公开(公告)号：US06621943B1

公开(公告)日：2003-09-16

申请号：US09590714

申请日：2000-06-08

申请人： Woo Sik Yoo ,  Kitaek Kang ,  Taro Yamazaki

发明人： Woo Sik Yoo ,  Kitaek Kang ,  Taro Yamazaki

IPC分类号： G06K920

CPC分类号： G01D5/39

摘要： An improved system and method for obtaining data related to the operation of a processing system which converts from analog measurement data, usually obtained from meters and gages, to digital data. Visual images of various types of measuring instruments are collected and used for measuring a process functionality. An image sensor provides an image of a first feature of the measuring instrument. The image data is processed by an image processor, which is operable to detect a first feature and determine its position relative to a second feature of the measuring instrument. The difference in the relative positions (measured distance) can then be compared to a predetermined or expected value. If the measured and expected values are not substantially the same, a signal can be generated which instructs a controller to adjust the process functionality until the measured value reaches the expected value.

摘要翻译： 一种改进的系统和方法，用于获得与通常从米和量规获得的模拟测量数据转换为数字数据的处理系统的操作相关的数据。 收集各种类型的测量仪器的视觉图像并用于测量过程功能。 图像传感器提供测量仪器的第一特征的图像。 图像数据由图像处理器处理，图像处理器可操作以检测第一特征并确定其相对于测量仪器的第二特征的位置。 然后可以将相对位置（测量距离）的差异与预定值或预期值进行比较。 如果测量值和期望值基本上不相同，则可以产生指示控制器调整过程功能直到测量值达到预期值的信号。

公开(公告)号：US20080206897A1

公开(公告)日：2008-08-28

申请号：US11679633

申请日：2007-02-27

申请人： Woo Sik Yoo ,  Kitaek Kang

发明人： Woo Sik Yoo ,  Kitaek Kang

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  B23K26/0604 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50

摘要： Methods for processing semiconductor materials and substrates with a focused or collimated light beam. Light may be directed on a sample to alter material properties at a depth below the surface. The focused light beam has a peak power density positioned at a selected depth, and absorption of light energy, resulting from selection of wavelength and optical characteristics of the substrate as a function of depth, results in process effects taking place over a preferred limited range of depth. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the light beam density in the vicinity of the focused beam spot. The wavelength may be selected to be appropriate for the process effect chosen. The beam may be scanned over the substrate to selectively provide processing effects.

摘要翻译： 用聚焦或准直光束处理半导体材料和基板的方法。 光可以引导到样品上以在表面下方的深度改变材料性质。 聚焦光束具有位于选定深度处的峰值功率密度，并且由于选择作为深度的函数的衬底的波长和光学特性而产生的光能的吸收导致在优选的有限范围内发生的过程效应 深度。 例如，可以在受聚焦束斑附近的光束密度限制的尺寸下实现诸如固化，退火，注入激活，选择性熔融，沉积和化学反应的过程效应。 可以选择波长适合于所选择的处理效果。 可以在衬底上扫描光束以选择性地提供处理效果。

公开(公告)号：US06591161B2

公开(公告)日：2003-07-08

申请号：US09773034

申请日：2001-01-31

申请人： Woo Sik Yoo ,  Kitaek Kang

发明人： Woo Sik Yoo ,  Kitaek Kang

IPC分类号： G06F700

CPC分类号： H01L21/681 ,  H01L21/67796 ,  Y10S414/136 ,  Y10S414/137

摘要： A robot wafer alignment tool uses a reflector mounted on a multi-axis robot to determine the position of the robot or other objects within a chamber. The reflector reflects images to at least one camera from an area or object of interest in the chamber.

摘要翻译： 机器人晶片对准工具使用安装在多轴机器人上的反射镜来确定机器人或其他物体在腔室内的位置。 反射器将图像从室中的感兴趣的区域或物体反射到至少一个照相机。

公开(公告)号：US07718554B2

公开(公告)日：2010-05-18

申请号：US11673306

申请日：2007-02-09

申请人： Woo Sik Yoo ,  Kitaek Kang

发明人： Woo Sik Yoo ,  Kitaek Kang

IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L21/324 ,  H01L21/477 ,  H01L21/331

CPC分类号： G02B26/101 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/78

摘要： Methods and systems for processing semiconductor materials with a focused laser beam. Laser light may be focused on a sample to alter material properties at the sample surface. The laser beam has a peak power, a pulse width and is modulated to a selected duty cycle to provide a selected energy per pulse and average power to the sample surface. The focused laser beam is scanned over the sample surface to provide controlled process effects limited to the area of the beam diameter and along the scanning path. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the focused beam diameter. The wavelength may be selected to be appropriate for the process effect chosen.

