公开(公告)号：US10199586B2

公开(公告)日：2019-02-05

申请号：US15221885

申请日：2016-07-28

Applicant: Xerox Corporation

Inventor： Guiqin Song ,  Ping Mei ,  Nan-Xing Hu ,  Gregory Whiting ,  Biby Esther Abraham

IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05

Abstract: A process for preparing a device and a device including a substrate; an interlayer disposed on the substrate, wherein the interlayer comprises a cured film formed from an interlayer composition, wherein the interlayer composition comprises: an epoxy compound; a polyvinyl phenol; a melamine resin; a solvent; an optional surfactant; and an optional catalyst; a source electrode and a drain electrode disposed on a surface of the interlayer; a semiconductor layer disposed on the interlayer, wherein the semiconductor layer is disposed into a gap between the source and drain electrode; a back channel interface comprising an interface between the semiconductor layer and the interlayer, wherein the interlayer serves as a back channel dielectric layer for the device; a dielectric layer disposed on the semiconductor layer; a gate electrode disposed on the dielectric layer. Also an interlayer composition and an organic thin film transistor comprising the interlayer composition.

公开(公告)号：US20180033982A1

公开(公告)日：2018-02-01

申请号：US15221885

申请日：2016-07-28

Applicant: Xerox Corporation

Inventor： Guiqin Song ,  Ping Mei ,  Nan-Xing Hu ,  Gregory Whiting ,  Biby Esther Abraham

IPC: H01L51/10 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L51/107 ,  H01L51/0096 ,  H01L51/0541 ,  H01L2251/30 ,  Y02E10/549

Abstract: A process for preparing a device and a device including a substrate; an interlayer disposed on the substrate, wherein the interlayer comprises a cured film formed from an interlayer composition, wherein the interlayer composition comprises: an epoxy compound; a polyvinyl phenol; a melamine resin; a solvent; an optional surfactant; and an optional catalyst; a source electrode and a drain electrode disposed on a surface of the interlayer; a semiconductor layer disposed on the interlayer, wherein the semiconductor layer is disposed into a gap between the source and drain electrode; a back channel interface comprising an interface between the semiconductor layer and the interlayer, wherein the interlayer serves as a back channel dielectric layer for the device; a dielectric layer disposed on the semiconductor layer; a gate electrode disposed on the dielectric layer. Also an interlayer composition and an organic thin film transistor comprising the interlayer composition.