate for a transflective liquid crystal display device includes a substrate, first and second gate lines on the substrate along a first direction, a common line parallel to and between the first and second gate lines, a gate electrode connected to the first gate line, a gate insulating layer on the first and second gate lines, the gate electrode and the common line, a data line over the gate insulating layer and along a second direction, the data line crossing the first and second gate lines to define a pixel region, the pixel region divided into a transmissive area and a reflective area by the common line, a semiconductor layer on the gate insulating layer over the gate electrode, source and drain electrodes over the semiconductor layer and spaced apart each other, a first passivation layer over the data line, the source electrode and the drain electrode substantially all over the substrate, a reflective layer over the first passivation layer in the reflective area, a second passivation layer over the reflective layer and having a flat top surface in the reflective layer, a pixel electrode over the first and second passivation layers and connected to the drain electrode through a drain contact hole, the pixel electrode having a plate shape, a third passivation layer over the pixel electrode, and a common electrode over the third passivation layer substantially all over the substrate, the common electrode having first openings and second openings corresponding to the transmissive area and the reflective area, respectively, wherein the first openings are spaced apart from each other and are parallel to the data line, and the second openings are spaced apart from each other and are slant an a predetermined angle with respect to the data line, wherein first ends of the first openings overlap the second gate line, second ends of the first openings overlap the common line, first ends of the second openings overlap the common line, and second ends of the second openings overlap the first gate line.

    CMOS image sensor
    8.
    发明授权
    CMOS image sensor 失效
    CMOS图像传感器

    公开(公告)号：US07692226B2

    公开(公告)日：2010-04-06

    申请号：US11644937

    申请日：2006-12-26

    Applicant: Won-Ho Lee

    Inventor： Won-Ho Lee

    IPC: H01L31/062 ,  H01L31/113 ,  H01L27/10 ,  H01L29/73 ,  H01L31/06

    CPC classification number: H01L27/14603 ,  H01L27/14609 ,  H01L27/14645

    Abstract: A CMOS image sensor includes a photodiode, and a plurality of transistors for transferring charges accumulated at the photodiode to one column line, wherein at least one transistor among the plurality of transistors has a source region wider than a drain region, for increasing a driving current.

    Abstract translation: CMOS图像传感器包括光电二极管和用于将在光电二极管处累积的电荷传送到一列的多个晶体管，其中多个晶体管中的至少一个晶体管具有比漏极区宽的源极区，用于增加驱动电流 。

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