公开(公告)号：US11772406B2

公开(公告)日：2023-10-03

申请号：US17157652

申请日：2021-01-25

申请人： PALO ALTO RESEARCH CENTER INCORPORATED ,  XEROX CORPORATION

发明人： Warren Jackson ,  Janos Veres ,  Yujie Zhu ,  Jennifer L. Belelie ,  Robert A. Street ,  Ping Mei ,  Kent Evans

IPC分类号： G06K19/06 ,  B42D25/29 ,  B29C64/118 ,  B29C64/153 ,  B42D25/405 ,  B42D25/378 ,  B33Y80/00 ,  B33Y30/00 ,  B33Y70/10

CPC分类号： B42D25/29 ,  B29C64/118 ,  B29C64/153 ,  B42D25/378 ,  B42D25/405 ,  B33Y30/00 ,  B33Y70/10 ,  B33Y80/00

摘要： A print feedstock has a base material and a marker material, the base material and the marker material having different physical properties. A system to validate objects includes at least one printer to print feedstock onto an object, the feedstock comprising a base material and a marker material, the base material and a marker material having different properties, a device to create a unique identifier for the object based upon a pattern of the feedstock, and a store in which the unique identifier can be stored.

公开(公告)号：US10199586B2

公开(公告)日：2019-02-05

申请号：US15221885

申请日：2016-07-28

申请人： Xerox Corporation

发明人： Guiqin Song ,  Ping Mei ,  Nan-Xing Hu ,  Gregory Whiting ,  Biby Esther Abraham

IPC分类号： H01L51/10 ,  H01L51/00 ,  H01L51/05

摘要： A process for preparing a device and a device including a substrate; an interlayer disposed on the substrate, wherein the interlayer comprises a cured film formed from an interlayer composition, wherein the interlayer composition comprises: an epoxy compound; a polyvinyl phenol; a melamine resin; a solvent; an optional surfactant; and an optional catalyst; a source electrode and a drain electrode disposed on a surface of the interlayer; a semiconductor layer disposed on the interlayer, wherein the semiconductor layer is disposed into a gap between the source and drain electrode; a back channel interface comprising an interface between the semiconductor layer and the interlayer, wherein the interlayer serves as a back channel dielectric layer for the device; a dielectric layer disposed on the semiconductor layer; a gate electrode disposed on the dielectric layer. Also an interlayer composition and an organic thin film transistor comprising the interlayer composition.

公开(公告)号：US09853230B2

公开(公告)日：2017-12-26

申请号：US14623826

申请日：2015-02-17

申请人： XEROX CORPORATION ,  PALO ALTO RESEARCH CENTER INCORPORATED

发明人： Tse Nga Ng ,  Ping Mei ,  Yiliang Wu ,  Biby Esther Abraham

IPC分类号： H01L51/10 ,  H01L51/05 ,  H01L51/00 ,  H01B1/22

CPC分类号： H01L51/105 ,  H01B1/22 ,  H01L51/0022 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/055

摘要： A transistor has a substrate, source and drain electrodes on the substrate, the source and drain electrodes formed of a conductor ink having silver nanoparticles with integrated dipolar surfactants, an organic semiconductor forming a channel between the source and drain electrodes, the organic semiconductor in contact with the source and drain electrodes, a gate dielectric layer having a first surface in contact with the organic semiconductor, and a gate electrode in contact with a second surface of the gate dielectric layer, the gate electrode formed of silver nanoparticles with integrated dipolar surfactants.

公开(公告)号：US20180033982A1

公开(公告)日：2018-02-01

申请号：US15221885

申请日：2016-07-28

申请人： Xerox Corporation

发明人： Guiqin Song ,  Ping Mei ,  Nan-Xing Hu ,  Gregory Whiting ,  Biby Esther Abraham

IPC分类号： H01L51/10 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L51/107 ,  H01L51/0096 ,  H01L51/0541 ,  H01L2251/30 ,  Y02E10/549

摘要： A process for preparing a device and a device including a substrate; an interlayer disposed on the substrate, wherein the interlayer comprises a cured film formed from an interlayer composition, wherein the interlayer composition comprises: an epoxy compound; a polyvinyl phenol; a melamine resin; a solvent; an optional surfactant; and an optional catalyst; a source electrode and a drain electrode disposed on a surface of the interlayer; a semiconductor layer disposed on the interlayer, wherein the semiconductor layer is disposed into a gap between the source and drain electrode; a back channel interface comprising an interface between the semiconductor layer and the interlayer, wherein the interlayer serves as a back channel dielectric layer for the device; a dielectric layer disposed on the semiconductor layer; a gate electrode disposed on the dielectric layer. Also an interlayer composition and an organic thin film transistor comprising the interlayer composition.

公开(公告)号：US12056994B2

公开(公告)日：2024-08-06

申请号：US16929531

申请日：2020-07-15

申请人： Xerox Corporation

发明人： Ping Mei ,  Robert Anthony Street ,  Kent Evans

IPC分类号： G08B13/14 ,  A41D31/04 ,  B32B5/02 ,  B32B25/10 ,  H01B1/22 ,  H01B5/14 ,  H05K1/18 ,  H05K3/10

CPC分类号： G08B13/1472 ,  A41D31/04 ,  B32B5/024 ,  B32B5/028 ,  B32B25/10 ,  H01B1/22 ,  H01B5/14 ,  H05K1/18 ,  H05K3/10 ,  B32B2307/202 ,  C09J2203/358

摘要： Systems and methods are provided for monitoring object placement on a surface. The system includes a pressure-sensitive conductive sheet. The pressure-sensitive conductive sheet includes a stretchable fabric, having a plurality of fibers, and a conductive material positioned on a plurality of adjoining fibers of the stretchable fabric. The system further includes a 3-dimensional structure positioned under the pressure-sensitive conductive sheet. The 3-dimensional structure includes one or more depressions onto which the stretchable fabric can be stretched and the conductive material is positioned over the one or more depressions.