公开(公告)号：US10755990B2

公开(公告)日：2020-08-25

申请号：US16377188

申请日：2019-04-06

申请人： XIDIAN UNIVERSITY

发明人： Xuefeng Zheng ,  Xiaohua Ma ,  Yue Hao ,  Shuaishuai Dong ,  Peng Ji ,  Yingzhe Wang ,  Zhenling Tang ,  Chong Wang ,  Shihui Wang

IPC分类号： H01L21/28 ,  H01L21/66 ,  H01L21/283 ,  H01L21/265 ,  H01L21/324 ,  H01L29/40 ,  H01L29/66 ,  G01R27/20 ,  H01L29/417 ,  H01L29/778

摘要： The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.

公开(公告)号：US11557682B1

公开(公告)日：2023-01-17

申请号：US17579585

申请日：2022-01-19

申请人： XIDIAN UNIVERSITY

发明人： Jing Ning ,  Chi Zhang ,  Jincheng Zhang ,  Boyu Wang ,  Dong Wang ,  Peijun Ma ,  Yue Hao

IPC分类号： H01L29/872 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L21/02 ,  H01L21/285 ,  H01L21/306 ,  H01L21/3213 ,  H01L29/66

摘要： A low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation and a preparation method thereof. The low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation provided by the present disclosure includes a substrate layer, a GaN buffer layer, a GaN channel layer and an AlGaN barrier layer, which are arranged in sequence from bottom to top; a cathode arranged on the AlGaN barrier layer; a groove arranged in the GaN channel layer and the AlGaN barrier layer, and an anode provided on a bottom and a side wall of the groove and part of the AlGaN barrier layer; a dielectric layer provided on an uncovered portion of the AlGaN barrier layer; wherein, a contact portion of the anode with the groove and the AlGaN barrier layer is W or Mo metal with a crystal orientation of .

公开(公告)号：US11538930B2

公开(公告)日：2022-12-27

申请号：US17201234

申请日：2021-03-15

申请人： Xidian University

发明人： Chunfu Zhang ,  Weihang Zhang ,  Jiaqi Zhang ,  Guofang Yang ,  Yichang Wu ,  Dazheng Chen ,  Jincheng Zhang ,  Yue Hao

IPC分类号： H01L29/778 ,  H01L27/06 ,  H01L27/088 ,  H01L29/66

摘要： A bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor, which mainly solves a problem that the existing monolithic heterogeneous integrated Cascode-structure field effect transistor has no reverse blocking characteristic. The field effect transistor includes a substrate, a GaN buffer layer, an AlGaN barrier layer and a SiN isolation layer, wherein an isolation groove is etched in the middle of the SiN isolation layer, a Si active layer is printed on the SiN isolation layer on one side of the isolation groove so as to prepare a Si metal oxide semiconductor field effect transistor, and a GaN high-electron-mobility transistor is prepared on the other side of the isolation groove, and a drain electrode of the GaN high-electron-mobility transistor is in Schottky contact with the AlGaN barrier layer to form a bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor.

公开(公告)号：US11031240B2

公开(公告)日：2021-06-08

申请号：US16083255

申请日：2016-09-28

申请人： XIDIAN UNIVERSITY

发明人： Jincheng Zhang ,  Jing Ning ,  Dong Wang ,  Zhibin Chen ,  Zhiyu Lin ,  Yue Hao

IPC分类号： H01L21/02 ,  C23C14/35 ,  H01L29/20 ,  C30B25/18 ,  C30B29/40 ,  C23C14/06 ,  C23C16/30 ,  C23C16/02

摘要： The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively. The gallium nitrate thin film according to an embodiment comprises the following structures in order from bottom to top: a substrate (1), a graphene layer (2), an aluminum nitride nucleation layer (3) fabricated by using a magnetron sputtering method, an aluminum nitride transition layer (4) grown by MOCVD, and a first and a second gallium nitrate layer (5, 6) having different V-III ratios.

