公开(公告)号：US20090049431A1

公开(公告)日：2009-02-19

申请号：US12184557

申请日：2008-08-01

Applicant: Wenjun Wang ,  Zheng Wang ,  Xin Zhong ,  Zhou Wu

Inventor： Wenjun Wang ,  Zheng Wang ,  Xin Zhong ,  Zhou Wu

IPC: G06F9/45

CPC classification number: G06F8/456

Abstract: The present invention provides a method and a compiler of compiling a source program. According to an aspect of the present invention, there is provided a method of compiling a source program comprising: identifying a hint related to vector aligning when syntax analyzing said source program; and generating a simplified code based on said identified hint related to vector aligning when generating a code.

Abstract translation: 本发明提供了一种编译源程序的方法和编译器。 根据本发明的一个方面，提供了一种编译源程序的方法，包括：在语法分析所述源程序时，识别与向量对齐相关的提示; 以及当生成代码时，基于与向量对齐相关的所述所提示的提示来生成简化代码。

公开(公告)号：US20080153070A1

公开(公告)日：2008-06-26

申请号：US11613381

申请日：2006-12-20

Applicant: Richard S. Tyler ,  Camille Dunn ,  Shelley Witt ,  Wenjun Wang

Inventor： Richard S. Tyler ,  Camille Dunn ,  Shelley Witt ,  Wenjun Wang

IPC: G09B9/00

CPC classification number: G09B21/009

Abstract: Provided are training methods and training systems that allow for spatially separated speech-in-noise and localization training. The methods and systems can provide spatial distinctness through the use of stimuli from multiple spatial locations. The methods and systems allow for training a student to segregate sound, localize, track sound, suppress information from one source to focus on another, and judge both movement and distance.

Abstract translation: 提供了允许空间分离的噪声和定位训练的训练方法和训练系统。 这些方法和系统可以通过使用来自多个空间位置的刺激来提供空间分明。 方法和系统允许训练学生分离声音，本地化，跟踪声音，抑制来自一个来源的信息以专注于另一个来源，并且判断运动和距离。

公开(公告)号：US20130313575A1

公开(公告)日：2013-11-28

申请号：US13976351

申请日：2011-12-06

Applicant: Xiaolong Chen ,  Chunjun Liu ,  Tonghua Peng ,  Longyuan Li ,  Bo Wang ,  Gang Wang ,  Wenjun Wang ,  Yu Liu

Inventor： Xiaolong Chen ,  Chunjun Liu ,  Tonghua Peng ,  Longyuan Li ,  Bo Wang ,  Gang Wang ,  Wenjun Wang ,  Yu Liu

IPC: H01L29/16 ,  H01L21/02

CPC classification number: H01L29/1608 ,  C30B23/00 ,  C30B23/002 ,  C30B23/005 ,  C30B23/06 ,  C30B29/36 ,  H01L21/02529 ,  H01L29/435

Abstract: A semi-insulating silicon carbide monocrystal and a method of growing the same are disclosed. The semi-insulating silicon carbide monocrystal comprises intrinsic impurities, deep energy level dopants and intrinsic point defects. The intrinsic impurities are introduced unintentionally during manufacture of the silicon carbide monocrystal, and the deep energy level dopants and the intrinsic point defects are doped or introduced intentionally to compensate for the intrinsic impurities. The intrinsic impurities include shallow energy level donor impurities and shallow energy level acceptor impurities. A sum of a concentration of the deep energy level dopants and a concentration of the intrinsic point defects is greater than a difference between a concentration of the shallow energy level donor impurities and a concentration of the shallow energy level acceptor impurities, and the concentration of the intrinsic point defects is less than the concentration of the deep energy level dopants. The semi-insulating SiC monocrystal has resistivity greater than 1×105 Ω·cm at room temperature, and its electrical performances and crystal quality satisfy requirements for manufacture of microwave devices. The deep energy level dopants and the intrinsic point defects jointly serve to compensate the intrinsic impurities, so as to obtain a high quality semi-insulating single crystal.