摘要翻译： 用聚焦激光束处理半导体材料的方法和系统。 激光可以聚焦在样品上以改变样品表面的材料性质。 激光束具有峰值功率，脉冲宽度，并被调制到选定的占空比，以提供每脉冲所选择的能量和对样品表面的平均功率。 聚焦的激光束被扫描在样品表面上，以提供限制于光束直径的面积并沿着扫描路径的受控过程效应。 例如，可以在由聚焦光束直径限制的尺寸下实现诸如固化，退火，注入激活，选择性熔融，沉积和化学反应的过程效应。 可以选择波长适合于所选择的处理效果。

公开(公告)号：US06516244B1

公开(公告)日：2003-02-04

申请号：US09648833

申请日：2000-08-25

申请人： Woo Sik Yoo ,  Kitaek Kang

发明人： Woo Sik Yoo ,  Kitaek Kang

IPC分类号： G06F700

CPC分类号： H01L21/681 ,  Y10S414/136

摘要： A system and associated method for aligning semiconductor wafers and wafer-like objects relative to a transport mechanism. An image of, for example, a wafer is acquired, digitized, and stored in a computer as an array of pixels, each pixel representing a point on the image. Data points along the edge of the wafer are extracted and used to geometrically estimate the center of the wafer object. The estimated wafer center is then compared to the position of a predetermined reference position to determine an offset. Using this information, the wafer transport mechanism can then be re-adjusted to pick up the wafer on the corrected center.

摘要翻译： 一种用于相对于传送机构对准半导体晶片和晶片状物体的系统和相关方法。 获取例如晶片的图像，数字化并存储在计算机中作为像素阵列，每个像素表示图像上的点。 提取沿着晶片边缘的数据点并用于几何估计晶片对象的中心。 然后将估计的晶片中心与预定基准位置的位置进行比较以确定偏移。 使用该信息，然后可以重新调整晶片输送机构以拾取校正中心上的晶片。

公开(公告)号：US07599048B2

公开(公告)日：2009-10-06

申请号：US11689419

申请日：2007-03-21

申请人： Woo Sik Yoo ,  Kitaek Kang

发明人： Woo Sik Yoo ,  Kitaek Kang

IPC分类号： G01J3/443 ,  G01N21/63

CPC分类号： G01N21/718 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/40 ,  B23K2103/50 ,  G01N2021/1782 ,  G01N2021/8416 ,  H01L21/268

摘要： Methods and systems for control and monitoring processing of semiconductor materials with a focused laser beam. Laser light may be focused on a sample to excite optical emission at the sample surface during processing, which may include laser processing. Optical emission spectra produced may be analyzed for various properties effectively during the process. For example, process effects such as chemical composition analysis, species concentration, depth profiling, homogeneity characterization and mapping, purity, and reactivity may be monitored by optical spectral analysis. The wavelength may be selected to be appropriate for the process effect chosen.

摘要翻译： 用聚焦激光束控制和监测半导体材料的方法和系统。 激光可以聚焦在样品上以在处理期间激发样品表面的光发射，其可以包括激光加工。 可以在该过程中有效地分析所产生的光发射光谱的各种性质。 例如，可以通过光谱分析来监测诸如化学成分分析，物质浓度，深度分布，均匀性表征和测绘，纯度和反应性的过程效应。 可以选择波长适合于所选择的处理效果。

公开(公告)号：US20080254553A1

公开(公告)日：2008-10-16

申请号：US11734195

申请日：2007-04-11

申请人： Woo Sik Yoo ,  Kitaek Kang

发明人： Woo Sik Yoo ,  Kitaek Kang

IPC分类号： H01L21/00

CPC分类号： H01L22/14 ,  G01N21/718 ,  G01R31/2656

摘要： Methods and systems for in situ process control, monitoring, optimization and fabrication of devices and components on semiconductor and related material substrates includes a light illumination system and electrical probe circuitry. The light illumination system may include a light source and detectors to measure optical properties of the in situ substrate while the electrical probe circuitry causes one or more process steps due to applied levels of voltage or current signals. The electrical probe circuitry may measure changes in electrical properties of the substrate due to the light illumination, the applied voltages and/or currents or other processes. The in situ process may be controlled on the basis of the optical and electrical measurements.

