THERAPEUTIC LIGHT CONTROL SYSTEM
    1.
    发明申请
    THERAPEUTIC LIGHT CONTROL SYSTEM 有权
    治疗灯控制系统

    公开(公告)号:US20120259392A1

    公开(公告)日:2012-10-11

    申请号:US13080853

    申请日:2011-04-06

    IPC分类号: A61N5/06

    摘要: A system for influencing a state of a user includes a display with a light source for emitting light influencing the state of the user. A light controller selectively controls the emission of the light including at least one of; (1) the spectrum of the light; (2) the duration of the light; 3) the distribution of the light; (4) the intensity of the light; and (5) the timing of the light. An analysis engine capable of providing a signal to the light controller indicating a desired emission of the light based upon selectively illuminating one or more of a plurality of different blue light sources, each of which having a different peak spectrum.

    摘要翻译: 用于影响用户状态的系统包括具有用于发射影响用户状态的光的光源的显示器。 光控制器选择性地控制包括以下中的至少一个的光的发射: (1)光谱; (2)光的持续时间; 3)光的分布; (4)光强度; 和(5)光的时间。 一种分析引擎,其能够基于选择性地照射多个不同的蓝色光源中的一个或多个,其中每个具有不同的峰值光谱,从而向光控制器提供指示所需光的发射的信号。

    Therapeutic light control system
    2.
    发明授权
    Therapeutic light control system 有权
    治疗灯光控制系统

    公开(公告)号:US09289622B2

    公开(公告)日:2016-03-22

    申请号:US13080853

    申请日:2011-04-06

    IPC分类号: A61N5/06

    摘要: A system for influencing a state of a user includes a display with a light source for emitting light influencing the state of the user. A light controller selectively controls the emission of the light including at least one of; (1) the spectrum of the light; (2) the duration of the light; 3) the distribution of the light; (4) the intensity of the light; and (5) the timing of the light. An analysis engine capable of providing a signal to the light controller indicating a desired emission of the light based upon selectively illuminating one or more of a plurality of different blue light sources, each of which having a different peak spectrum.

    摘要翻译: 用于影响用户状态的系统包括具有用于发射影响用户状态的光的光源的显示器。 光控制器选择性地控制包括以下中的至少一个的光的发射: (1)光谱; (2)光的持续时间; 3)光的分布; (4)光强度; 和(5)光的时间。 一种分析引擎,其能够基于选择性地照射多个不同的蓝色光源中的一个或多个,其中每个具有不同的峰值光谱,从而向光控制器提供指示所需光的发射的信号。

    Dual-pixel full color CMOS imager with large capacity well
    4.
    发明授权
    Dual-pixel full color CMOS imager with large capacity well 有权
    双像素全彩CMOS成像器,容量大

    公开(公告)号:US07816170B2

    公开(公告)日:2010-10-19

    申请号:US12251067

    申请日:2008-10-14

    IPC分类号: H01L21/00

    摘要: A dual-pixel full color CMOS imager comprises a two-photodiode stack including an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer at a first depth overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. A single photodiode including a bottom p doped layer overlies the substrate at a third depth. The third depth is less than, or equal to the first depth. A bottom n doped layer overlies the bottom p doped layer, a top p doped layer directly overlies the bottom n doped layer without an intervening layer, and a top n doped layer overlies the top p doped layer.

    摘要翻译: 双像素全色CMOS成像器包括包括n掺杂衬底,底部光电二极管和顶部光电二极管的双光电二极管堆叠。 底部光电二极管具有覆盖衬底的第一深度的底部p掺杂层和覆盖底部p掺杂层的底部n掺杂层阴极。 顶部光电二极管具有覆盖底部n掺杂层的顶部p掺杂层和覆盖顶部p掺杂层的顶部n掺杂层阴极。 包括底部p掺杂层的单个光电二极管在第三深度覆盖衬底。 第三深度小于或等于第一深度。 底部n掺杂层覆盖在底部p掺杂层上,顶部p掺杂层直接覆盖在底部n掺杂层上,而没有中间层,并且顶部n掺杂层覆盖在顶部p掺杂层上。

    Dual-Pixel Full Color CMOS Imager with Large Capacity Well
    6.
    发明申请
    Dual-Pixel Full Color CMOS Imager with Large Capacity Well 有权
    具有大容量阱的双像素全彩色CMOS成像仪

    公开(公告)号:US20090194800A1

    公开(公告)日:2009-08-06

    申请号:US12251067

    申请日:2008-10-14

    摘要: A dual-pixel full color CMOS imager is provided. The imager comprises a two-photodiode stack including an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer at a first depth overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. The imager further includes a single photodiode including a bottom p doped layer overlying the substrate at a third depth, where the third depth is less than, or equal to the first depth. A bottom n doped layer overlies the bottom p doped layer, a top p doped layer directly overlies the bottom n doped layer without an intervening layer, and a top n doped layer overlies the top p doped layer.

    摘要翻译: 提供了一个双像素全彩色CMOS成像器。 该成像器包括包括n掺杂衬底,底部光电二极管和顶部光电二极管的双光电二极管堆叠。 底部光电二极管具有覆盖衬底的第一深度的底部p掺杂层和覆盖底部p掺杂层的底部n掺杂层阴极。 顶部光电二极管具有覆盖底部n掺杂层的顶部p掺杂层和覆盖顶部p掺杂层的顶部n掺杂层阴极。 成像器还包括单个光电二极管,其包括在第三深度处覆盖衬底的底部p掺杂层,其中第三深度小于或等于第一深度。 底部n掺杂层覆盖在底部p掺杂层上,顶部p掺杂层直接覆盖在底部n掺杂层上,而没有中间层,并且顶部n掺杂层覆盖在顶部p掺杂层上。