Abstract translation: 公开了一种半绝缘碳化硅单晶及其生长方法。 半绝缘碳化硅单晶包括固有杂质，深能级掺杂剂和固有点缺陷。 在碳化硅单晶的制造期间无意中引入固有杂质，并且有意地掺杂或引入深能级掺杂剂和固有点缺陷以补偿固有杂质。 本征杂质包括浅能级供体杂质和浅能级受体杂质。 深能级掺杂剂的浓度和本征点缺陷的浓度的总和大于浅能级供体杂质的浓度与浅能级受体杂质的浓度之间的差异， 内在点缺陷小于深能级掺杂剂的浓度。 半绝缘SiC单晶在室温下的电阻率大于1×105Ω·cm，其电性能和晶体质量满足微波器件制造要求。 深能级掺杂剂和固有点缺陷共同用于补偿固有杂质，从而获得高质量的半绝缘单晶。

公开(公告)号：US08278445B2

公开(公告)日：2012-10-02

申请号：US12668219

申请日：2008-09-19

Applicant: Shangzhong Liu ,  Canxian Mu ,  Wenjun Wang ,  Jianwei Chen ,  Shuguang Wang

Inventor： Shangzhong Liu ,  Canxian Mu ,  Wenjun Wang ,  Jianwei Chen ,  Shuguang Wang

IPC: C07D239/22 ,  C07C69/76

CPC classification number: C07C67/31 ,  C07C67/343 ,  C07D239/34 ,  C07D239/52 ,  C07C69/734 ,  C07C69/738

Abstract: Preparation method of a compound of general formula (I) comprises the following steps: (1) a compound of general formula (II) reacts with a formylating agent in an aprotic solvent at a temperature between −20° C. and 200° C. in the presence of a Lewis acid, then an organic base is added to promote the reaction to obtain an intermediate product; (2) the above intermediate product reacts with a methylating agent in the presence of an alkali at a temperature between −20° C. and 100° C. to obtain the compound of formula (I).

Abstract translation: 通式（I）化合物的制备方法包括以下步骤：（1）通式（II）的化合物在-20℃至200℃的温度下，在非质子传递溶剂中与甲酰化剂反应。 在路易斯酸存在下，加入有机碱促进反应得到中间产物; （2）上述中间产物在碱存在下，在-20℃至100℃的温度下与甲基化剂反应，得到式（I）化合物。

公开(公告)号：US08255592B2

公开(公告)日：2012-08-28

申请号：US12238073

申请日：2008-09-25

Applicant: Zheng Wang ,  Liang Chen ,  Wenjun Wang ,  Kuan Feng

Inventor： Zheng Wang ,  Liang Chen ,  Wenjun Wang ,  Kuan Feng

IPC: G06F13/28 ,  G06F9/46

CPC classification number: G06F15/16

Abstract: A cell broadband engine processor includes a memory a power processing element (PPE) coupled with the memory, and a plurality of synergistic processing elements. The PPE creates a SPE as a computing SPE for an application. The PPE determines idles ones of the plurality of SPEs, and creates an idle one of the plurality SPEs as a managing SPE. Each of the plurality of SPEs is associated with a local storage. The managing SPE informs the computing SPE of a starting effective address of the local storage of the managing SPE and an effective address for a command queue. The managing SPE manages movement of data associated with computing of the computing SPE based on one or more commands associated with the application. A computing SPE sends the one or more commands to the managing SPE for insertion into the command queue.

Abstract translation: 小区宽带引擎处理器包括与存储器耦合的功率处理元件（PPE）和多个协同处理元件的存储器。 PPE创建一个SPE作为应用程序的计算SPE。 PPE确定多个SPE中的空闲数据，并且创建多个SPE中的空闲的一个作为管理SPE。 多个SPE中的每一个与本地存储器相关联。 管理SPE将计算SPE通知管理SPE的本地存储的起始有效地址和命令队列的有效地址。 管理SPE基于与应用相关联的一个或多个命令来管理与计算SPE的计算相关联的数据的移动。 计算SPE将一个或多个命令发送到管理SPE以插入到命令队列中。

公开(公告)号：US20090089559A1

公开(公告)日：2009-04-02

申请号：US12238073

申请日：2008-09-25

Applicant: Zheng Wang ,  Liang Chen ,  Wenjun Wang ,  Kuan Feng

Inventor： Zheng Wang ,  Liang Chen ,  Wenjun Wang ,  Kuan Feng

IPC: G06F9/06

CPC classification number: G06F15/16

Abstract: A method of managing data movement in a cell broadband engine processor, comprising: determining one or more idle synergistic processing elements among multiple SPEs in the cell broadband engine processor as a managing SPE, and informing a computing SPE among said multiple SPEs of a starting effective address of a LS of said managing SPE and an effective address for a command queue; and said managing SPE managing movement of data associated with computing of said computing SPE based on the command queue from the computing SPE.

