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    Method of forming phase change memory device
    1.
    发明申请
    Method of forming phase change memory device 审中-公开
    形成相变存储器件的方法

    公开(公告)号：US20100210068A1

    公开(公告)日：2010-08-19

    申请号：US12591772

    申请日：2009-12-01

    申请人： Won-jun Lee ,  Jin-woo Park ,  Byoung-moon Yoon ,  Cheol-woo Park

    发明人： Won-jun Lee ,  Jin-woo Park ,  Byoung-moon Yoon ,  Cheol-woo Park

    IPC分类号： H01L21/06

    CPC分类号： H01L45/143 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1675

    摘要： Provided is a method of forming a phase change memory device, the method including washing and rinsing a phase change device structure. A phase change material layer may be formed on a semiconductor substrate. The phase change material layer may be etched so as to form a phase change device structure. The semiconductor substrate on which the phase change device structure is formed may be washed using a washing solution including a reducing agent containing fluorine (F), a pH controller, a dissolution agent and water. In addition, the semiconductor substrate on which the washing is performed may be rinsed.

    摘要翻译： 提供一种形成相变存储器件的方法，该方法包括洗涤和漂洗相变装置结构。 相变材料层可以形成在半导体衬底上。 相变材料层可以被蚀刻以形成相变器件结构。 可以使用包含含氟还原剂（F），pH控制剂，溶解剂和水的洗涤溶液洗涤其上形成相变器件结构的半导体衬底。 此外，可以冲洗其上进行洗涤的半导体衬底。

    METHOD OF MANUFACTURING CMOS TRANSISTOR
    2.
    发明申请
    METHOD OF MANUFACTURING CMOS TRANSISTOR 审中-公开
    制造CMOS晶体管的方法

    公开(公告)号：US20100178754A1

    公开(公告)日：2010-07-15

    申请号：US12479112

    申请日：2009-06-05

    申请人： Jun-youl Yang ,  Byoung-moon Yoon ,  Cheol-woo Park ,  Won-jun Lee ,  Ki-hyung Ko

    发明人： Jun-youl Yang ,  Byoung-moon Yoon ,  Cheol-woo Park ,  Won-jun Lee ,  Ki-hyung Ko

    IPC分类号： H01L21/8238 ,  H01L21/20

    CPC分类号： H01L21/823828 ,  H01L21/32155 ,  H01L21/823842 ,  H01L29/66545

    摘要： A method of manufacturing a complementary metal-oxide semiconductor (CMOS) transistor includes: forming a semiconductor layer in which an n-MOS transistor region and a p-MOS transistor region are defined; forming an insulation layer on the semiconductor layer; forming a conductive layer on the insulation layer; forming a mask pattern exposing the n-MOS transistor region, on the conductive layer; generating a damage region in an upper portion of the conductive layer by implanting impurities in the conductive layer of the n-MOS transistor region using the mask pattern as a mask; removing the mask pattern; removing the damage region; and patterning the conductive layer to form an n-MOS transistor gate and a p-MOS transistor gate. Accordingly, gate thinning and formation of a step between the n-MOS transistor region gate and the p-MOS transistor region gate can be prevented.

    摘要翻译： 制造互补金属氧化物半导体（CMOS）晶体管的方法包括：形成其中限定了n-MOS晶体管区域和p-MOS晶体管区域的半导体层; 在所述半导体层上形成绝缘层; 在绝缘层上形成导电层; 在所述导电层上形成暴露所述n-MOS晶体管区域的掩模图案; 通过使用掩模图案作为掩模在n-MOS晶体管区域的导电层中注入杂质，在导电层的上部产生损伤区域; 去除掩模图案; 去除损伤区域; 以及图案化导电层以形成n-MOS晶体管栅极和p-MOS晶体管栅极。 因此，可以防止栅极间化和在n-MOS晶体管区域栅极和p-MOS晶体管区域栅极之间形成台阶。

    Method of manufacturing a semiconductor device
    3.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07151043B2

    公开(公告)日：2006-12-19

    申请号：US11082616

    申请日：2005-03-17

    申请人： Tae-hyun Kim ,  Byoung-moon Yoon ,  Won-jun Lee ,  Yong-sun Ko ,  Kyung-hyun Kim

