公开(公告)号：US10755990B2

公开(公告)日：2020-08-25

申请号：US16377188

申请日：2019-04-06

申请人： XIDIAN UNIVERSITY

发明人： Xuefeng Zheng ,  Xiaohua Ma ,  Yue Hao ,  Shuaishuai Dong ,  Peng Ji ,  Yingzhe Wang ,  Zhenling Tang ,  Chong Wang ,  Shihui Wang

IPC分类号： H01L21/28 ,  H01L21/66 ,  H01L21/283 ,  H01L21/265 ,  H01L21/324 ,  H01L29/40 ,  H01L29/66 ,  G01R27/20 ,  H01L29/417 ,  H01L29/778

摘要： The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.

公开(公告)号：US20210359121A1

公开(公告)日：2021-11-18

申请号：US17355644

申请日：2021-06-23

申请人： Xidian University

发明人： Xuefeng Zheng ,  Xiaohua Ma ,  Zhenling Tang ,  Peijun Ma ,  Ming Du ,  Minhan Mi ,  Yunlong He ,  Yang Lu ,  Xiaohu Wang ,  Chong Wang ,  Yue Hao

IPC分类号： H01L29/778 ,  H01L29/20

摘要： A high electron mobility transistor (HEMT) device is provided. The HEMT device includes a substrate layer, a buffer layer, a barrier layer, and a metallic electrode layer sequentially arranged in that order from bottom to top. The metallic electrode layer includes a source electrode, a gate electrode and a drain electrode sequentially arranged in that order from left to right. The barrier layer may include m number of fluorine-doped regions arranged in sequence, where m is a positive integer and m≥2. The HEMT device can realize a relative stability of transconductance in a large range of a gate-source-bias through mutual compensation of transconductances in the fluorine-doped regions with different fluorine-ion concentrations of the barrier layer under the gate electrode, and the HEMT device has a good linearity without the need of excessive adjustments of material structure and device.