公开(公告)号：US20130313575A1

公开(公告)日：2013-11-28

申请号：US13976351

申请日：2011-12-06

申请人： Xiaolong Chen ,  Chunjun Liu ,  Tonghua Peng ,  Longyuan Li ,  Bo Wang ,  Gang Wang ,  Wenjun Wang ,  Yu Liu

发明人： Xiaolong Chen ,  Chunjun Liu ,  Tonghua Peng ,  Longyuan Li ,  Bo Wang ,  Gang Wang ,  Wenjun Wang ,  Yu Liu

IPC分类号： H01L29/16 ,  H01L21/02

CPC分类号： H01L29/1608 ,  C30B23/00 ,  C30B23/002 ,  C30B23/005 ,  C30B23/06 ,  C30B29/36 ,  H01L21/02529 ,  H01L29/435

摘要： A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants. The semi-insulating SiC monocrystal has resistivity greater than 1×105 Ω·cm at room temperature, and its electrical performances and crystal quality satisfy requirements for manufacture of microwave devices. The deep energy level dopants and the intrinsic point defects jointly serve to compensate the intrinsic impurities, so as to obtain a high quality semi-insulating single crystal.

摘要翻译： 公开了一种半绝缘碳化硅单晶及其生长方法。 半绝缘碳化硅单晶包括固有杂质，深能级掺杂剂和固有点缺陷。 在碳化硅单晶的制造期间无意中引入固有杂质，并且有意地掺杂或引入深能级掺杂剂和固有点缺陷以补偿固有杂质。 本征杂质包括浅能级供体杂质和浅能级受体杂质。 深能级掺杂剂的浓度和本征点缺陷的浓度的总和大于浅能级供体杂质的浓度与浅能级受体杂质的浓度之间的差异， 内在点缺陷小于深能级掺杂剂的浓度。 半绝缘SiC单晶在室温下的电阻率大于1×105Ω·cm，其电性能和晶体质量满足微波器件制造要求。 深能级掺杂剂和固有点缺陷共同用于补偿固有杂质，从而获得高质量的半绝缘单晶。

公开(公告)号：US09893152B2

公开(公告)日：2018-02-13

申请号：US13976351

申请日：2011-12-06

申请人： Xiaolong Chen ,  Chunjun Liu ,  Tonghua Peng ,  Longyuan Li ,  Bo Wang ,  Gang Wang ,  Wenjun Wang ,  Yu Liu

发明人： Xiaolong Chen ,  Chunjun Liu ,  Tonghua Peng ,  Longyuan Li ,  Bo Wang ,  Gang Wang ,  Wenjun Wang ,  Yu Liu

IPC分类号： H01L29/16 ,  C30B23/00 ,  H01L29/43 ,  C30B23/06 ,  C30B29/36 ,  H01L21/02

CPC分类号： H01L29/1608 ,  C30B23/00 ,  C30B23/002 ,  C30B23/005 ,  C30B23/06 ,  C30B29/36 ,  H01L21/02529 ,  H01L29/435

摘要： A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants. The semi-insulating SiC monocrystal has resistivity greater than 1×105 Ω·cm at room temperature, and its electrical performances and crystal quality satisfy requirements for manufacture of microwave devices. The deep energy level dopants and the intrinsic point defects jointly serve to compensate the intrinsic impurities, so as to obtain a high quality semi-insulating single crystal.

公开(公告)号：US20130269598A1

公开(公告)日：2013-10-17

申请号：US13994306

申请日：2011-11-11

申请人： Xiaolong Chen ,  Bo Wang ,  Longyuan Li ,  Tonghua Peng ,  Chunjun Liu ,  Wenjun Wang ,  Gang Wang

发明人： Xiaolong Chen ,  Bo Wang ,  Longyuan Li ,  Tonghua Peng ,  Chunjun Liu ,  Wenjun Wang ,  Gang Wang

IPC分类号： C30B23/00 ,  C30B23/06

CPC分类号： C30B23/002 ,  C30B23/06 ,  C30B29/36 ,  C30B33/02

摘要： A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process.

摘要翻译： 提供了通过PVT（物理蒸气传输）生长碳化硅单晶的技术和用于在生长后原位退火晶体的技术。 该技术可以通过调节石墨坩埚上部绝缘层的位置来实现对生长室温度分布的实时动态控制，从而在生长过程中实时控制生长室的温度分布 满足技术需求，有利于显着提高晶体质量和产量。 生长完成后，生长室中的惰性气体压力升高，生长室的温度梯度降低，可以在较小的温度下进行碳化硅晶体的原位退火，有助于降低碳化硅晶体之间的应力 晶体和坩埚盖以及在升华中生长晶体以降低断裂比并在随后的制造过程中提高屈服比。

公开(公告)号：US09340898B2

公开(公告)日：2016-05-17

申请号：US13994306

申请日：2011-11-11

申请人： Xiaolong Chen ,  Bo Wang ,  Longyuan Li ,  Tonghua Peng ,  Chunjun Liu ,  Wenjun Wang ,  Gang Wang

发明人： Xiaolong Chen ,  Bo Wang ,  Longyuan Li ,  Tonghua Peng ,  Chunjun Liu ,  Wenjun Wang ,  Gang Wang

IPC分类号： C30B23/06 ,  C30B23/00 ,  C30B29/36 ,  C30B33/02

CPC分类号： C30B23/002 ,  C30B23/06 ,  C30B29/36 ,  C30B33/02

摘要： A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process.

摘要翻译： 提供了通过PVT（物理蒸气传输）生长碳化硅单晶的技术和用于在生长后原位退火晶体的技术。 该技术可以通过调节石墨坩埚上部绝缘层的位置来实现生长室温度分布的实时动态控制，从而在生长过程中实时控制生长室的温度分布 满足技术需求，有利于显着提高晶体质量和产量。 生长完成后，生长室中的惰性气体压力升高，生长室的温度梯度降低，可以在较小的温度下进行碳化硅晶体的原位退火，有助于降低碳化硅晶体之间的应力 晶体和坩埚盖以及在升华中生长晶体以降低断裂比并在随后的制造过程中提高屈服比。