    发明人： Tae-hyun Kim ,  Byoung-moon Yoon ,  Won-jun Lee ,  Yong-sun Ko ,  Kyung-hyun Kim

    IPC分类号： H01L21/76

    CPC分类号： H01L27/11521 ,  H01L21/76224 ,  H01L27/115

    摘要： Methods of manufacturing a semiconductor device are provided. A trench is formed in a semiconductor substrate. A first field oxide layer is formed that partially fills the trench. The first field oxide layer defines an active region of the substrate that is adjacent to the trench. An upper portion of sidewalls of the trench extends upward beyond a surface of the first field oxide layer. A first liner is formed on the first field oxide layer and on the portion of the sidewalls of the trench that extend upward beyond the first field oxide layer. A second field oxide layer is formed on the first liner and fills the trench. The second field oxide layer and the first liner are each partially removed to expose a top adjacent surface and upper sidewalls of the trench along the active region of the substrate. A dielectric layer is formed on the exposed top adjacent surface and upper sidewalls of the trench. A gate electrode is formed on the dielectric layer.

    摘要翻译： 提供制造半导体器件的方法。 在半导体衬底中形成沟槽。 形成部分填充沟槽的第一场氧化物层。 第一场氧化物层限定与沟槽相邻的衬底的有源区。 沟槽的侧壁的上部向上延伸超过第一场氧化物层的表面。 第一衬垫形成在第一场氧化物层上并且在沟槽的侧壁的部分上方向上延伸超过第一场氧化物层。 在第一衬垫上形成第二场氧化物层并填充沟槽。 每个部分去除第二场氧化物层和第一衬里以沿着衬底的有源区域暴露沟槽的顶部相邻表面和上侧壁。 介电层形成在沟槽的暴露的顶部相邻表面和上侧壁上。 在电介质层上形成栅电极。

    Method of manufacturing a semiconductor device
    4.
    发明申请
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US20050266647A1

    公开(公告)日：2005-12-01

    申请号：US11082616

    申请日：2005-03-17

    申请人： Tae-hyun Kim ,  Byoung-moon Yoon ,  Won-jun Lee ,  Yong-sun Ko ,  Kyung-hyun Kim

    发明人： Tae-hyun Kim ,  Byoung-moon Yoon ,  Won-jun Lee ,  Yong-sun Ko ,  Kyung-hyun Kim

    IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/8247 ,  H01L27/115

    CPC分类号： H01L27/11521 ,  H01L21/76224 ,  H01L27/115

    摘要： Methods of manufacturing a semiconductor device are provided. A trench is formed in a semiconductor substrate. A first field oxide layer is formed that partially fills the trench. The first field oxide layer defines an active region of the substrate that is adjacent to the trench. An upper portion of sidewalls of the trench extends upward beyond a surface of the first field oxide layer. A first liner is formed on the first field oxide layer and on the portion of the sidewalls of the trench that extend upward beyond the first field oxide layer. A second field oxide layer is formed on the first liner and fills the trench. The second field oxide layer and the first liner are each partially removed to expose a top adjacent surface and upper sidewalls of the trench along the active region of the substrate. A dielectric layer is formed on the exposed top adjacent surface and upper sidewalls of the trench. A gate electrode is formed on the dielectric layer.

    摘要翻译： 提供制造半导体器件的方法。 在半导体衬底中形成沟槽。 形成部分填充沟槽的第一场氧化物层。 第一场氧化物层限定与沟槽相邻的衬底的有源区。 沟槽的侧壁的上部向上延伸超过第一场氧化物层的表面。 第一衬垫形成在第一场氧化物层上并且在沟槽的侧壁的部分上方向上延伸超过第一场氧化物层。 在第一衬垫上形成第二场氧化物层并填充沟槽。 每个部分去除第二场氧化物层和第一衬里以沿着衬底的有源区域暴露沟槽的顶部相邻表面和上侧壁。 介电层形成在沟槽的暴露的顶部相邻表面和上侧壁上。 在电介质层上形成栅电极。

    Method for preparing inorganic-nanostructure composite material, method for preparing carbon nanotube composite using same, and carbon nanotube composite prepared thereby
    7.
    发明授权
    Method for preparing inorganic-nanostructure composite material, method for preparing carbon nanotube composite using same, and carbon nanotube composite prepared thereby 有权
    制备无机纳米结构复合材料的方法，使用其制备碳纳米管复合材料的方法和由此制备的碳纳米管复合材料