Abstract translation: 一种管理小区宽带引擎处理器中的数据移动的方法，包括：将所述小区宽带引擎处理器中的多个SPE中的一个或多个空闲协同处理元件确定为管理SPE，以及将所述多个SPE中的计算SPE通知起始有效 所述管理SPE的LS的地址和命令队列的有效地址; 并且管理SPE基于来自计算SPE的命令队列来管理与所述计算SPE的计算相关联的数据的移动。

公开(公告)号：US20130269598A1

公开(公告)日：2013-10-17

申请号：US13994306

申请日：2011-11-11

Applicant: Xiaolong Chen ,  Bo Wang ,  Longyuan Li ,  Tonghua Peng ,  Chunjun Liu ,  Wenjun Wang ,  Gang Wang

Inventor： Xiaolong Chen ,  Bo Wang ,  Longyuan Li ,  Tonghua Peng ,  Chunjun Liu ,  Wenjun Wang ,  Gang Wang

IPC: C30B23/00 ,  C30B23/06

CPC classification number: C30B23/002 ,  C30B23/06 ,  C30B29/36 ,  C30B33/02

Abstract: A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process.

Abstract translation: 提供了通过PVT（物理蒸气传输）生长碳化硅单晶的技术和用于在生长后原位退火晶体的技术。 该技术可以通过调节石墨坩埚上部绝缘层的位置来实现对生长室温度分布的实时动态控制，从而在生长过程中实时控制生长室的温度分布 满足技术需求，有利于显着提高晶体质量和产量。 生长完成后，生长室中的惰性气体压力升高，生长室的温度梯度降低，可以在较小的温度下进行碳化硅晶体的原位退火，有助于降低碳化硅晶体之间的应力 晶体和坩埚盖以及在升华中生长晶体以降低断裂比并在随后的制造过程中提高屈服比。

公开(公告)号：US20130203611A1

公开(公告)日：2013-08-08

申请号：US13814196

申请日：2011-08-05

Applicant: Hang Li ,  Huihui Teng ,  Danyang Mei ,  Wenjun Wang ,  Gang Li ,  Xiaokun Qin ,  Zhengde Feng ,  Dong Wang ,  Jing Cheng

Inventor： Hang Li ,  Huihui Teng ,  Danyang Mei ,  Wenjun Wang ,  Gang Li ,  Xiaokun Qin ,  Zhengde Feng ,  Dong Wang ,  Jing Cheng

IPC: G01N21/64 ,  B25J11/00

CPC classification number: G01N21/6486 ,  B25J11/00 ,  G01N21/6452 ,  G01N35/04 ,  G01N2035/00039 ,  G01N2035/00138 ,  G02B21/34

Abstract: An automatic slide loading device for microarray scanner comprises slide holders (1), a carrier device (2) and a positioning chamber (3), wherein the slide holder (1) can hold microarray slides (6) and the slide holder (1) is placed out of the scanning platform of the microarray scanner when the microarray scanner is in off work state, wherein the carrier device (2) is connected to the positioning chamber (3) and the carrier device (2) can load the slide holder (1) into the positioning chamber (3), wherein the positioning chamber (3) is placed above the scanning platform of the microarray scanner and is used to precisely locate the working surface of the microarray slides (6) in the slide holder (1).

Abstract translation: 一种用于微阵列扫描器的自动滑块装载装置，包括滑动架（1），载体装置（2）和定位室（3），其中滑动架（1）可以容纳微阵列滑块（6）和滑动架（1） 当微阵列扫描仪处于关闭状态时，放置在微阵列扫描仪的扫描平台之外，其中载体装置（2）连接到定位室（3），并且载体装置（2）可以装载滑动架（ 1）进入定位室（3），其中定位室（3）放置在微阵列扫描仪的扫描平台上方，并用于精确地定位载玻片保持器（1）中的微阵列滑块（6）的工作表面， 。

公开(公告)号：US09500931B2

公开(公告)日：2016-11-22

申请号：US14370510

申请日：2012-01-06

Applicant: Xiaolong Chen ,  Shunchong Wang ,  Tonghua Peng ,  Gang Wang ,  Chunjun Liu ,  Wenjun Wang ,  Shifeng Jin

