公开(公告)号：US11557682B1

公开(公告)日：2023-01-17

申请号：US17579585

申请日：2022-01-19

申请人： XIDIAN UNIVERSITY

发明人： Jing Ning ,  Chi Zhang ,  Jincheng Zhang ,  Boyu Wang ,  Dong Wang ,  Peijun Ma ,  Yue Hao

IPC分类号： H01L29/872 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/3213 ,  H01L29/66

摘要： A low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation and a preparation method thereof. The low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation provided by the present disclosure includes a substrate layer, a GaN buffer layer, a GaN channel layer and an AlGaN barrier layer, which are arranged in sequence from bottom to top; a cathode arranged on the AlGaN barrier layer; a groove arranged in the GaN channel layer and the AlGaN barrier layer, and an anode provided on a bottom and a side wall of the groove and part of the AlGaN barrier layer; a dielectric layer provided on an uncovered portion of the AlGaN barrier layer; wherein, a contact portion of the anode with the groove and the AlGaN barrier layer is W or Mo metal with a crystal orientation of .

公开(公告)号：US20210359121A1

公开(公告)日：2021-11-18

申请号：US17355644

申请日：2021-06-23

申请人： Xidian University

发明人： Xuefeng Zheng ,  Xiaohua Ma ,  Zhenling Tang ,  Peijun Ma ,  Ming Du ,  Minhan Mi ,  Yunlong He ,  Yang Lu ,  Xiaohu Wang ,  Chong Wang ,  Yue Hao

IPC分类号： H01L29/778 ,  H01L29/20

摘要： A high electron mobility transistor (HEMT) device is provided. The HEMT device includes a substrate layer, a buffer layer, a barrier layer, and a metallic electrode layer sequentially arranged in that order from bottom to top. The metallic electrode layer includes a source electrode, a gate electrode and a drain electrode sequentially arranged in that order from left to right. The barrier layer may include m number of fluorine-doped regions arranged in sequence, where m is a positive integer and m≥2. The HEMT device can realize a relative stability of transconductance in a large range of a gate-source-bias through mutual compensation of transconductances in the fluorine-doped regions with different fluorine-ion concentrations of the barrier layer under the gate electrode, and the HEMT device has a good linearity without the need of excessive adjustments of material structure and device.

公开(公告)号：US11133185B2

公开(公告)日：2021-09-28

申请号：US16905147

申请日：2020-06-18

申请人： XIDIAN UNIVERSITY

发明人： Jing Ning ,  Jincheng Zhang ,  Dong Wang ,  Yanqing Jia ,  Chaochao Yan ,  Boyu Wang ,  Peijun Ma ,  Yue Hao

IPC分类号： H01L21/02

摘要： The present invention discloses an epitaxial lift-off process of graphene-based gallium nitride (GaN), and principally solves the existing problems about complex lift-off technique, high cost, and poor quality of lift-off GaN films. The invention is achieved by: first, growing graphene on a well-polished copper foil by CVD method; then, transferring a plurality of layers of graphene onto a sapphire substrate; next, growing GaN epitaxial layer on the sapphire substrate with a plurality of graphene layers transferred by the metal organic chemical vapor deposition (MOCVD) method; finally, lifting off and transferring the GaN epitaxial layer onto a target substrate with a thermal release tape. With graphene, the present invention relieves the stress generated by the lattice mismatch between substrate and epitaxial layer; moreover, the present invention readily lifts off and transfers the epitaxial layer to the target substrate by means of weak Van der Waals forces between epitaxial layer and graphene.