    公开(公告)号：US09375751B2

    公开(公告)日：2016-06-28

    申请号：US13704611

    申请日：2011-11-29

    申请人： Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

    发明人： Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

    IPC分类号： B05D1/18 ,  B82Y40/00 ,  C01B31/02 ,  B82Y30/00 ,  B05D3/10 ,  B05D3/00

    CPC分类号： B05D1/18 ,  B05D3/002 ,  B05D3/104 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/168 ,  Y10T428/2918 ,  Y10T428/2991

    摘要： A method for manufacturing an inorganic-nano structure composite, a method for manufacturing a cabon nanotube composite by using the same, and a carbon nanotube composite manufactured by the same are provided. The method for manufacturing the inorganic-nano structure composite comprises a step of doping pentavalent elements on the nanostructure; and a step of growing the inorganic material from the doping points of the pentavalent elements by dipping the nanostructure on which the pentavalent elements are doped into a precursor solution of the inorganic material, and according to the present invention the pentavalent elements such as nitrogen are doped on the nanostructure and is utilized as the crystallization point of the inorganic material, instead of forming the separate coating layer to the organic-based nanostructure, or binding the binding group to the surface.

    摘要翻译： 提供一种无机纳米结构复合体的制造方法，使用该方法制造碳纳米管复合体的方法和由其制造的碳纳米管复合体。 制备无机纳米结构复合材料的方法包括在纳米结构上掺杂五价元素的步骤; 以及通过将掺杂有五价元素的纳米结构浸渍在无机材料的前体溶液中，从五价元素的掺杂点生长无机材料的步骤，根据本发明，将五价元素如氮掺杂 并且被用作无机材料的结晶点，而不是形成分离的涂层到有机基纳米结构，或将结合基团结合到表面。

    METHOD FOR PREPARING INORGANIC-NANOSTRUCTURE COMPOSITE MATERIAL, METHOD FOR PREPARING CARBON NANOTUBE COMPOSITE USING SAME, AND CARBON NANOTUBE COMPOSITE PREPARED THEREBY
    8.
    发明申请
    METHOD FOR PREPARING INORGANIC-NANOSTRUCTURE COMPOSITE MATERIAL, METHOD FOR PREPARING CARBON NANOTUBE COMPOSITE USING SAME, AND CARBON NANOTUBE COMPOSITE PREPARED THEREBY 有权
    制备无机纳米结构复合材料的方法，使用其制备碳纳米管复合材料的方法和制备的碳纳米管复合材料

    公开(公告)号：US20130089735A1

    公开(公告)日：2013-04-11

    申请号：US13704611

    申请日：2011-11-29

    申请人： Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

    发明人： Sang-Ouk Kim ,  Won-jun Lee ,  Duck-hyun Lee ,  Jin-ah Lee

    IPC分类号： B05D1/18

    CPC分类号： B05D1/18 ,  B05D3/002 ,  B05D3/104 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/168 ,  Y10T428/2918 ,  Y10T428/2991

    摘要： A method for manufacturing an inorganic-nano structure composite, a method for manufacturing a cabon nanotube composite by using the same, and a carbon nanotube composite manufactured by the same are provided. The method for manufacturing the inorganic-nano structure composite comprises a step of doping pentavalent elements on the nanostructure; and a step of growing the inorganic material from the doping points of the pentavalent elements by dipping the nanostructure on which the pentavalent elements are doped into a precursor solution of the inorganic material, and according to the present invention the pentavalent elements such as nitrogen are doped on the nanostructure and is utilized as the crystallization point of the inorganic material, instead of forming the separate coating layer to the organic-based nanostructure, or binding the binding group to the surface.

    摘要翻译： 提供一种无机纳米结构复合体的制造方法，使用该方法制造碳纳米管复合体的方法和由其制造的碳纳米管复合体。 制备无机纳米结构复合材料的方法包括在纳米结构上掺杂五价元素的步骤; 以及通过将掺杂有五价元素的纳米结构浸渍在无机材料的前体溶液中，从五价元素的掺杂点生长无机材料的步骤，根据本发明，将五价元素如氮掺杂 并且被用作无机材料的结晶点，而不是形成分离的涂层到有机基纳米结构，或将结合基团结合到表面。