摘要翻译： 用于半导体和相关材料基板上的器件和部件的原位过程控制，监测，优化和制造的方法和系统包括光照系统和电探针电路。 光照射系统可以包括光源和用于测量原位衬底的光学性质的检测器，而电探针电路由于施加的电压或电流信号的电平而导致一个或多个处理步骤。 电探针电路可以测量由于光照射，施加的电压和/或电流或其它过程而导致的衬底的电性能的变化。 可以基于光学和电学测量来控制原位过程。

公开(公告)号：US20080191121A1

公开(公告)日：2008-08-14

申请号：US11673306

申请日：2007-02-09

申请人： Woo Sik Yoo ,  Kitaek Kang

发明人： Woo Sik Yoo ,  Kitaek Kang

IPC分类号： G02B27/40 ,  H01L21/00 ,  G21K5/04

CPC分类号： G02B26/101 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/40 ,  B23K2103/50 ,  H01L21/78

摘要： Methods and systems for processing semiconductor materials with a focused laser beam. Laser light may be focused on a sample to alter material properties at the sample surface. The laser beam has a peak power, a pulse width and is modulated to a selected duty cycle to provide a selected energy per pulse and average power to the sample surface. The focused laser beam is scanned over the sample surface to provide controlled process effects limited to the area of the beam diameter and along the scanning path. For example, process effects such as curing, annealing, implant activation, selective melting, deposition and chemical reaction may be achieved at dimensions limited by the focused beam diameter. The wavelength may be selected to be appropriate for the process effect chosen.

摘要翻译： 用聚焦激光束处理半导体材料的方法和系统。 激光可以聚焦在样品上以改变样品表面的材料性质。 激光束具有峰值功率，脉冲宽度，并被调制到选定的占空比，以提供每脉冲所选择的能量和对样品表面的平均功率。 聚焦的激光束被扫描在样品表面上，以提供限制于光束直径的面积并沿着扫描路径的受控过程效应。 例如，可以在由聚焦光束直径限制的尺寸下实现诸如固化，退火，注入激活，选择性熔融，沉积和化学反应的过程效应。 可以选择波长适合于所选择的处理效果。

公开(公告)号：US07816152B2

公开(公告)日：2010-10-19

申请号：US11734195

申请日：2007-04-11

申请人： Woo Sik Yoo ,  Kitaek Kang

发明人： Woo Sik Yoo ,  Kitaek Kang

IPC分类号： H01L21/00

CPC分类号： H01L22/14 ,  G01N21/718 ,  G01R31/2656

摘要： Methods and systems for in situ process control, monitoring, optimization and fabrication of devices and components on semiconductor and related material substrates includes a light illumination system and electrical probe circuitry. The light illumination system may include a light source and detectors to measure optical properties of the in situ substrate while the electrical probe circuitry causes one or more process steps due to applied levels of voltage or current signals. The electrical probe circuitry may measure changes in electrical properties of the substrate due to the light illumination, the applied voltages and/or currents or other processes. The in situ process may be controlled on the basis of the optical and electrical measurements.

摘要翻译： 用于半导体和相关材料基板上的器件和部件的原位过程控制，监测，优化和制造的方法和系统包括光照系统和电探针电路。 光照射系统可以包括光源和用于测量原位衬底的光学性质的检测器，而电探针电路由于施加的电压或电流信号的电平而导致一个或多个处理步骤。 电探针电路可以测量由于光照射，施加的电压和/或电流或其它过程而导致的衬底的电性能的变化。 可以基于光学和电学测量来控制原位过程。

公开(公告)号：US20080192250A1

公开(公告)日：2008-08-14

申请号：US11689419

申请日：2007-03-21

申请人： Woo Sik Yoo ,  Kitaek Kang

发明人： Woo Sik Yoo ,  Kitaek Kang

IPC分类号： G01J3/28 ,  H01S3/10

CPC分类号： G01N21/718 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/40 ,  B23K2103/50 ,  G01N2021/1782 ,  G01N2021/8416 ,  H01L21/268

摘要： Methods and systems for control and monitoring processing of semiconductor materials with a focused laser beam. Laser light may be focused on a sample to excite optical emission at the sample surface during processing, which may include laser processing. Optical emission spectra produced may be analyzed for various properties effectively during the process. For example, process effects such as chemical composition analysis, species concentration, depth profiling, homogeneity characterization and mapping, purity, and reactivity may be monitored by optical spectral analysis. The wavelength may be selected to be appropriate for the process effect chosen.

摘要翻译： 用聚焦激光束控制和监测半导体材料的方法和系统。 激光可以聚焦在样品上以在处理期间激发样品表面的光发射，其可以包括激光加工。 可以在该过程中有效地分析所产生的光发射光谱的各种性质。 例如，可以通过光谱分析来监测诸如化学成分分析，物质浓度，深度分布，均匀性表征和测绘，纯度和反应性的过程效应。 可以选择波长适合于所选择的处理效果。