公开(公告)号：US20210359121A1

公开(公告)日：2021-11-18

申请号：US17355644

申请日：2021-06-23

申请人： Xidian University

发明人： Xuefeng Zheng ,  Xiaohua Ma ,  Zhenling Tang ,  Peijun Ma ,  Ming Du ,  Minhan Mi ,  Yunlong He ,  Yang Lu ,  Xiaohu Wang ,  Chong Wang ,  Yue Hao

IPC分类号： H01L29/778 ,  H01L29/20

摘要： A high electron mobility transistor (HEMT) device is provided. The HEMT device includes a substrate layer, a buffer layer, a barrier layer, and a metallic electrode layer sequentially arranged in that order from bottom to top. The metallic electrode layer includes a source electrode, a gate electrode and a drain electrode sequentially arranged in that order from left to right. The barrier layer may include m number of fluorine-doped regions arranged in sequence, where m is a positive integer and m≥2. The HEMT device can realize a relative stability of transconductance in a large range of a gate-source-bias through mutual compensation of transconductances in the fluorine-doped regions with different fluorine-ion concentrations of the barrier layer under the gate electrode, and the HEMT device has a good linearity without the need of excessive adjustments of material structure and device.