公开(公告)号：US20210359121A1

公开(公告)日：2021-11-18

申请号：US17355644

申请日：2021-06-23

申请人： Xidian University

发明人： Xuefeng Zheng ,  Xiaohua Ma ,  Zhenling Tang ,  Peijun Ma ,  Ming Du ,  Minhan Mi ,  Yunlong He ,  Yang Lu ,  Xiaohu Wang ,  Chong Wang ,  Yue Hao

IPC分类号： H01L29/778 ,  H01L29/20

摘要： A high electron mobility transistor (HEMT) device is provided. The HEMT device includes a substrate layer, a buffer layer, a barrier layer, and a metallic electrode layer sequentially arranged in that order from bottom to top. The metallic electrode layer includes a source electrode, a gate electrode and a drain electrode sequentially arranged in that order from left to right. The barrier layer may include m number of fluorine-doped regions arranged in sequence, where m is a positive integer and m≥2. The HEMT device can realize a relative stability of transconductance in a large range of a gate-source-bias through mutual compensation of transconductances in the fluorine-doped regions with different fluorine-ion concentrations of the barrier layer under the gate electrode, and the HEMT device has a good linearity without the need of excessive adjustments of material structure and device.

公开(公告)号：US11133185B2

公开(公告)日：2021-09-28

申请号：US16905147

申请日：2020-06-18

申请人： XIDIAN UNIVERSITY

发明人： Jing Ning ,  Jincheng Zhang ,  Dong Wang ,  Yanqing Jia ,  Chaochao Yan ,  Boyu Wang ,  Peijun Ma ,  Yue Hao

IPC分类号： H01L21/02

摘要： The present invention discloses an epitaxial lift-off process of graphene-based gallium nitride (GaN), and principally solves the existing problems about complex lift-off technique, high cost, and poor quality of lift-off GaN films. The invention is achieved by: first, growing graphene on a well-polished copper foil by CVD method; then, transferring a plurality of layers of graphene onto a sapphire substrate; next, growing GaN epitaxial layer on the sapphire substrate with a plurality of graphene layers transferred by the metal organic chemical vapor deposition (MOCVD) method; finally, lifting off and transferring the GaN epitaxial layer onto a target substrate with a thermal release tape. With graphene, the present invention relieves the stress generated by the lattice mismatch between substrate and epitaxial layer; moreover, the present invention readily lifts off and transfers the epitaxial layer to the target substrate by means of weak Van der Waals forces between epitaxial layer and graphene.

公开(公告)号：US20190108999A1

公开(公告)日：2019-04-11

申请号：US16083255

申请日：2016-09-28

申请人： XIDIAN UNIVERSITY

发明人： Jincheng Zhang ,  Jing Ning ,  Dong Wang ,  Zhibin Chen ,  Zhiyu Lin ,  Yue Hao

IPC分类号： H01L21/02 ,  H01L29/20 ,  C30B25/18 ,  C30B29/40 ,  C23C14/06 ,  C23C16/30 ,  C23C16/02 ,  C23C14/35

摘要： The present invention discloses a method for growing gallium nitride based on graphene and magnetron sputtered aluminum nitride, and a gallium nitride thin film. The method according to an embodiment comprises: spreading graphene over a substrate; magnetron sputtering an aluminum nitrite onto the graphene-coated substrate to obtain a substrate sputtered with aluminum nitrite; placing the substrate sputtered with aluminum nitride into a MOCVD reaction chamber and heat treating the substrate to obtain a heat treated substrate; growing an aluminum nitride transition layer on the heat treated substrate and a first and a second gallium nitride layer having different V-III ratios, respectively. The gallium nitrate thin film according to an embodiment comprises the following structures in order from bottom to top: a substrate (1), a graphene layer (2), an aluminum nitride nucleation layer (3) fabricated by using a magnetron sputtering method, an aluminum nitride transition layer (4) grown by MOCVD, and a first and a second gallium nitrate layer (5, 6) having different V-III ratios.