Inventor： Xiaolong Chen ,  Shunchong Wang ,  Tonghua Peng ,  Gang Wang ,  Chunjun Liu ,  Wenjun Wang ,  Shifeng Jin

IPC: G02F1/355 ,  G02F1/35 ,  G02F1/361 ,  G02F1/39 ,  H01S3/23 ,  H01S3/00

CPC classification number: G02F1/3551 ,  G02F1/353 ,  G02F1/355 ,  G02F1/361 ,  G02F1/39 ,  G02F2001/392 ,  H01S3/0064 ,  H01S3/0092 ,  H01S3/2391

Abstract: Provided is a nonlinear optical device manufactured with 4H silicon carbide crystal. The nonlinear optical crystal may be configured to alter at least a light beam (12) at a frequency to generate at least a light beam (16) at a further frequency different from the frequency. The nonlinear optical crystal comprises a 4H silicon carbide crystal (13). The nonlinear optical device is more compatible with practical applications in terms of outputting mid-infrared laser at high power and high quality and thus are more applicable in practice, because the 4H silicon carbide crystal has a relatively high laser induced damage threshold, a relatively broad transmissive band (0.38-5.9 μm and 6.6-7.08 μm), a relatively great 2nd-order nonlinear optical coefficient (d15=6.7 pm/V), a relatively great birefringence, a high thermal conductivity (490 Wm−1K−1), and a high chemical stability.

Abstract translation: 提供了一种用4H碳化硅晶体制造的非线性光学器件。 非线性光学晶体可以被配置为以频率改变至少一个光束（12），以产生不同于频率的另外的频率的至少一个光束（16）。 非线性光学晶体包括4H碳化硅晶体（13）。 非线性光学器件与实际应用相比，在高功率和高质量输出中红外激光器方面更加兼容，因此在实际中更为适用，因为4H碳化硅晶体具有较高的激光诱导损伤阈值，相对较宽 （0.38-5.9μm和6.6-7.08μm），相对较大的二阶非线性光学系数（d15 = 6.7pm / V），相对较大的双折射率，高导热率（490Wm-1K-1）， 化学稳定性高。

公开(公告)号：US09340898B2

公开(公告)日：2016-05-17

申请号：US13994306

申请日：2011-11-11

Applicant: Xiaolong Chen ,  Bo Wang ,  Longyuan Li ,  Tonghua Peng ,  Chunjun Liu ,  Wenjun Wang ,  Gang Wang

Inventor： Xiaolong Chen ,  Bo Wang ,  Longyuan Li ,  Tonghua Peng ,  Chunjun Liu ,  Wenjun Wang ,  Gang Wang

IPC: C30B23/06 ,  C30B23/00 ,  C30B29/36 ,  C30B33/02

CPC classification number: C30B23/002 ,  C30B23/06 ,  C30B29/36 ,  C30B33/02

Abstract: A technology for growing silicon carbide single crystals by PVT (Physical Vapor Transport) and a technology for in-situ annealing the crystals after growth is finished is provided. The technology can achieve real-time dynamic control of the temperature distribution of growth chamber by regulating the position of the insulation layer on the upper part of the graphite crucible, thus controlling the temperature distribution of growth chamber in real-time during the growth process according to the needs of the technology, which helps to significantly improve the crystal quality and production yield. After growth is finished, the inert gas pressure in growth chamber is raised and the temperature gradient of the growth chamber is reduced so that in-situ annealing the silicon carbide crystals can be carried out under a small one, which helps to reduce the stress between the crystal and the crucible lid as well as that in sublimation grown crystals to reduce the breakage ratio and improve the yield ratio during the subsequent fabrication process.

Abstract translation: 提供了通过PVT（物理蒸气传输）生长碳化硅单晶的技术和用于在生长后原位退火晶体的技术。 该技术可以通过调节石墨坩埚上部绝缘层的位置来实现生长室温度分布的实时动态控制，从而在生长过程中实时控制生长室的温度分布 满足技术需求，有利于显着提高晶体质量和产量。 生长完成后，生长室中的惰性气体压力升高，生长室的温度梯度降低，可以在较小的温度下进行碳化硅晶体的原位退火，有助于降低碳化硅晶体之间的应力 晶体和坩埚盖以及在升华中生长晶体以降低断裂比并在随后的制造过程中提高屈服比。